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    PZT2907A Price and Stock

    onsemi PZT2907AT3G

    TRANS PNP 60V 0.6A SOT223
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    DigiKey PZT2907AT3G Cut Tape 102,969 1
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    onsemi PZT2907AT1G

    TRANS PNP 60V 0.6A SOT223
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    DigiKey PZT2907AT1G Reel 10,000 1,000
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    Nexperia PZT2907A,135

    TRANS PNP 60V 0.6A SOT-223
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PZT2907A,135 Digi-Reel 7,658 1
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    Suzhou Good-Ark Electronics Co Ltd PZT2907A

    TRANS PNP 60V 0.6A SOT-223
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
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    onsemi SPZT2907AT1G

    TRANS PNP 60V 0.6A SOT223
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    PZT2907A Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PZT2907A Fairchild Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS GP PNP 60V 800MA SOT223 Original PDF
    PZT2907A Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
    PZT2907A Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
    PZT2907A Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
    PZT2907A Kexin PNP switching transistor Original PDF
    PZT2907A Micro Commercial Components TRANS GP BJT PNP 60V A 3SOT-223 Original PDF
    PZT2907A Motorola SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT Original PDF
    PZT2907A National Semiconductor PNP General Purpose Amplifier Original PDF
    PZT2907A NXP Semiconductors PZT2907A - PNP switching transistor - Complement: PZT2222A ; fT min: 200 MHz; hFE max: 300 ; hFE min: 100 ; IC max: 600 mA; Polarity: PNP ; Ptot max: 1150 mW; toff: 365 ns; VCEO max: 60 V Original PDF
    PZT2907A On Semiconductor Small Signal A/Switch PNP Original PDF
    PZT2907A Philips Semiconductors PNP switching transistor Original PDF
    PZT2907A Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
    PZT 2907A Siemens General Purpose Bipolar Transistor, NPN Dual Collector, 60V, SOT-223, 4-Pin Original PDF
    PZT2907A Siemens PNP Silicon Switching Transistors Original PDF
    PZT2907A Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    PZT2907A Siemens Cross Reference Guide 1998 Original PDF
    PZT2907A TY Semiconductor PNP switching transistor - SOT-223 Original PDF
    PZT2907A Weitron PNP Silicon Planar Epitaxial Transistor Original PDF
    PZT2907A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    PZT2907A National Semiconductor PNP General Purpose Amplifier Scan PDF

    PZT2907A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PZT2907A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD PZT2907A Preliminary PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER „ DESCRIPTION This UTC PZT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. „ ORDERING INFORMATION


    Original
    PZT2907A PZT2907A PZT2907AG-AA3-R OT-223 PDF

    marking code nt amplifier

    Abstract: MARKING 2907A 2907A BF
    Text: MMBT2907A PZT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original
    PN2907A MMBT2907A PZT2907A PN2907A MMBT2907A OT-23 OT-223 O-92-3 marking code nt amplifier MARKING 2907A 2907A BF PDF

    PZT2907A

    Abstract: 2907a TRANSISTOR PNP MARKING 2907A
    Text: PZT2907A PNP Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 P b Lead Pb -Free SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 4 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


    Original
    PZT2907A OT-223 PZT2907A 300us, 26-Aug-05 OT-223 2907a TRANSISTOR PNP MARKING 2907A PDF

    MARKING P2F

    Abstract: transistors sot-223 06a
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PZT2907A PNP Plastic-Encapsulate Transistors Surface Mount SOT-223 Package Capable of 1Watts of Power Dissipation


    Original
    PZT2907A OT-223 OT-223 -50Vdc, --10Vdc) -10Vdc) -10mAdc, -150mAdc, MARKING P2F transistors sot-223 06a PDF

    transistors sot-223 06a

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PZT2907A PNP Plastic-Encapsulate Transistors Surface Mount SOT-223 Package Capable of 1Watts of Power Dissipation


