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    MACOM NPT1004D

    RF MOSFET HEMT 28V 8SOIC
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    DigiKey NPT1004D Tube 24 1
    • 1 $70.68
    • 10 $55.733
    • 100 $70.68
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    Mouser Electronics NPT1004D
    • 1 $64.8
    • 10 $60.88
    • 100 $54.58
    • 1000 $54.58
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    Verical NPT1004D 71 2
    • 1 -
    • 10 $61.05
    • 100 $61.05
    • 1000 $61.05
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    Bristol Electronics NPT1004D 7
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    Richardson RFPD NPT1004D 71 1
    • 1 $61.03
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    • 100 $61.03
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    NPT1004D 95
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    • 100 $47.93
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    HOTCOLD HCR-031N/PT100/400C/230VAC

    Module: regulator; temperature; OUT: NO / NC; panel; HCR-031N
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    TME HCR-031N/PT100/400C/230VAC 1
    • 1 $93.26
    • 10 $93.26
    • 100 $93.26
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    NPT1004 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NPT1004D M/A-Com Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 45W DC-4GHZ 8SOIC Original PDF

    NPT1004 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance


    Original     		PDF NPT1004 2500MHz EAR99 4000MHz 400mA, 2500MHz, NDS-010

    NPT100

    Abstract: No abstract text available
    Text: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance


    Original     		PDF NPT1004 2500MHz EAR99 4000MHz 400mA, 2500MHz, NDS-010 NPT100

    NPT1004

    Abstract: NPT1004DR NPT1004DT NPT1004D J-162 25001-2 EAR99 JESD22-A113 JESD22-A114 2500-2700MHz
    Text: NPT1004 Datasheet Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz


    Original     		PDF NPT1004 2500MHz EAR99 4000MHz 400mA, 2500MHz, NDS-010 NPT1004DR NPT1004DT NPT1004D J-162 25001-2 JESD22-A113 JESD22-A114 2500-2700MHz

    NPTB00004

    Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100
    Text: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for


    Original     		PDF NPTB00004 PO150S NPT25015 NPT35015 NPT1012 2xNPT25100 NPTB00004 NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100

    NPT25100

    Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P
    Text: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader


    Original     		PDF NPTB00004 PO150S 99GHz 17GHz -35dBc NPT25015 NPT25100 800-1000MHz NPT25100 NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P

    NPTB00004

    Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate
    Text: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.


    Original     		PDF NPTB00004 PO150S NPT25015 NPTB00004 NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate

    NPTB00004

    Abstract: NPT25015 ofdm equations NPT1004 NPT35015 Nitron NPT25100 transistor study NPTB00025 AN-012
    Text: APPLICATION NOTE AN-012 GaN Essentials AN-012: Thermal Considerations for GaN Technology NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-012 GaN Essentials: Thermal Considerations for GaN Technology 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		PDF AN-012 AN-012: 64-QAM NPTB00004 NPT25015 ofdm equations NPT1004 NPT35015 Nitron NPT25100 transistor study NPTB00025 AN-012