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    NTE33 Price and Stock

    NTE Electronics Inc NTE330

    Transistor, bjt, pnp,40V V(Br)Ceo,25A I(C),to-36 |Nte Electronics NTE330
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    Onlinecomponents.com NTE330 2
    • 1 $38.74
    • 10 $34.03
    • 100 $27.72
    • 1000 $26.2
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    Bristol Electronics NTE330 6 1
    • 1 $36
    • 10 $36
    • 100 $36
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    NTE330 1
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    Quest Components NTE330 4
    • 1 $39
    • 10 $39
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    NTE330 1
    • 1 $33.264
    • 10 $33.264
    • 100 $33.264
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    NTE Electronics Inc NTE333

    Transistor, bjt, npn,18V V(Br)Ceo,15A I(C),sot-123 |Nte Electronics NTE333
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    Newark NTE333 Bulk 1
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    Onlinecomponents.com NTE333 2
    • 1 $151.14
    • 10 $128.98
    • 100 $116.7
    • 1000 $113.6
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    Quest Components NTE333 9
    • 1 $110.487
    • 10 $101.988
    • 100 $101.988
    • 1000 $101.988
    • 10000 $101.988
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    NTE Electronics Inc NTE338

    Transistor, bjt, npn,24V V(Br)Ceo,3.5A I(C),sot-122 |Nte Electronics NTE338
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    Onlinecomponents.com NTE338 14
    • 1 $61.15
    • 10 $48.61
    • 100 $42.5
    • 1000 $41.34
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    Bristol Electronics NTE338 1
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    NTE Electronics Inc NTE335

    Transistor, bjt, npn,25V V(Br)Ceo,20A I(C),sot-121 |Nte Electronics NTE335
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    Newark NTE335 Bulk 1
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    Onlinecomponents.com NTE335 1
    • 1 $196.34
    • 10 $167.56
    • 100 $149.33
    • 1000 $149.33
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    Bristol Electronics NTE335 2 1
    • 1 $120
    • 10 $120
    • 100 $120
    • 1000 $120
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    Quest Components NTE335 3
    • 1 $167.58
    • 10 $167.58
    • 100 $167.58
    • 1000 $167.58
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    NTE Electronics Inc NTE3322

    Single Igbt, 900V, 60A; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:2.7V; Power Dissipation:200W; Collector Emitter Voltage Max:900V; No. Of Pins:3Pins; Operating Temperature Max:-; Product Range:-; Msl:- Rohs Compliant: Yes |Nte Electronics NTE3322
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    Onlinecomponents.com NTE3322 1
    • 1 $31.54
    • 10 $25.69
    • 100 $22.87
    • 1000 $21.69
    • 10000 $21.69
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    Find more NTE33 price and stock on Findchips.com

    NTE33 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE330 NTE Electronics Germanium PNP Transistor High Power Switch Original PDF
    NTE330 NTE Electronics Bipolar Transistors Scan PDF
    NTE3300 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3301 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3302 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3303 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE331 NTE Electronics Silicon Complementary Transistors Audio Power Amp, Switch Original PDF
    NTE331 NTE Electronics Bipolar Transistors Scan PDF
    NTE331 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor NPN, Si, Audio Power Amp Switch, Pkg Style TO220 Scan PDF
    NTE3310 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3311 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3312 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE331MP NTE Electronics Bipolar Transistors Scan PDF
    NTE332 NTE Electronics Silicon Complementary Transistor Audio Power Amp, Switch Original PDF
    NTE332 NTE Electronics Bipolar Transistors Scan PDF
    NTE332 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor PNP, Si, Audio Power Amp Switch, Pkg Style TO220 Scan PDF
    NTE3320 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3321 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3322 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF
    NTE3323 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF

    NTE33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE338F

    Abstract: No abstract text available
    Text: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP


    Original     		PDF NTE338F NTE338F 30MHz. 30MHz -30dB 001MHz 30MHz

    NTE3303

    Abstract: No abstract text available
    Text: NTE3303 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3303 NTE3303

    PO 168

    Abstract: 8-32-NC-3A Transistor 168 NTE338 8-32NC-3A
    Text: NTE338 Silicon NPN Transistor RF Power Amp Driver PO = 20W Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V


    Original     		PDF NTE338 8-32-NC-3A PO 168 8-32-NC-3A Transistor 168 NTE338 8-32NC-3A

    NTE3321

    Abstract: No abstract text available
    Text: NTE3321 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3321 NTE3321

    NTE3323

    Abstract: No abstract text available
    Text: NTE3323 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3323 NTE3323

    pnp germanium to36

    Abstract: NTE330 Germanium power
    Text: NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.


    Original     		PDF NTE330 NTE330 pnp germanium to36 Germanium power

    high speed diode 15A

    Abstract: NTE3303
    Text: NTE3303 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3303 high speed diode 15A NTE3303

    10a 400v bipolar transistor

    Abstract: NTE3300 nte33
    Text: NTE3300 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3300 10a 400v bipolar transistor NTE3300 nte33

    074c

    Abstract: NTE3322
    Text: NTE3322 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch TO3PBL Features: D Enhancemnt Mode Type D FRD Included Bwetwen Emitter and Collector D High Speed D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3322 -20A/s 074c NTE3322

    NTE3321

    Abstract: No abstract text available
    Text: NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3321 NTE3321

    Untitled

    Abstract: No abstract text available
    Text: NTE3303 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3303

    Untitled

    Abstract: No abstract text available
    Text: NTE3312 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3312

    NTE3322

    Abstract: No abstract text available
    Text: NTE3322 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3322 NTE3322

    8-32NC-3A

    Abstract: NTE337 8-32-NC-3A 8w RF POWER TRANSISTOR NPN
    Text: NTE337 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large– signal amplifier driver and pre–driver stages. This device is intended for use in industrial communications equipment operating at frequencies to 80MHz.


    Original     		PDF NTE337 NTE337 80MHz. 50MHz 36erwise 50MHz 800mW, 8-32NC-3A 8-32-NC-3A 8w RF POWER TRANSISTOR NPN

    NTE3320

    Abstract: No abstract text available
    Text: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3320 NTE3320

    NTE3312

    Abstract: NTE331
    Text: NTE3312 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3312 NTE3312 NTE331

    NTE3311

    Abstract: NTE331
    Text: NTE3311 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3311 NTE3311 NTE331

    NTE338F

    Abstract: 20W power transistor
    Text: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP


    Original     		PDF NTE338F NTE338F 30MHz. 30MHz 001MHz 30MHz 20W power transistor

    NTE3320

    Abstract: No abstract text available
    Text: NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3320 NTE3320

    NTE335

    Abstract: J341 NPN 250W NTE336 n-p-n r.f. power transistors J201 equivalent
    Text: NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:


    Original     		PDF NTE335 NTE336 NTE335 NTE336 30MHz. 30MHz 1817pF 777pF J341 NPN 250W n-p-n r.f. power transistors J201 equivalent

    Untitled

    Abstract: No abstract text available
    Text: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3320

    NTE3302

    Abstract: No abstract text available
    Text: NTE3302 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3302 NTE3302

    NTE3312

    Abstract: nte33
    Text: NTE3312 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3312 NTE3312 nte33

    NTE331

    Abstract: NTE332
    Text: NTE331 NPN & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications.


    Original     		PDF NTE331 NTE332 NTE331 NTE332