NP80N04DHE Search Results

NP80N04DHE Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
NP80N04DHE-S12-AY		Renesas Electronics Corporation	Power MOSFETs for Automotive

NP80N04DHE Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NP80N04DHE		NEC	SWITCHING N-CHANNEL POWER MOS FET		Original	PDF
NP80N04DHE		NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE		Original	PDF

NP80N04DHE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
80N04 Abstract: 80N04 HE NP80N04MHE NP80N04CHE NP80N04DHE NP80N04EHE NP80N04EHE-E1-AY NP80N04EHE-E2-AY NP80N04KHE NP80N04KHE-E1-AY Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04EHE, NP80N04KHE NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.	Original	PDF	NP80N04EHE, NP80N04KHE NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE NP80N04EHE-E1-AY NP80N04EHE-E2-AY NP80N04KHE-E2-AY NP80N04KHE-E1-AY 80N04 80N04 HE NP80N04MHE NP80N04CHE NP80N04DHE NP80N04EHE NP80N04EHE-E1-AY NP80N04EHE-E2-AY NP80N04KHE NP80N04KHE-E1-AY
D1423 Abstract: ITE 8502 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04CHE, NP80N04DHE, NP80N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.	Original	PDF	NP80N04CHE, NP80N04DHE, NP80N04EHE NP80N04CHE NP80N04DHE NP80N04EHE O-220AB O-262 O-263 O-220AB) D1423 ITE 8502
MP-25 Abstract: NP80N04CHE NP80N04DHE NP80N04EHE Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N04CHE, NP80N04DHE, NP80N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.	Original	PDF	NP80N04CHE, NP80N04DHE, NP80N04EHE O-220AB O-262 NP80N04DHE NP80N04CHE O-263 MP-25 NP80N04CHE NP80N04DHE NP80N04EHE
MP-25 Abstract: NP80N04CHE NP80N04DHE NP80N04EHE Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04CHE, NP80N04DHE, NP80N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.	Original	PDF	NP80N04CHE, NP80N04DHE, NP80N04EHE NP80N04CHE O-220AB O-262 NP80N04DHE O-263 O-220AB) MP-25 NP80N04CHE NP80N04DHE NP80N04EHE
NP80N04KHE Abstract: MP-25 NP80N04CHE NP80N04DHE NP80N04EHE Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04CHE,NP80N04DHE,NP80N04EHE,NP80N04KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect PART NUMBER Transistor designed for high current switching applications.	Original	PDF	NP80N04CHE NP80N04DHE NP80N04EHE NP80N04KHE NP80N04CHE NP80N04DHE O-262 NP80N04EHE O-220AB O-263 NP80N04KHE MP-25
MP25 transistor Abstract: NP80N04CHE NP80N04DHE NP80N04EHE MP-25 MP-25ZJ Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04CHE, NP80N04DHE, NP80N04EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications.	Original	PDF	NP80N04CHE, NP80N04DHE, NP80N04EHE O-220AB MP-25) O-262 MP-25 NP80N04DHE NP80N04CHE MP25 transistor NP80N04CHE NP80N04DHE NP80N04EHE MP-25ZJ
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	PDF	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
80N04 Abstract: NP80N04CHE NP80N04DHE NP80N04EHE NP80N04EHE-E1-AY NP80N04EHE-E2-AY NP80N04KHE NP80N04KHE-E1-AY NP80N04KHE-E2-AY NP80N04MHE Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
TO-252 MOSFET p channel Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering	Original	PDF	NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS109V30 TO-252 MOSFET p channel NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
mc10087f1 Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059 Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.	Original	PDF	IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
2SC5664 Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326 Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation	Original	PDF	D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
TO-252 MOSFET p channel Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive	Original	PDF	Q3/2001 NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS071V50 TO-252 MOSFET p channel nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE