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    P45N02LDG Price and Stock

    Niko Semicondutor Co Ltd P45N02LDG

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    Bristol Electronics P45N02LDG 15,104
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    P45N02LDG 84
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    Quest Components P45N02LDG 12,083
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    P45N02LDG 67
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    Bristol Electronics P45N02LDG 725
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    Kingbright P45N02LDG

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    Bristol Electronics P45N02LDG 700
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    Quest Components P45N02LDG 560
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    Others P45N02LDG

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    Quest Components P45N02LDG 580
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    P45N02LDG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    P45N02LDG Niko Semiconductor N-Channel Logic Level Enhancement FET Original PDF

    P45N02LDG Datasheets Context Search

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    P45N02LDG

    Abstract: Niko Semiconductor p45n02ldg P45N02LD dpak code Niko Semiconductor P45N02 Field Effect Transistor SM-150 diode TO252
    Text: P45N02LDG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 20mΩ 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P45N02LDG O-252 Temperatu04 Sep-02-2004 P45N02LDG Niko Semiconductor p45n02ldg P45N02LD dpak code Niko Semiconductor P45N02 Field Effect Transistor SM-150 diode TO252

    ELM32430LA

    Abstract: p45n02ldg
    Text: 单 N 沟道 MOSFET ELM32430LA-S •概要 ■特点 ELM32430LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=45A ·Rds on < 28mΩ (Vgs=10V) ·Rds(on) < 30mΩ (Vgs=7V) ■绝对最大额定值 项目


    Original     		PDF ELM32430LA-S P45N02LDG O-252 Sep-02-2004 ELM32430LA p45n02ldg

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32430LA-S •General description ■Features ELM32430LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=45A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=7V)


    Original     		PDF ELM32430LA-S ELM32430LA-S P45N02LDG O-252 Sep-02-2004

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    P45N02LD

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32430LA-S •General description ■Features ELM32430LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=45A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=7V)


    Original     		PDF ELM32430LA-S ELM32430LA-S P45N02LDG O-252 Sep-02-2004 P45N02LD

    p45n02ldg

    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM32430LA-S •概要 ■特長 ELM32430LA-S は低入力容量 低電圧駆動、 低 ・ Vds=25V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=45A ・ Rds on < 28mΩ (Vgs=10V) ・ Rds(on) < 30mΩ (Vgs=7V)


    Original     		PDF ELM32430LA-S P45N02LDG O-252 Sep-02-2004 p45n02ldg