Untitled
Abstract: No abstract text available
Text: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance
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Original
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PDF
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NPT1004
2500MHz
EAR99
4000MHz
400mA,
2500MHz,
NDS-010
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NPT100
Abstract: No abstract text available
Text: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance
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Original
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PDF
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NPT1004
2500MHz
EAR99
4000MHz
400mA,
2500MHz,
NDS-010
NPT100
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NPT1004
Abstract: NPT1004DR NPT1004DT NPT1004D J-162 25001-2 EAR99 JESD22-A113 JESD22-A114 2500-2700MHz
Text: NPT1004 Datasheet Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz
|
Original
|
PDF
|
NPT1004
2500MHz
EAR99
4000MHz
400mA,
2500MHz,
NDS-010
NPT1004DR
NPT1004DT
NPT1004D
J-162
25001-2
JESD22-A113
JESD22-A114
2500-2700MHz
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