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    2SK281 Search Results

    2SK281 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK281 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK281 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK281 Unknown FET Data Book Scan PDF
    2SK2816 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK2816 Shindengen Electric Power MOS FET Scan PDF
    2SK2817 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK2817 Shindengen Electric Power MOS FET Scan PDF
    2SK2818 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK2818 Shindengen Electric Power MOS FET Scan PDF
    2SK2819 Shindengen Electric Power MOSFET Selection Guide Original PDF
    2SK2819 Shindengen Electric Power MOS FET Scan PDF

    2SK281 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK245

    Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H


    Original     		PDF 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK245 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4

    SMD 743

    Abstract: STO-220 2sk2333 FTO-220 2SJ489 2SK2820 F9H4N F7H3P 2SK2816 2SK2821
    Text: POWER MOSFET 20V MOSFET series SOP-8 N-Channel, Enhancement type Absolute Maximum Ratings Electrical Characteristics Tch VDSS VGSS ID PT [˚C] [V] [V] [A] [W] [Ω] ±12 7 5 2 2 0.029 0.047 Type No. F7H2N 150 F5H2ND D: Dual, without D is Single 20 RDS ON


    Original     		PDF FTO-220 O-220 STO-220 SMD 743 STO-220 2sk2333 FTO-220 2SJ489 2SK2820 F9H4N F7H3P 2SK2816 2SK2821

    NE800296

    Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application

    tea 1601 t

    Abstract: tea1601 TEA1601 PHILIPS tea 1601 C2026 K C2026 Y transistor C2026 2SK2810 J10MM AN00013
    Text: APPLICATION NOTE 26kV/30W High Voltage Generator with TEA1601 Resonic controller AN00013 Philips Semiconductors Philips Semiconductors O:; ,-+, :308%+ +)2)6%836 ;-8, 8)% 6)732-' '3286300)6 Application Note AN00013 Abstract 8LMW VITSVX HIWGVMFIW E ,MKL :SPXEKI +IRIVEXSV ; VIWSRERX 7147 JSV QSRMXSV ERH XIPIZMWMSR ETTPMGEXMSR FEWIH YTSR XLI 8)%


    Original     		PDF 26kV/30W TEA1601 AN00013 tea 1601 t tea1601 TEA1601 PHILIPS tea 1601 C2026 K C2026 Y transistor C2026 2SK2810 J10MM AN00013

    2SK2816

    Abstract: Shindengen sh DDD2733 Shindengen Electric Mfg
    Text: 1 . A b s o lu t e M a x im u m R a t in g s Item Storaæe Temperature Channel Temoerature Drain-Source Voltage Gate-Sourse Voltage Drain Current DO (Peak Svmbo1 T «t.* T ch V nss V frSS I D I DP Condition Pulse width ^ 10 p. s Duty cvcle ^ 1/100 I c Source Current (DC)


    OCR Scan     		PDF 2SK2816 0D0274Q 2SK2816 00HI2741 Shindengen sh DDD2733 Shindengen Electric Mfg

    2SK2067

    Abstract: S20LCA20 d4la20 12014af S12KC40 S24LCA20 SRT-2W6H D1NL20 S10SC4 TRANSISTORS REPLACEMENT
    Text: List of Discontinued Parts T h e d is c o n tin u e d p a rts a re as fo llo w s . T h e c h a r a c te r is tic s and p e rfo rm a n c e o f re p la c e m e n t p a rts a re a lm o s t th e sam e, b u t th e y are n o t id e n tic a l in all re s p e c ts .


    OCR Scan     		PDF S1RBA80 D1NK20 D1NK20H D1NK40 D1NK40H S1K20 S1K20H S1K40 S1K40H S2K20 2SK2067 S20LCA20 d4la20 12014af S12KC40 S24LCA20 SRT-2W6H D1NL20 S10SC4 TRANSISTORS REPLACEMENT

    2SK2817

    Abstract: DDD2744 2SK2818 F10E3N GDD2742 t32 1-l shindengen m
    Text: i P o w er 1 . Absolute MOS FE T Specification Maximum Ratings Item Storage Temperature Channel Temperature Drain-Souree Voltale Gate-Sourse Voltage Drain Current CDC Peak) Svmbol T »t* T rh V DSS V fifiS I n I DP Condition Pulse width ^ 10 u s Duty cycle ^ 1/100


