Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NTE330 Search Results

    SF Impression Pixel

    NTE330 Price and Stock

    NTE Electronics Inc NTE330

    Transistor, bjt, pnp,40V V(Br)Ceo,25A I(C),to-36 |Nte Electronics NTE330
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE330 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Onlinecomponents.com NTE330 2
    • 1 $38.74
    • 10 $34.03
    • 100 $27.72
    • 1000 $26.2
    • 10000 $26.2
    Buy Now
    Bristol Electronics NTE330 6 1
    • 1 $36
    • 10 $36
    • 100 $36
    • 1000 $36
    • 10000 $36
    Buy Now
    NTE330 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Quest Components NTE330 4
    • 1 $39
    • 10 $39
    • 100 $39
    • 1000 $39
    • 10000 $39
    Buy Now
    NTE330 1
    • 1 $33.264
    • 10 $33.264
    • 100 $33.264
    • 1000 $33.264
    • 10000 $33.264
    Buy Now

    NTE Electronics Inc NTE3303

    INSULATED GATE BIPOLAR TRANSISTOR, 15A I(C), 600V V(BR)CES, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NTE3303 10
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    NTE Electronics Inc NTE3300

    Transistor: IGBT; 400V; 10A; 30W; TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME NTE3300 19 1
    • 1 $8.24
    • 10 $6.54
    • 100 $6.54
    • 1000 $6.54
    • 10000 $6.54
    Buy Now

    NTE330 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE330 NTE Electronics Germanium PNP Transistor High Power Switch Original PDF
    NTE330 NTE Electronics Bipolar Transistors Scan PDF
    NTE3300 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3301 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3302 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3303 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF

    NTE330 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE3303

    Abstract: No abstract text available
    Text: NTE3303 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original
    PDF NTE3303 NTE3303

    pnp germanium to36

    Abstract: NTE330 Germanium power
    Text: NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.


    Original
    PDF NTE330 NTE330 pnp germanium to36 Germanium power

    high speed diode 15A

    Abstract: NTE3303
    Text: NTE3303 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original
    PDF NTE3303 high speed diode 15A NTE3303

    10a 400v bipolar transistor

    Abstract: NTE3300 nte33
    Text: NTE3300 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original
    PDF NTE3300 10a 400v bipolar transistor NTE3300 nte33

    Untitled

    Abstract: No abstract text available
    Text: NTE3303 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original
    PDF NTE3303

    NTE3301

    Abstract: No abstract text available
    Text: NTE3301 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original
    PDF NTE3301 NTE3301

    NTE3302

    Abstract: No abstract text available
    Text: NTE3302 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original
    PDF NTE3302 NTE3302

    transistor bipolar collector current 1mA

    Abstract: NTE3300
    Text: NTE3300 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original
    PDF NTE3300 transistor bipolar collector current 1mA NTE3300

    transistor 600v

    Abstract: NTE3302
    Text: NTE3302 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original
    PDF NTE3302 transistor 600v NTE3302

    NTE3301

    Abstract: No abstract text available
    Text: NTE3301 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original
    PDF NTE3301 NTE3301

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original
    PDF