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    IRFBG30 Search Results

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    IRFBG30 Price and Stock

    Vishay Siliconix IRFBG30PBF

    MOSFET N-CH 1000V 3.1A TO220AB
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    DigiKey IRFBG30PBF Tube 4,064 1
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    RS IRFBG30PBF Bulk 1,000
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    Quest Components IRFBG30PBF 764
    • 1 $1.35
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    • 1000 $0.675
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    New Advantage Corporation IRFBG30PBF 284,900 1
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    • 1000 $1.23
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    Vishay Siliconix IRFBG30PBF-BE3

    MOSFET N-CH 1000V 3.1A TO220AB
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    DigiKey IRFBG30PBF-BE3 Tube 1,362 1
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    New Advantage Corporation IRFBG30PBF-BE3 1,000 1
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    • 1000 $0.8558
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    Vishay Siliconix IRFBG30

    MOSFET N-CH 1000V 3.1A TO220AB
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    ComSIT USA IRFBG30 277
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    Vishay Intertechnologies IRFBG30PBF

    MOSFET N-CHANNEL 1000V - Bulk (Alt: IRFBG30PBF)
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    Avnet Americas IRFBG30PBF Bulk 26,625 12 Weeks 1,000
    • 1 $1.11
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    IRFBG30PBF Bulk 17 Weeks, 3 Days 1
    • 1 $2.37
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    • 100 $1.59
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    Mouser Electronics IRFBG30PBF 3,256
    • 1 $2.43
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    Newark IRFBG30PBF Bulk 694 1
    • 1 $1.62
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    RS IRFBG30PBF Bulk 780 1
    • 1 $2.48
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    Bristol Electronics IRFBG30PBF 680
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    Quest Components IRFBG30PBF 800
    • 1 $4.47
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    • 100 $2.7565
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    TTI IRFBG30PBF Tube 3,950 50
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    TME IRFBG30PBF 1,047 1
    • 1 $2.37
    • 10 $1.21
    • 100 $1.05
    • 1000 $0.87
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    Avnet Asia IRFBG30PBF 15 Weeks 1,000
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    EBV Elektronik IRFBG30PBF 2,200 13 Weeks 50
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    Vishay Intertechnologies IRFBG30PBF-BE3

    MOSFET N-CHANNEL 1000V - Bulk (Alt: 78AH6356)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRFBG30PBF-BE3 Bulk 17 Weeks, 4 Days 1
    • 1 $2.15
    • 10 $1.5
    • 100 $1.34
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    IRFBG30PBF-BE3 Tube 12 Weeks 1,000
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    Mouser Electronics IRFBG30PBF-BE3 9,338
    • 1 $2.4
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    • 100 $1.3
    • 1000 $0.972
    • 10000 $0.925
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    Newark IRFBG30PBF-BE3 Bulk 729 1
    • 1 $1.05
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    TTI IRFBG30PBF-BE3 Tube 27,900 50
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    • 100 $1.27
    • 1000 $1.01
    • 10000 $0.99
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    EBV Elektronik IRFBG30PBF-BE3 13 Weeks 50
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    IRFBG30 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFBG30 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFBG30 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 3.1A TO-220AB Original PDF
    IRFBG30 International Rectifier TO-220 Plastic Package HEXFETs Scan PDF
    IRFBG30 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRFBG30 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFBG30 International Rectifier Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A) Scan PDF
    IRFBG30 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 1000V, 3.1A, Pkg Style TO-220AB Scan PDF
    IRFBG30 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFBG30 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFBG30PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 3.1A TO-220AB Original PDF
    IRFBG30PBF International Rectifier 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Scan PDF

    IRFBG30 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFBG30

    Abstract: SiHFBG30 SiHFBG30-E3
    Text: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


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    IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBG30 SiHFBG30-E3 PDF

    IRFBG30

    Abstract: No abstract text available
    Text: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


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    IRFBG30, SiHFBG30 2002/95/EC O-220AB 11-Mar-11 IRFBG30 PDF

    IRFBG30

    Abstract: No abstract text available
    Text: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


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    IRFBG30, SiHFBG30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFBG30 PDF

    IRFBG30

    Abstract: No abstract text available
    Text: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


