NE686 Search Results

NE686 Datasheets (26)

Part	Manufacturer	Description	Datasheet Type	PDF
NE686	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68618	NEC	Semiconductor Selection Guide	Original	PDF
NE68618	NEC	NPN silicon high frequency transistor.	Original	PDF
NE68618-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68618-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68618-T1-A	California Eastern Laboratories	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68619	NEC	Semiconductor Selection Guide	Original	PDF
NE68619	NEC	NPN silicon high frequency transistor.	Original	PDF
NE68619-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68619-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68619-T1-A	California Eastern Laboratories	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68630	NEC	Semiconductor Selection Guide	Original	PDF
NE68630	NEC	NPN silicon high frequency transistor.	Original	PDF
NE68630-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF

NE68630-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68633	NEC	Semiconductor Selection Guide	Original	PDF
NE68633	NEC	NPN silicon high frequency transistor.	Original	PDF
NE68633-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68633-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68639	NEC	Semiconductor Selection Guide	Original	PDF

NE686 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC5179 Abstract: 2SC5180 2SC5181 NE686 NE68618 NE68619 NE68630 NE68633 S21E transistor nec cel Text: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	NE686 8639R NE686 2SC5179 2SC5180 2SC5181 NE68618 NE68619 NE68630 NE68633 S21E transistor nec cel	PDF
2SC5181 Abstract: 2SC5179 2SC5180 NE686 NE68618 NE68619 NE68630 S21E UPA807T 73300 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	NE686 NE686 NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 24-Hour 2SC5181 2SC5179 2SC5180 NE68618 NE68619 NE68630 S21E UPA807T 73300	PDF
marking 269-3 sot23 Abstract: NE68618-T1-A IC ua 741 T 0599 Text: SILICON TRANSISTOR NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	NE686 8639R NE68618-T1-A NE68619-T1-A NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 marking 269-3 sot23 IC ua 741 T 0599	PDF
transistor 24 GHz Abstract: UPA807T-T1 10 ghz transistor UPA807T OF transistor 13 2 ghz transistor NE686 S21E transistor 9 GHz 5 GHZ TRANSISTOR Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1	Original	UPA807T NE686 UPA807T UPA807T-T1, 24-Hour transistor 24 GHz UPA807T-T1 10 ghz transistor OF transistor 13 2 ghz transistor S21E transistor 9 GHz 5 GHZ TRANSISTOR	PDF
transistor pt 6007 Abstract: NPN transistor 9418 c 5929 transistor C 5478 transistor transistor c 6093 9418 transistor transistor 9747 transistor k 4212 5294 power transistor transistor 5478 Text: SILICON TRANSISTOR UPA807T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz	Original	UPA807T NE686 UPA807T 24-Hour transistor pt 6007 NPN transistor 9418 c 5929 transistor C 5478 transistor transistor c 6093 9418 transistor transistor 9747 transistor k 4212 5294 power transistor transistor 5478	PDF
20323 Abstract: marking 269-3 sot23 S21E 2SC5179 2SC5180 2SC5181 NE686 NE68618 NE68619 NE68630 Text: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	NE686 8639R NE686 20323 marking 269-3 sot23 S21E 2SC5179 2SC5180 2SC5181 NE68618 NE68619 NE68630	PDF
marking 269-3 sot23 Abstract: NE68618 SOT-143 MARKING 557 2SC5179 2SC5180 2SC5181 NE686 NE68619 NE68630 NE68633 Text: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	NE686 NE686 NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 24-Hour marking 269-3 sot23 NE68618 SOT-143 MARKING 557 2SC5179 2SC5180 2SC5181 NE68619 NE68630 NE68633	PDF
transistor j50 Abstract: c 5929 transistor 9418 transistor transistor 9747 transistor pt 6007 468-1 MAG NPN transistor 9418 156-06 NE686 S21E Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 9 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 13 GHz	Original	UPA807T NE686 UPA807T low12 24-Hour transistor j50 c 5929 transistor 9418 transistor transistor 9747 transistor pt 6007 468-1 MAG NPN transistor 9418 156-06 S21E	PDF
AZ 2535 08 101 Abstract: transistor 9747 c 5929 transistor C 5478 transistor UPA807T 6292 transistor NE686 S21E UPA807T-T1 UPA807T-T1-A Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 9 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 13 GHz	Original	UPA807T NE686 UPA807T AZ 2535 08 101 transistor 9747 c 5929 transistor C 5478 transistor 6292 transistor S21E UPA807T-T1 UPA807T-T1-A	PDF
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101	PDF
Application Notes Abstract: catv DISTRIBUTION NETWORK diagram MQE920 CATV DISTRIBUTION NETWORK Colpitts VCO design Aeroflex PN9000 MQE523 datasheet series and parallel resonance circuit hyperabrupt tuned oscillator APN1016 Text: APPLICATION NOTE APN1016: A Low Phase Noise VCO Design for PCS Handset Applications Introduction The factors that have significant impact on the primary VCO electrical specifications may be summarized as follows: The VCO design in a PCS handset must satisfy a number of	Original	APN1016: Application Notes catv DISTRIBUTION NETWORK diagram MQE920 CATV DISTRIBUTION NETWORK Colpitts VCO design Aeroflex PN9000 MQE523 datasheet series and parallel resonance circuit hyperabrupt tuned oscillator APN1016	PDF
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic	PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77	PDF
2SK2396 Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××）品名 µPC8119T アプリケーション移動通信電源電圧電流周波数	Original	X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711	PDF

