1400
Abstract: NE202 circuit NE202 NE20200 NE20248 NE20283A NE202XX W2603
Text: NEC/ CALIFORNIA 1SE D bM2741M OGOIS^G T-31-¿S' 5 - N E i* i» ULTRA LOW NOISE K-BAND HETERO JUNCTION FET FEATURES NE202 SERIES OUTLINE DIMENSIONS • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4)
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bM2741M
NE202
NE202XX)
NE202XX-1
NE20248)
NE20283A)
1400
NE202 circuit
NE20200
NE20248
NE20283A
NE202XX
W2603
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al 232 nec
Abstract: NE64400 NE644 NE64408 S21E
Text: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors
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b427414
NE64400
NE64408
NE644
gain60
al 232 nec
NE64408
S21E
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1SS105
Abstract: 1SS105A 1SS11 1SS11-3G diode 5f ND5051-3G ND5052-3G ND5111-3G 1SS105A3G 3g marking
Text: N E C / C A L IF O R N I A 1=427414 G D D n i O 1SE D NEC T-cî-ùl A G aA s EPITAXIAL SCH O TTKY B A R R IE R DIO DE ND5000 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • LOW C O N V E R SIO N L O S S The ND5000, GaAs Epitaxial Schottky Barriercliodes, offer low
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14E7414
ND5000
ND5000,
ND5111,
ND5112,
ND5113
ND5112
ND5111
1SS105
1SS105A
1SS11
1SS11-3G
diode 5f
ND5051-3G
ND5052-3G
ND5111-3G
1SS105A3G
3g marking
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2SC2150
Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Text: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use
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bM27M14
QQQE40b
NE57800
NE57807
NE57835
NE57800
NE578
2SC2150
NE57835
NE578 nec
2SC215
NE AND micro-X
transistor NEC ka 42
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PC1675G
Abstract: 1675P
Text: 103 b4E7414 G002b4b 5 bE D E C/ CALIFORNIA NEC UPC1675B UPC1675G UPC1675P 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER OUTLINE D IM ENSIO N S FEA TU RES Units in mm O UTLINE 39 (SOT-143) • W ID E BA N D W ID T H : 1900 MHz T Y P at 3 d B Point for UPC1675G
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b4E7414
G002b4b
UPC1675B
UPC1675G
UPC1675P
OT-143)
UPC1675B,
UPC1675
PC1675G
1675P
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81E TRANSISTOR
Abstract: 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475 NEM080481-12 NEM081081-12
Text: NEC/ CALIFORNIA NEC SbE ]> • b4B7414 0002552 22b — CLASS C, 800-960 MHz, 12 VOLT POWER TRANSISTOR INECC \ ' Z Z -I s NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE: 13.5 V NEC’s NEM0800 series of NPN epitaxial UHF power
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b427414
0002SS2
NEM080481-12
NEM081081-12
NEM082081B-12
NEM084081B-12
NEM0800
NEM080481E-12
NEM081081E-12
81E TRANSISTOR
2SC3282
2SC3282A
NEC J 302
2SC3283A
2SC3283
J349
J475
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NE050214-12
Abstract: 2SC2672 bM27414
Text: N E C / SbE CALIFORNIA NEC bM5?mM D 00G2S37 TIT BINECC - T '^ 3 - 0 5 CLASS C, 500 MHz, 12 VOLT POWER TRANSISTOR NE050214-12 FEATURES ABSOLUTE MAXIMUM RATINGS Ta - 25°C • GOOD RF PERFORMANCE SYMBOLS PARAMETERS UNITS RATINGS • HIGH EFFICIENCY: 65% TYP.
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00G2S37
NE050214-12
NE050214-12
bM27414
0GG253Ã
2SC2672
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