P06P03LVG
Abstract: P06P03 niko-sem
Text: P-Channel Logic Level Enhancement NIKO-SEM P06P03LVG Mode Field Effect Transistor SOP-8 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -6A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
|
Original
|
PDF
|
P06P03LVG
JUN-10-2004
P06P03LVG
P06P03
niko-sem
|
P70N02LDG
Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG
|
Original
|
PDF
|
O-263
P45N02LSG
P45N03LTG
P75N02LSG
P75N02LTG
P0903BSG
P0903BTG
P3055LSG
P3055LTG
P50N03LSG
P70N02LDG
p0603bdg
P60N03LDG
PA102FDG
P2503NPG
P45N02LDG
P0603BD
P1703BDG
P0403BDG
P3004ND5G
|
Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)
|
Original
|
PDF
|
ELM34417AA-N
ELM34417AA-N
P06P03LVG
JUN-10-2004
|
ELM34417AA
Abstract: No abstract text available
Text: 单 P 沟道 MOSFET ELM34417AA-N •概要 ■特点 ELM34417AA-N 是 P 沟道低输入电容，低工作电 •Vds=-30V 压，低导通电阻的大电流 MOSFET。 ·Id=-6A ·Rds on < 45mΩ (Vgs=-10V) ·Rds(on) < 75mΩ (Vgs=-4.5V) ■绝对最大额定值
|
Original
|
PDF
|
ELM34417AA-N
P06P03LVG
JUN-10-2004
ELM34417AA
|
Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)
|
Original
|
PDF
|
ELM34417AA-N
ELM34417AA-N
P06P03LVG
JUN-10-2004
|
P06P03
Abstract: No abstract text available
Text: シングル P チャンネル MOSFET ELM34417AA-N •概要 ■特長 ELM34417AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-6A ・ Rds on < 45mΩ (Vgs=-10V) ・ Rds(on) < 75mΩ (Vgs=-4.5V)
|
Original
|
PDF
|
ELM34417AA-N
P06P03LVG
JUN-10-2004
P06P03
|
