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    P4404EDG Search Results

    P4404EDG Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P4404EDG Niko Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor ( Preliminary ) Original PDF
    P4404EDG Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF

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    nikos

    Abstract: P4404EDG P4404 sem 2005 nikos transistor dpak code Niko K 192 A transistor TO252 P4404ED
    Text: P-Channel Logic Level Enhancement NIKO-SEM P4404EDG Mode Field Effect Transistor Preliminary TO-252(DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 44mΩ -10A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)


    Original     		PDF P4404EDG O-252 JAN-17-2005 O-252 nikos P4404EDG P4404 sem 2005 nikos transistor dpak code Niko K 192 A transistor TO252 P4404ED

    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM32409LA-S •概要 ■特長 ELM32409LA-S は低入力容量 低電圧駆動、 低 ・ Vds=-40V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-10A ・ Rds on < 44mΩ (Vgs=-10V) ・ Rds(on) < 68mΩ (Vgs=-4.5V)


    Original     		PDF ELM32409LA-S P4404EDG O-252 JAN-17-2005

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    ELM32409LA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM32409LA-S •概要 ■特点 ELM32409LA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-40V ·Id=-10A ·Rds on < 44mΩ (Vgs=-10V) ·Rds(on) < 68mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original     		PDF ELM32409LA-S P4404EDG O-252 JAN-17-2005 ELM32409LA

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM32409LA-S •General description ■Features ELM32409LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-10A Rds(on) < 44mΩ (Vgs=-10V) Rds(on) < 68mΩ (Vgs=-4.5V)


    Original     		PDF ELM32409LA-S ELM32409LA-S P4404EDG O-252 JAN-17-2005

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM32409LA-S •General description ■Features ELM32409LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-10A Rds(on) < 44mΩ (Vgs=-10V) Rds(on) < 68mΩ (Vgs=-4.5V)


    Original     		PDF ELM32409LA-S ELM32409LA-S P4404EDG O-252 JAN-17-2005