    Original
    PZT2907A OT-223 -50Vdc, --10Vdc) -10Vdc) -10mAdc, -150mAdc, -500mAdc, transistors sot-223 06a PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 PZT2222A TRANSISTOR NPN FEATURES z Epitaxial planar die construction z Complementary PNP Type available (PZT2907A) 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    OT-223 OT-223 PZT2222A PZT2907A) 150mA 500mA 500mA, 150mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2907A SOT-223 TRANSISTOR PNP FEATURES Power dissipation PCM: 1 1. BASE W (Tamb=25℃) 2. COLLECTOR 3. EMITTER Collector current ICM: -0.6 A Collector-base voltage


    Original
    OT-223 PZT2907A OT-223 -10mA -10mA -150mA -500mA -150mA -15mA -500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2222A TRANSISTOR NPN SOT-223 FEATURES z Epitaxial planar die construction z Complementary PNP Type available (PZT2907A) 1 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original
    OT-223 PZT2222A OT-223 PZT2907A) 150mA 500mA 500mA, 150mA, PDF

    p2f sot-223

    Abstract: PZT2907AT1G MARKING P2F transistor P2F on semiconductor p2f p2F 45 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3
    Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original
    PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1/D p2f sot-223 PZT2907AT1G MARKING P2F transistor P2F on semiconductor p2f p2F 45 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3 PDF

    Untitled

    Abstract: No abstract text available
    Text: PZT2222A SOT-223 Transistor NPN 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features — — Epitaxial planar die construction Complementary PNP Type available (PZT2907A) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage


    Original
    PZT2222A OT-223 OT-223 PZT2907A) 150mA 500mA 500mA, 150mA, PDF

    PZT2907

    Abstract: PZT2907A PZT2222 PZT2222A
    Text: PZT2907 / PZT2907A PZT2907 / PZT2907A Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-09 Power dissipation Verlustleistung 6.5±0.2 1.65 3±0.1 Plastic case Kunststoffgehäuse


    Original
    PZT2907 PZT2907A OT-223 UL94V-0 PZT2907 PZT2222, PZT2222A PZT2907A PZT2222 PZT2222A PDF

    Untitled

    Abstract: No abstract text available
    Text: PN2907A / MMBT2907A / PZT2907A PN2907A MMBT2907A PZT2907A C C E C B TO-92 B SOT-23 E B SOT-223 Mark: 2F E C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced


    Original
    PN2907A MMBT2907A PZT2907A PN2907A MMBT2907A OT-23 OT-223 -10mA PDF

    p2f sot-223

    Abstract: PZT2907AT1G transistor P2F on semiconductor p2f MARKING P2F p2F 45 PZT2907AT1G data AYW marking code IC DATASHEET OF IC 713 1N916
    Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original
    PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1/D p2f sot-223 PZT2907AT1G transistor P2F on semiconductor p2f MARKING P2F p2F 45 PZT2907AT1G data AYW marking code IC DATASHEET OF IC 713 1N916 PDF

    transistor c-111

    Abstract: TRANSISTOR 111
    Text: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a genHigh-Current Gain Bandwidth Product fT : eral-purpose amplifier or switch in applications that


    Original
    PN2907A MMBT2907A PZT2907A PN2907A, MMBT2907A, PZT2907A OT-223) PN2222A, MMBT2222A, transistor c-111 TRANSISTOR 111 PDF

    Untitled

    Abstract: No abstract text available
    Text: PZT2907A Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).4 @I(C) (A) (Test Condition)150m


    Original
    PZT2907A Freq200M time40n PDF

    transistors sot-223 06a

    Abstract: ON MARKING P2F P2F MARKING
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • PZT2907A PNP Plastic-Encapsulate Transistors Surface Mount SOT-223 Package Capable of 1Watts of Power Dissipation


