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    NE76084S Search Results

    NE76084S Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE76084S NEC Low noise K to Ku band GaAs MESFET. Original PDF
    NE76084-SL NEC C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET Original PDF
    NE76084S-T1 NEC Low noise K to Ku band GaAs MESFET. Original PDF

    NE76084S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE76084

    Abstract: marking code t1a NE76084-T1 C10535E NE76084-SL NE76084-T1A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    NE76084-T1

    Abstract: NE76083A NE76084S 4439 gm
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 4 • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • ION IMPLANTATION • AVAILABLE IN TAPE & REEL


    Original
    PDF NE76084S NE76084S NE76084-T1 24-Hour NE76084-T1 NE76083A 4439 gm

    gs 069 0605

    Abstract: NE76084 marking code t1a nec 2571 NE76084-T1 C10535E NE76084-SL NE76084-T1A 6-18GHz NEC Ga FET marking V
    Text: DATA SHEET GaAs MES FET NE76084 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES PACKAGE DIMENSIONS Unit: mm • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz 1.78 ± 0.2 • Gate length: L g = 0.3 µ m


    Original
    PDF NE76084 NE76084-T1 NE76084-T1A gs 069 0605 NE76084 marking code t1a nec 2571 NE76084-T1 C10535E NE76084-SL NE76084-T1A 6-18GHz NEC Ga FET marking V

    4439 gm

    Abstract: NE76083A NE76084S NE76084-T1
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LOW COST METAL/CERAMIC PACKAGE • ION IMPLANTATION • AVAILABLE IN TAPE & REEL 21 3.5


    Original
    PDF NE76084S NE76084S NE76084-T1 24-Hour 4439 gm NE76083A NE76084-T1

    0544S

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 24 HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz 21 CO L g = 0.3 ^m , W g = 280 jam


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    PDF NE76084S NE76084S IS12I IS12I IS22I NE76084-T1 0544S

    yx 861

    Abstract: yx 801 BUH 508 VAUC GT 1083 NE76084-T1 NE76083A NE76084S L to Ku Band Low Noise GaAs MESFET x band GaAs MESFET 261
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE ANO ASSOCIATED GAIN vs FREQUENCY Vos = 3 V, Id s • 10 mA FEATURES LOW NOISE FIGURE NF * 1,6 d8 TYP a! f = 12 GHz HIGH ASSOCIATED GAIN G a = 9 0 0 TYP at f • 12 GHz LG • 0.3 ¿im. W g = 280 S LOW COST METAL/CERAMIC PACKAGE


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    PDF NE76084S NE76064S NE76084S test1342 NE76084-T1 yx 861 yx 801 BUH 508 VAUC GT 1083 NE76083A L to Ku Band Low Noise GaAs MESFET x band GaAs MESFET 261

    IC DS 1242

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Ids = 10 mA FEATURES • NE76084S LOW NOISE FIGURE NF = 1.6 dB TYP at f= 12 GHz • HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • Lg = 0.3 [im, Wg = 280 \im


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    PDF NE76084S NE76084S S12S21| NE76084-T1 24-Hour IC DS 1242

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


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    PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE LTO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE NF - 1.6 dB TYP at f - 12 GHz HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz m 33 , L g = 0.3 jim, Wg = 280 jim <


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    PDF NE76084 E76084 IS12S21I NE76084S NE76084-T1

    NE76084

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz < HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • L g = 0.3 im , W g = 280 Jim . LOW COST METAL/CERAMIC PACKAGE


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    PDF NE76084 NE76084 GHz21 lS211 NE76084S NE76084-T1 00b5511

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Ids = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP a tf = 12 GHz • HIGH ASSOCIATED GAIN Ga = 9 dB TYP at 1 = 12 GHz • La s 0.3 iim, Wa = 280 |xm


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    PDF NE76084 NE76084 NE76084S NE76084-T1