NP24N10CLB
Abstract: MP-25 NP24N10DLB NP24N10ELB
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP24N10CLB, NP24N10DLB, NP24N10ELB SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
|
Original
|
PDF
|
NP24N10CLB,
NP24N10DLB,
NP24N10ELB
O-262
O-220AB
NP24N10DLB
NP24N10CLB
O-263
O-220AB)
NP24N10CLB
MP-25
NP24N10DLB
NP24N10ELB
|
2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
|
Original
|
PDF
|
|
STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
|
Original
|
PDF
|
02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
|
TO220-SMD
Abstract: TO-220SMD TO220SMD NP55N06ELD STB80N06-10
Text: H I G H T E M P E R AT U R E N C H A N N E L P O W E R M O S F E T S NP SERIES • MAXIMUM JUNCTION TEMPERATURE OF 175˚C FUNCTIONAL EQUIVALENTS • DRAIN CURRENTS FROM 10A TO 84A WITH POWER DISSIPATION UP TO 190W • LOW AND HIGH VOLTAGE VERSIONS, UP TO 450V
|
Original
|
PDF
|
BUK465-100A
BUK466-100A
BUK565-100A
BUK7608-55
BUK7614-55
BUK7618-55
BUK7620-55
BUK7624-55
BUK7628-5
BUK7635-55
TO220-SMD
TO-220SMD
TO220SMD
NP55N06ELD
STB80N06-10
|
MP-25
Abstract: NP24N10CLB NP24N10DLB NP24N10ELB
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
TO-252 MOSFET p channel
Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering
|
Original
|
PDF
|
NL-5612
S-18322
F-78142
E-28007
NP-S-NEWS109V30
TO-252 MOSFET p channel
NP80N03CLE
NP80N03DLE
NP80N03ELE
NP80N04CHE
NP80N04DHE
NP80N04EHE
NP84N04CHE
NP84N04DHE
NP84N04EHE
|
MJ245
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
TO-252 MOSFET p channel
Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive
|
Original
|
PDF
|
Q3/2001
NL-5612
S-18322
F-78142
E-28007
NP-S-NEWS071V50
TO-252 MOSFET p channel
nec 288
powermosfet Gate Drive
STR 1504
TO-262 MOSFET
NP80N03CLE
NP80N03DLE
NP80N04CHE
NP80N04DHE
NP84N04CHE
|