    Original
    PZT2907A OT-223 OT-223 -50Vdc, --10Vdc) -10Vdc) -10mAdc, -150mAdc, transistors sot-223 06a ON MARKING P2F P2F MARKING PDF

    PZT2222A

    Abstract: PZT2907A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT2907A SOT-223 TRANSISTOR PNP FEATURES y y 1 1. BASE Epitaxial planar die construction Complementary PNP Type available(PZT2222A) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original
    OT-223 PZT2907A OT-223 PZT2222A) Par150mA -500mA -150mA -15mA -500mA -50mA PZT2222A PZT2907A PDF

    MMBT2907A

    Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A SOIC-16
    Text: PN2907A MMBT2907A PZT2907A C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2F NMT2907 MMPQ2907 E B E B E B SOIC-16 B E C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .2B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier


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    PN2907A MMBT2907A PZT2907A OT-23 OT-223 NMT2907 MMPQ2907 SOIC-16 MMBT2907A MMPQ2907 NMT2907 PN2907A PZT2907A SOIC-16 PDF

    MMBT2907A

    Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A T092
    Text: PN2907A I MMBT2907A / MMPQ2907/ NMT2907 I PZT2907A D iscrete P O W E R & S ig n a l Technologies National e t S e m i c o n d u c t o r ' " MMBT2907A PN2907A SOT-23 PZT2907A B SOT-223 Mark: 2F NMT2907 MMPQ2907 SOIC-16 ° PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier


    OCR Scan
    PN2907A MMBT2907A PZT2907A OT-23 OT-223 MMPQ2907 NMT2907 bS0113D DD40ti30 bS01130 MMPQ2907 NMT2907 PN2907A PZT2907A T092 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E pitaxial Transistor PZT2907AT1 M otorola Preferred Device T h is PNP S ilico n E pitaxial tra n s is to r is d e sig ned fo r use in lin e a r and switching applications. The device is housed in the SOT-223 package which is


    OCR Scan
    PZT2907AT1 OT-223 PZT2222AT1 b3ti75SS J357b PDF

    PN2907A

    Abstract: No abstract text available
    Text: PN2907A MMBT2907A TO-92 SOT-23 PZT2907A SOT-223 Mark: 2F MMPQ2907 NMT2907 SOT-6 Bi Mark: 200 SOIC-16 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from


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    PN2907A MMBT2907A OT-23 PZT2907A OT-223 MMPQ2907 NMT2907 SOIC-16 QD33415 PN2907A PDF

    PZT2907

    Abstract: PZT2907A
    Text: 711002t. DDbTTbS IPHIN PZT2907 PZT2907A SILICON PLANAR EPITAXIAL TRANSISTORS PNP m edium pow er transistors in a m icro m in ia tu re SMD envelope SO T-223 . Designed p rim a rily fo r high-speed sw itching and d rive r applications. ~ v CB0 m ax. 60 V 40 V


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    711002t. PZT2907 PZT2907A OT-223) PZT2907A PDF

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm MMBT2907A B / MMPQ2907 / NMT2907 / PZT2907A SOT-23 PZT2907A SOT-223 Mark: 2F MMPQ2907 NMT2907 PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r use as a g e n e ra l p u rp o se a m p lifie r a n d s w itc h re q u irin g c o lle c to r c u rre n ts to 5 0 0 m A . S o u rc e d


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    PN2907A MMBT2907A PZT2907A MMPQ2907 NMT2907 OT-23 OT-223 PDF

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R tm MMBT2907A PZT2907A cjiàiiÌÌll SOT-23 . B / MMPQ2907 / NMT2907 / PZT2907A w B SOT-223 Mark: 2F PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s a g e n e ra l p u rp o s e a m p lifie r a n d s w itc h re q u irin g c o lle c to r c u rre n ts to 5 0 0 m A . S o u rc e d


    OCR Scan
    MMBT2907A PZT2907A OT-23 MMPQ2907 NMT2907 OT-223 PDF