    OCR Scan     		PDF 2SK2817 00DE751 2SK2817 DDD2744 2SK2818 F10E3N GDD2742 t32 1-l shindengen m

    2SK281

    Abstract: 203l2 NE218 NE21889 NE21800
    Text: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure


    OCR Scan     		PDF Lj457414 NE21800 NE21889 NE218 NE21800) 2SK281 203l2 NE21889

    S20LCA20

    Abstract: D5LCA20 2SK2067 SRK-12ZB D8LCA20 D15LCA20 D5KC20R S24LCA20 D8LCA20R SRT-2W6H
    Text: List of Discontinued Parts The d iscontinued parts are as follow s. The characteristics and performance of replacem ent parts are alm ost the same, but they are not identical in all respects. Therefore, we ask you to study the details shown in the list carefully when using the parts.


    OCR Scan     		PDF S1RBA80 D1NK20 D1NK20H D1NK40 D1NK40H S1K20 S1K20H S1K40 S1K40H S2K20 S20LCA20 D5LCA20 2SK2067 SRK-12ZB D8LCA20 D15LCA20 D5KC20R S24LCA20 D8LCA20R SRT-2W6H

    2SK281

    Abstract: sl2109
    Text: N E C / 15E D CALIFORNIA SEC • b427414 QOOlblS 0 T - 3 t- 2 C LOW NOISE X-BAND GaAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V ER Y H IG H fmax: 60 GHz The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure


    OCR Scan     		PDF b427414 NE21800 NE21889 NE218 NE21800) NE21889) 2SK281 sl2109

    complementary MOSFET 2sk

    Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
    Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V


    OCR Scan     		PDF DC12V DC24V DC48V AC100V AC200V 0-60V) 2SJ487 2SK2816 2SJ488 2SJ489 complementary MOSFET 2sk transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    J490

    Abstract: 2sk2819 2SK2816
    Text: Power MOSFET 20V M O S F E T se rie s SOP-8 N -Channel, Enhancement type Type No. EIAJ Absolute Maximum Ratings Electrical Characteristics ton V dss V g ss Id Pt Crss toff Tch Vgs= 2 .5 V typ (typ) (typ) (typ) [•c] [V ] [V ] [A] [w] (max) [n] [p F ] [pF ]


    OCR Scan     		PDF

    2sk270

    Abstract: 2SJ96 2SK272 2SJ92 2SK260 2SK286 2SK247 2SK389 2SJ91 2SK261
    Text: - 40 - 41 - % m tí & Ta=25'C u Cis (typ) (p F) Crs (typ) (pF) Vg s (V) typ max dB dB Vd s (V) f (Hz) Re <Q) R d s (ON) (max) Vg s (V) (0) •£ <D f& fé '14 Id (A) m £ & yfu 5* & m n m 10 82B SDG 2SK24G 7. 5 5 105A SDG 2SK247 800 -5 10 1.12 15 4 28A GDS


    OCR Scan     		PDF 2SK246 2SK247 2SK258 2SK259W) 2SK278 45GHztyp 2SK279 15GHz 2SK280 10dBtyp 2sk270 2SJ96 2SK272 2SJ92 2SK260 2SK286 2SK389 2SJ91 2SK261

    2SK2818

    Abstract: TU95
    Text: Po w er 1 . Absolute MOS FET Spec i f i cat i on Maximum Ratings Item Storage Temperature Channel Temperature Drain-Source Voltage Gate-Sourse Voltage DC Drain Current (Peak) Symbo1 T st« Tch V oss V GSS I D I DP Condition Pulse width â 10 p. s Duty cycle ^ 1/100


    OCR Scan     		PDF 2SK2818 2SK2818 00D27L TU95

    96209

    Abstract: 2SK2819 F20E3N
    Text: Power MQS F E T Specification 1 . Absolute Maximum Ratings Symbo1 Item S to ra g e T em perature T stg Channel T Ch T em perature Cond i t i o n - R atings U nit 5 5 - 1 5 0 •c 1 5 0 D rain -S ource V oltage V oss 3 0 G ate- Sourse V oltage V GSS D rain C u rre n t


    OCR Scan     		PDF 2SK2819 Q00E771 96209 2SK2819 F20E3N