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    NE202 Price and Stock

    Panasonic Electronic Components ANE2020

    IMAGING CAMERA CHASSIS MOUNT
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    DigiKey ANE2020 Box
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    California Eastern Laboratories (CEL) NE202930-A

    RF TRANS NPN 6V 11GHZ 3SMINMOLD
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    DigiKey NE202930-A Bag
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    Ametherm Inc PANE202395

    Industrial Temperature Sensors 2Kohm B-3950 BEAD PROBE
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    Mouser Electronics PANE202395
    • 1 $2.48
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    • 100 $1.4
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    Microchip Technology Inc DSC1121NE2-020.0000

    MEMS OSC, LVCMOS, 20MHz, 25PPM, 2.5-3.3V, -20 to 70C, 7.0 x 5.0mm, Projected EOL: 2049-09-08
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    Microchip Technology Inc DSC1121NE2-020.0000 5,000
    • 1 $1.07
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    • 100 $0.81
    • 1000 $0.78
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    Microchip Technology Inc DSC1121NE2-020.0000T

    MEMS OSC, LVCMOS, 20MHz, 25PPM, 2.5-3.3V, -20 to 70C, 7.0 x 5.0mm, Projected EOL: 2049-09-08
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Microchip Technology Inc DSC1121NE2-020.0000T 5,000
    • 1 $1.07
    • 10 $1.07
    • 100 $0.81
    • 1000 $0.78
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    NE202 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE202 NEC ULTRA LOW NOISE K BAND HETERO JUNCTION FET Scan PDF
    NE20200 NEC Ultra Low Noise K-Band Hetero Junction FET Scan PDF
    NE20200 NEC 12 GHz, , ultra low noise K-band hetero junction FET Scan PDF
    NE20200-1.4 NEC Ultra Low Noise K-Band Hetero Junction FET Scan PDF
    NE20200-1.4 NEC 12 GHz, , ultra low noise K-band hetero junction FET Scan PDF
    NE20248 Unknown FET Data Book Scan PDF
    NE20248 NEC Ultra Low Noise K-Band Hetero Junction FET Scan PDF
    NE20248 NEC 18 GHz, , ultra low noise K-band hetero junction FET Scan PDF
    NE20283A NEC Ultra Low Noise K-Band Hetero Junction FET Scan PDF
    NE20283A NEC 12 GHz, , ultra low noise K-band hetero junction FET Scan PDF
    NE20283A1.4 NEC Ultra Low Noise K-Band Hetero Junction FET Scan PDF
    NE20283A-1.4 NEC 12 GHz, , ultra low noise K-band hetero junction FET Scan PDF
    NE202930-A Renesas Electronics RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN EPITAXIAL HF 3SMINI Original PDF
    NE202930-T1-A Renesas Electronics RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN EPITAXIAL HF 3SMINI Original PDF
    NE202XX NEC ULTRA LOW NOISE K BAND HETERO JUNCTION FET Scan PDF
    NE202XX-1.4 NEC ULTRA LOW NOISE K BAND HETERO JUNCTION FET Scan PDF

    NE202 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary Data Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 FEATURES • • • • High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification


    Original     		PDF NE202930 R09DS0003EJ0100 NE202930-T1 NE202930-T1-A R09DS0003EJ0100 NE202930

    Untitled

    Abstract: No abstract text available
    Text: NE20283A1.4 Transistors N-Channel UHF/Microwave JFET V BR DSS (V)4.0 V(BR)GSS (V) I(D) Max. (A)60m P(D) Max. (W)200m Maximum Operating Temp (øC)175õ I(DSS) Min. (A) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.


    Original     		PDF NE20283A1

    Untitled

    Abstract: No abstract text available
    Text: NE20283A Transistors N-Channel UHF/Microwave JFET V BR DSS (V)4.0 V(BR)GSS (V) I(D) Max. (A)60m P(D) Max. (W)200m Maximum Operating Temp (øC)175õ I(DSS) Min. (A) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.


    Original     		PDF NE20283A

    NE202930

    Abstract: No abstract text available
    Text: PreliminaryData Sheet NE202930 Silicon NPN Epitaxial High Frequency Transistor R09DS0003EJ0100 Rev.1.00 Jul 14, 2010 FEATURES • • • • High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification Suitable for equipments of low collector voltage Less than 5 V


    Original     		PDF NE202930 R09DS0003EJ0100 NE202930-T1 NE202930-T1-A NE202930

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original     		PDF

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    1400

    Abstract: NE202 circuit NE202 NE20200 NE20248 NE20283A NE202XX W2603
    Text: NEC/ CALIFORNIA 1SE D bM2741M OGOIS^G T-31-¿S' 5 - N E i* i» ULTRA LOW NOISE K-BAND HETERO JUNCTION FET FEATURES NE202 SERIES OUTLINE DIMENSIONS • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4)


    OCR Scan     		PDF bM2741M NE202 NE202XX) NE202XX-1 NE20248) NE20283A) 1400 NE202 circuit NE20200 NE20248 NE20283A NE202XX W2603

    NE202 circuit

    Abstract: NE202 NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574
    Text: L NEC N E C / 1SE D CALIFORNIA • b427414 OQOISÌO T'3l -¿S' S ULTRA LOW NOISE K-BAND HETERO JUNCTION FET NE202 SERIES OUTLINE DIMENSIONS FEATURES • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4) 1.8 dB TYP at f = 18 GHz (NE20248)


    OCR Scan     		PDF b427414 NE202 NE202XX) NE202XX-1 NE20248) NE20283A) NE202 circuit NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574

    NE32184A

    Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
    Text: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B


    OCR Scan     		PDF NE345L-10B NE345L-20B NE20248 NE24200 NE24283A NE32084 4/12GBz NE76038 4/12GHz NE76184A NE32184A Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A

    NE202

    Abstract: NE20300 NE20383A
    Text: E C/ C A L I F O R N I A NEC 1SE D b4E7414 ODOISTT 1 NE20300 NE20383A ULTRA LOW NOISE Ku-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES • L O W N O IS E F IG U R E 1.25 d B T Y P at f = 12 G H z NE20300 CHIP (Units in pm) • H IG H A S S O C IA T E D GAIN


    OCR Scan     		PDF b4E7414 NE20300 NE20383A NE203 NE202, NE202 NE20383A