Contextual Info: International H»HRectifier P D -9 .9 3 0 IRGIH50F INSULATED GATE BIPOLAR TRANSISTOR Fast-Speed IGBT • • • • • • Hermetically sealed Isolated Latch-proof Simple gate drive High operating frequency Switching-loss rating includes all “tail” losses

Contextual Info: S^E 405 5 4 5 2 GG13373 SOM » International S R ectifier I INR SERIES IRK.170, .230, .250 SCR I SCR and SCR / DIODE NEW MAGN-A-pak Power Modules INTERNATIONAL R E CT IF IE R Features • High voltage. ■ Electrically isolated base plate ■ 3 000 V RMS isolating voltage

Contextual Info: PD-9.1209 International J3R R ectifier IRFI740GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm

Contextual Info: International ja g Rectifier HEXFET Power MOSFET • • • • • • 4 fl5 5 4 S 2 PD-9.457C INR QD1SS2L 334 IRFP440 INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

TRANSISTOR C483

Abstract: IRGPH50MD2
Contextual Info: International S Rectifier PD - 9.1047A IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces — 1200V Short circuit rated -1 0 j s @125°C, VGe= 15V Switching-loss rating includes all "tail" losses

Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

irkv 300

Abstract: d337 diode current source inverter D345 irkt 350 IRKH 180 base triggering circuit of 3 phase inverters
Contextual Info: S IE 4Ô5SMS2 D 0Ü13373 International S Rectifier I INR SERIES IRK.170, .230, .250 SCR / SCR and SCR / DIODE INTERNATIONAL 504 NEW MAGN-A-pak Power Modules R EC TIFIER Features • ■ ■ ■ ■ ■ ■ ■ ■ High v o lta g e . E le c tric a lly is o la te d ba se p la te

Contextual Info: International S ] Rectifier HEXFET® Power MOSFET • • • • • • 4A55452 □014StlS 115 « I N R PD-9.593B IRC840 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

ST 9918

Abstract: M6SS
Contextual Info: International :eVr Rectifier 4Ô55M52 0014072 07T * I N R HEXFET Power M O S F E T INTERNATIONAL • • • • • • • PD-9.918 IR F9610 S RECTIFIER Surface Mount Available in Tape & Reel Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling

Contextual Info: P D - 9 .1 7 2 0 International IQ R Rectifier IR F 1 0 1 0 E S /L HEXFET^ Power MOSFET Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 6 0 V

C818

Abstract: st c817 C817 st c816 C814 irgti050u06 c816
Contextual Info: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"

irfbg30

Abstract: 001S00
Contextual Info: HÔ5 5H52 International k Rectifier 2 b? • INR PD-9.620A IRFBG30 HEXFET® Power M O S F E T • • • • • aDm=n0 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: PD -9.1582A International l R Rectifier IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsC=10ps, @360V VCE start , T j= 1 2 5 °C ,

62320 rectifier

Abstract: E62320 26mt120a 26MT80A 36MT120A 36MT60A 26MT40A 26MT140A 26MT60A 36MT80A
Contextual Info: • International [ T O R Rectifier 4A5SMS2 QDlhMIB TSS ■ INR INTERNATIONAL RECTIFIER bSE s e r ie s m t-a THREE PHASE BRIDGE Power Modules 25A 35A Features ■ Universal, 3 way terminals: push-on, wrap around or solder ■ High thermal conductivity package,

DIODE C817

Abstract: IRGTI050U06 C813 C818 C817 DIODE C813
Contextual Info: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"

IRGNI140U06

Contextual Info: International Ili»«]Rectifier PM972B IRGNI140U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT High Side Switch ;- ° 3 V CE = 6 0 0 V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 10OKHz resonant