nf025 Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920	Original	X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408	PDF
Colpitts VCO design Abstract: MQE920 RDIV-3 protel PCB LAYOUT APN1016 Colpitts murata vco MQE523 varactor diode q factor measurement loop gain of Colpitts VCO design simu Text: Application Note A Low Phase Noise VCO Design for PCS Handset Applications APN1016 The factors that have significant impact on the primary VCO electrical specifications may be summarized as follows: Introduction The VCO design in a PCS handset must satisfy a number	Original	APN1016 APN1004, APN1006, APN1005, APN1007, APN1012, APN1013, 11/99A Colpitts VCO design MQE920 RDIV-3 protel PCB LAYOUT APN1016 Colpitts murata vco MQE523 varactor diode q factor measurement loop gain of Colpitts VCO design simu	PDF
84t MARKING Abstract: marking 83T transistor marking 68t NE68139R NE68739R marking 84t marking 28R 1817 transistor NE68539R NE68039R Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39R +0.2 2.8 -0.3 +0.10 0.6 -0.05 +0.2 1.5 -0.1 3 2 0.85 1.8 2.9 ± 0.2 0.95 1 1.1+0.2 -0.1 4 +0.10 0.4 -0.05 LEADS 1, 3, 4 0.16 +0.10	Original	NE68039R NE68139R NE68539R NE68639R NE68739R NE68839R NE85639R 84t MARKING marking 83T transistor marking 68t NE68139R NE68739R marking 84t marking 28R 1817 transistor NE68539R NE68039R	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: IMF =1 .5 dB TYP at 2 GHz • HIGH GAIN: \|S2 1 E\|2 = 9 dB TYP at 2 GHz . HIGH GAIN BANDWIDTH: fr = 13 GHz	OCR Scan	NE686 UPA807T UPA807T UPA807T-T1 24-Hour	PDF
PJ 0349 Abstract: CD 888 CB pj 0266 iv PJ 0399 pj 1126 1V nt 9989 pj 1126 SIC SOT343 IC HS 8108 pj 0159 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES HIGH GAIN BANDW IDTH PRO DUCT: fT o f 15 G H z LOW VO LTAG E/LO W CU R R EN T OPERATION HIGH INSERTION POW ER GAIN: \|S 21 E\|2 = 12 dB @ 2 V , 7 m A , 2 G H z \|S 2 1 E \|2 = 11 d B @ 1 V, 5 mA, 2 G H z	OCR Scan	NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 NE68639R-T1 PJ 0349 CD 888 CB pj 0266 iv PJ 0399 pj 1126 1V nt 9989 pj 1126 SIC SOT343 IC HS 8108 pj 0159	PDF
j 6815 transistor Abstract: nec k 4145 transistor pt 6007 JE 2938 B 1449 transistor Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: \|S 2 1 E\|2 = 9 dB TYP at 2 GHz . HIGH GAIN BANDW IDTH: It = 13 GHz	OCR Scan	NE686 UPA807T j 6815 transistor nec k 4145 transistor pt 6007 JE 2938 B 1449 transistor	PDF
cd 1691 cp Abstract: cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|Z = 11 dB @ 1 V, 5 mA, 2 GHz	OCR Scan	NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 NE68639-T1 cd 1691 cp cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600	PDF
ne666 Abstract: 21421 Series ic 74600 NE686 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fTof 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21EI2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 = 11 dB @ 1 V, 5 mA, 2 GHz	OCR Scan	IS21EI2 NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 ne666 21421 Series ic 74600	PDF
tt 18934 Abstract: 30i sot23 5140 SN 74500 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21El2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 =11 dB @ 1 V, 5m A, 2G H z	OCR Scan	IS21El2 IS21EI2 NE686 NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 tt 18934 30i sot23 5140 SN 74500	PDF
5252 F ic Abstract: ic 5252 F c 5252 transistor Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807t OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: IS21 EI2 = 9 dB TYP at 2 GHz	OCR Scan	NE686 UPA807t UPA807T UPA807T-T1 5252 F ic ic 5252 F c 5252 transistor	PDF

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NE686 Search Results

NE686 Datasheets (26)

NE686 Datasheets Context Search

2SC5179

2SC5181

marking 269-3 sot23

transistor 24 GHz

transistor pt 6007

20323

marking 269-3 sot23

transistor j50

AZ 2535 08 101

2SC3355 SPICE MODEL

Application Notes

FET marking code g5d

nec mosfet marked v75

2SK2396

nf025

Colpitts VCO design

84t MARKING

Untitled

PJ 0349

j 6815 transistor

cd 1691 cp

ne666

tt 18934

5252 F ic