Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ123S PN123S Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package 2.0±0.2 For optical control systems
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PNZ123S
PN123S)
CTRLR102-001
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package
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2002/95/EC)
PNZ123S
PN123S)
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"Photo Interrupter" Application Note
Abstract: LN62S PN123S PNZ123S
Text: Phototransistors PNZ123S PN123S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.)
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PNZ123S
PN123S)
LN62S
"Photo Interrupter" Application Note
PN123S
PNZ123S
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ123S PN123S Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package 2.0±0.2 For optical control systems
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PNZ123S
PN123S)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package
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2002/95/EC)
PNZ123S
PN123S)
CTRLR102-001
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PNZ123S
Abstract: PN123S
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type For optical control systems • Features High sensitivity Low collector-emitter cutoff current (base open) Fast response: tr = 3 s (typ.)
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2002/95/EC)
PNZ123S
PN123S)
PNZ123S
PN123S
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LN62S
Abstract: PNZ123S
Text: Phototransistors PNZ123S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Low dark current Fast response : tr = 3.5 µs typ.
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PNZ123S
LN62S
PNZ123S
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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