B24N10
Abstract: YMB 06
Text: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch
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Original
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PDF
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PJB24N10
2002/95/EC
O-263
MIL-STD-750
B24N10
O-263
800PCS/REEL
2010-REV
B24N10
YMB 06
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Untitled
Abstract: No abstract text available
Text: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch
|
Original
|
PDF
|
PJB24N10
2002/95/EC
O-263
MIL-STD-750
B24N10
O-263
800PCS/REEL
983A5F
2010-REV
|