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    NDB5060 Search Results

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    NDB5060 Price and Stock

    onsemi NDB5060L

    MOSFET N-CH 60V 26A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDB5060L Digi-Reel 1,257 1
    • 1 $2.85
    • 10 $1.953
    • 100 $2.85
    • 1000 $2.85
    • 10000 $2.85
    		Buy Now
    NDB5060L Cut Tape 1,257 1
    • 1 $2.85
    • 10 $1.953
    • 100 $2.85
    • 1000 $2.85
    • 10000 $2.85
    		Buy Now
    NDB5060L Reel 800 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.14563
    • 10000 $1.14563
    		Buy Now
    Avnet Americas NDB5060L Reel 22 Weeks 1,600
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.0859
    		Buy Now
    Mouser Electronics NDB5060L 1,522
    • 1 $2.73
    • 10 $1.96
    • 100 $1.42
    • 1000 $1.14
    • 10000 $1.14
    		Buy Now
    Newark NDB5060L Reel 800
    • 1 $1.54
    • 10 $1.54
    • 100 $1.54
    • 1000 $1.54
    • 10000 $1.38
    		Buy Now
    NDB5060L Cut Tape 1
    • 1 $2.84
    • 10 $2.26
    • 100 $1.7
    • 1000 $1.38
    • 10000 $1.23
    		Buy Now
    Onlinecomponents.com NDB5060L
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.31
    • 10000 $1.12
    		Buy Now
    Rochester Electronics NDB5060L 4,000 1
    • 1 $1.27
    • 10 $1.27
    • 100 $1.19
    • 1000 $1.08
    • 10000 $1.08
    		Buy Now
    Richardson RFPD NDB5060L 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.15
    • 10000 $1.15
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    Avnet Silica NDB5060L 23 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    EBV Elektronik NDB5060L 24 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    SMC Corporation of America C96NDB50-60C

    CYLINDER WITH LOCK, TIE ROD, C96 SERIES | SMC Corporation C96NDB50-60C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS C96NDB50-60C Bulk 5 Weeks 1
    • 1 $444.48
    • 10 $444.48
    • 100 $444.48
    • 1000 $444.48
    • 10000 $444.48
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    SMC Corporation of America C95NDB50-60-D

    CYLINDER, TIE ROD, AIR, C95 SERIES | SMC Corporation C95NDB50-60-D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS C95NDB50-60-D Bulk 5 Weeks 1
    • 1 $626.69
    • 10 $626.69
    • 100 $626.69
    • 1000 $626.69
    • 10000 $626.69
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    SMC Corporation of America C96NDB50-600C

    CYLINDER WITH LOCK, TIE ROD, C96 SERIES | SMC Corporation C96NDB50-600C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS C96NDB50-600C Bulk 5 Weeks 1
    • 1 $536.05
    • 10 $536.05
    • 100 $536.05
    • 1000 $536.05
    • 10000 $536.05
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    SMC Corporation of America C95NDB50-600-D

    CYLINDER, TIE ROD, AIR, C95 SERIES | SMC Corporation C95NDB50-600-D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS C95NDB50-600-D Bulk 5 Weeks 1
    • 1 $751.89
    • 10 $751.89
    • 100 $751.89
    • 1000 $751.89
    • 10000 $751.89
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    Find more NDB5060 price and stock on Findchips.com

    NDB5060 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDB5060 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDB5060 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDB5060 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDB5060L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB5060L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    NDB5060L National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF

    NDB5060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    v 250 c 45

    Abstract: NDB5060 NDP5060 0V24V
    Text: N October 1996 NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 26 A, 60 V. RDS ON = 0.05 Ω @ VGS= 10 V. These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell


    Original     		PDF NDP5060 NDB5060 v 250 c 45 NDB5060 0V24V

    MJ-26

    Abstract: NDB5060L NDP5060L V4580
    Text: N October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP5060L NDB5060L MJ-26 NDB5060L V4580

    zener diode 3.0 b2

    Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB5060L NDP4060L NDP5060L
    Text: October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP5060L NDB5060L zener diode 3.0 b2 m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB5060L NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB5060 NDP4060L NDP5060
    Text: October 1996 NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 26 A, 60 V. RDS ON = 0.05 Ω @ VGS= 10 V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    Original     		PDF NDP5060 NDB5060 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB5060 NDP4060L

    Untitled

    Abstract: No abstract text available
    Text: October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP5060L NDB5060L

    zener diode 3.0 b2

    Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB5060 NDP4060L NDP5060
    Text: October 1996 NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features 26 A, 60 V. RDS ON = 0.05 Ω @ VGS= 10 V. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    Original     		PDF NDP5060 NDB5060 zener diode 3.0 b2 m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB5060 NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB5060L NDP4060L NDP5060L
    Text: October 1996 NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP5060L NDB5060L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB5060L NDP4060L

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532

    MC0628R

    Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
    Text: Discontinued Product s 4296_ST42091 5092_F50188E 5FS1_NB5F009 73282 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW 74ACT151SJ 74ACT16646SSC 74ACTQ08SJX Replacement Product(s) NONE NONE FDS3580 None 74ABT646ADB 74ABT646ADB


    Original     		PDF ST42091 F50188E NB5F009 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW MC0628R mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884

    MC0628R

    Abstract: 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE
    Text: R E L I A B L E . L O G I C . I N N O V A T I O N . Logic Cross-Reference Logic Cross-Reference 2003 Texas Instruments Printed in the U.S.A. by Texoma Business Forms, Durant, Oklahoma Printed on recycled paper. SCYB017A NEW First Revision Logic Cross-Reference


    Original     		PDF SCYB017A T74ALVC32374 74CBTLV16211 SN74CBTD16211 SN74SSTV16859 SN74CBTLV16211GRDR SN74ALVC16245AGRDR -SN74SSTV16859GKER MC0628R 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE

    5060L

    Abstract: transistor FS 22 SM 10 LD26
    Text: O ctober 1996 N NDP5060L/ NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		PDF NDP5060L/ NDB5060L 5060L transistor FS 22 SM 10 LD26

    NDB5060L

    Abstract: NDP5060L
    Text: O ctober 1 996 N NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T h e s e logic level N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field effect transistors a re produced using N ational's proprietary,


    OCR Scan     		PDF NDP5060L NDB5060L NDB5060L

    Untitled

    Abstract: No abstract text available
    Text: October 1996 N NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		PDF NDP5060 NDB5060

    NDB5060

    Abstract: NDP5060
    Text: O ctober 1 996 N NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor G eneral D escription These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		PDF NDP5060 NDB5060 NDB5060

    NDP5060L

    Abstract: No abstract text available
    Text: October 1996 N NDP5060L / NDB5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		PDF NDP5060L NDB5060L