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    NE21800 Search Results

    NE21800 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE21800 NEC 60 GHz, low noise X-band GaAs MESFET Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: NE21800 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)5.0 V(BR)GSS (V) I(D) Max. (A)120m P(D) Max. (W)500m Maximum Operating Temp (øC)175õ I(DSS) Min. (A) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.


    Original     		PDF NE21800

    2SK281

    Abstract: 203l2 NE218 NE21889 NE21800
    Text: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure


    OCR Scan     		PDF Lj457414 NE21800 NE21889 NE218 NE21800) 2SK281 203l2 NE21889

    2SK281

    Abstract: sl2109
    Text: N E C / 15E D CALIFORNIA SEC • b427414 QOOlblS 0 T - 3 t- 2 C LOW NOISE X-BAND GaAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V ER Y H IG H fmax: 60 GHz The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure


    OCR Scan     		PDF b427414 NE21800 NE21889 NE218 NE21800) NE21889) 2SK281 sl2109