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    IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A IRFBG30 PDF

    IRFBG30

    Abstract: No abstract text available
    Text: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


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    IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A IRFBG30 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFBG30 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1000 V(BR)GSS (V) I(D) Max. (A)3.1 I(DM) Max. (A) Pulsed I(D)2.0 @Temp (øC)100# IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ


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    IRFBG30 PDF

    IRFBG30

    Abstract: No abstract text available
    Text: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


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    IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A IRFBG30 PDF

    IRFBG30PBF

    Abstract: No abstract text available
    Text: PD - 94989 IRFBG30PbF • Lead-Free 1 IRFBG30PbF 2 IRFBG30PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)


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    IRFBG30PbF O-220AB O-220AB. IRFBG30PBF PDF

    IRFBG30

    Abstract: No abstract text available
    Text: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


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    IRFBG30, SiHFBG30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFBG30 PDF

    IRFBG30PBF

    Abstract: No abstract text available
    Text: PD - 94989 IRFBG30PbF • Lead-Free Document Number: 91124 2/9/04 www.vishay.com 1 IRFBG30PbF Document Number: 91124 www.vishay.com 2 IRFBG30PbF Document Number: 91124 www.vishay.com 3 IRFBG30PbF Document Number: 91124 www.vishay.com 4 IRFBG30PbF Document Number: 91124


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    IRFBG30PbF O-220AB 12-Mar-07 IRFBG30PBF PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBG30 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


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    O-220AB IRFBG30 PDF

    AN609

    Abstract: IRFBG30 SiHFBG30
    Text: IRFBG30_RC, SiHFBG30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    IRFBG30 SiHFBG30 AN609, 20-Apr-10 AN609 PDF

    IRFBG30PBF

    Abstract: No abstract text available
    Text: PD - 94989 IRFBG30PbF • Lead-Free Document Number: 91124 2/9/04 www.vishay.com 1 IRFBG30PbF Document Number: 91124 www.vishay.com 2 IRFBG30PbF Document Number: 91124 www.vishay.com 3 IRFBG30PbF Document Number: 91124 www.vishay.com 4 IRFBG30PbF Document Number: 91124


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    IRFBG30PbF O-220AB 08-Mar-07 IRFBG30PBF PDF

    IRFBG30

    Abstract: IRFBG30PBF SiHFBG30-E3 81145 RD-170 SiHFBG30
    Text: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) Configuration


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    IRFBG30, SiHFBG30 O-220 O-220 18-Jul-08 IRFBG30 IRFBG30PBF SiHFBG30-E3 81145 RD-170 PDF

    IRFBG30PBF

    Abstract: No abstract text available
    Text: PD - 94989 IRFBG30PbF • Lead-Free www.irf.com 1 2/9/04 IRFBG30PbF 2 www.irf.com IRFBG30PbF www.irf.com 3 IRFBG30PbF 4 www.irf.com IRFBG30PbF www.irf.com 5 IRFBG30PbF 6 www.irf.com IRFBG30PbF TO-220AB Package Outline Dimensions are shown in millimeters inches


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    IRFBG30PbF O-220AB O-220AB. IRFBG30PBF PDF

    irfbg30

    Abstract: No abstract text available
    Text: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) Configuration


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    IRFBG30, SiHFBG30 O-220 O-220 12-Mar-07 irfbg30 PDF

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


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    PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


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    IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET PDF

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


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    OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 PDF

    IRF470

    Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
    Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0


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    IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    irfbg30

    Abstract: 001S00
    Text: HÔ5 5H52 International k Rectifier 2 b? • INR PD-9.620A IRFBG30 HEXFET® Power M O S F E T • • • • • aDm=n0 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan
    IRFBG30 O-220 S5452 0G15QD3 irfbg30 001S00 PDF

    IRFBG30

    Abstract: ior 481 mosfet PD962 IBC30 9620a 9620* diode
    Text: PD-9.620A International S Rectifier IRFBG30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1000V R DS on = 5 -0 ß lD = 3.1 A Description DATA SHEETS


    OCR Scan
    IRFBG30 O-220 IRFBG30 ior 481 mosfet PD962 IBC30 9620a 9620* diode PDF