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NE67483B Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE67483B		California Eastern Laboratories	NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET		Original	PDF
NE67483B		NEC	L to Ku band low noise amplifier N-channel GaAs MESFET. Idss 20 to 120 mA.		Original	PDF

NE67483B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NE674 Abstract: NE67400 NE67483B 0840 057 0615 Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz	Original	NE67400 NE67483B NE674 24-Hour NE67400 NE67483B 0840 057 0615	PDF
NE674 Abstract: NE67483B NEC 3552 NE67400 NE67483 PACKAGE OUTLINE 83B Text: NE67400 NE67483B NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz	Original	NE67400 NE67483B NE674 24-Hour NE67483B NEC 3552 NE67400 NE67483 PACKAGE OUTLINE 83B	PDF
nec b1007 Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,	Original	NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G	PDF
TRANSISTOR D434 Abstract: d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313 Text: PRELIMINARY DATA SHEET GaAs MES FET NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 1.4 dB TYP. at f = 12 GHz x High associated gain Ga = 10 dB TYP. at f = 12 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm	Original	NE674 NE67400 NE67483B NE67483B] NE67400] TRANSISTOR D434 d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313	PDF
L to Ku Band Low Noise GaAs MESFET Abstract: No abstract text available Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B N0ISE FIGURE-a s s o c ia t e d - g a in vs. FREQUENCY	OCR Scan	NE67400 NE67483B NE674is L to Ku Band Low Noise GaAs MESFET	PDF
NE67483 Abstract: 1595S Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B NOISE FIGURE, ASSO CIATED GAIN • LOW NO ISE FIGURE: N F = 1.4 dB TYP a t f = at 1 2 G H z • HIG H A S S O C IA T E D GAIN: G a = 10 dB TYP at f = 12 GHz CQ •a u. • G ATE W ID TH : WG = 280 nm	OCR Scan	NE67400 NE67483B IS12I IS12I NE67400, NE67483B NE67400 NE67483 1595S	PDF
NE674 Abstract: NE67483 NE67483B Text: PRELIMINARY DATA SHEET_ M E C / G a A s / M E S f e t NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure N F = 1.4 dBTYP. a tf= 1 2 G H z • High associated gain G a = 1 0 dBTYP, a t f = 1 2 GHz • Gate width: Wg = 280 ¿¿m	OCR Scan	NE674 NE67400 NE67483B NE67483B] NE67400] NE674 NE67483	PDF
LORB Abstract: NE2720 NE334S01 Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18	OCR Scan	NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01	PDF
NEC Ga FET marking L Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima	OCR Scan	GET-30749, GET-30749 NE29200 NE674 uPG501B uPG501P uPG503B uPG503P uPG506B NEC Ga FET marking L tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a	PDF