Untitled
Abstract: No abstract text available
Text: PJN1N60D TO-92 600V N-Channel Enhancement Mode MOSFET FEATURES • 0.5A, 600V, RDS ON =15Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS
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PJN1N60D
2002/95/EC
MIL-STD-750
1N60D
700ppm,
1000ppm
100ppm.
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Untitled
Abstract: No abstract text available
Text: PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers
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PDF
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PJ04N03D
O-252
2002/95/EC
O-252
MIL-STD-750
04N03D
983A5F
2009-REV
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Untitled
Abstract: No abstract text available
Text: PJP24N10 / PJF24N10 TO-220AB / ITO-220AB 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ TO-220AB ITO-220AB • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current
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PJP24N10
PJF24N10
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch
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Original
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PDF
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PJB24N10
2002/95/EC
O-263
MIL-STD-750
B24N10
O-263
800PCS/REEL
983A5F
2010-REV
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