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    Mitsubishi Electric RD01MUS1-T113

    TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,600MA I(D),SOT-89 (Also Known As: RD01MUS1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RD01MUS1-T113 1,600
    • 1 $3.456
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    • 100 $3.456
    • 1000 $1.296
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    RD01MUS1-T113 1,600
    • 1 $3.456
    • 10 $3.456
    • 100 $3.456
    • 1000 $1.296
    • 10000 $1.296
    		Buy Now
    RD01MUS1-T113 339
    • 1 $3.456
    • 10 $3.456
    • 100 $1.728
    • 1000 $1.5984
    • 10000 $1.5984
    		Buy Now
    RD01MUS1-T113 339
    • 1 $3.456
    • 10 $3.456
    • 100 $1.728
    • 1000 $1.5984
    • 10000 $1.5984
    		Buy Now

    RD01MUS1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RD01MUS1 Mitsubishi RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W Original PDF
    RD01MUS1 Mitsubishi Silicon MOSFET Power Transistor 520 MHz, 1 W Original PDF

    RD01MUS1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RD01MUS1-101

    Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 c111m RD01MSU1 3M Touch Systems

    GRM1882C1H100JA01D

    Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V


    Original     		PDF AN-900-040-A RD01MUS1 RD07MUS2B 763-870MHz RD07MUS2B: 086ZE-G" RD01MUS1: RD07MUS2B 250mA GRM1882C1H100JA01D GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D

    RD01MUS1

    Abstract: adj 2576
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-060-A Date : 19th Oct. 2004 Rev.date : 22th June. 2010 Prepared : M.Wada, S.Kametani Confirmed : T.Ohkawa Taking change of Silicon RF By MIYOSHI Electronics SUBJECT: RD01MUS1 RF Characteristics at Vdd=3.6/ 4.5/ 7.2V


    Original     		PDF AN-UHF-060-A RD01MUS1 RD01MUS1: 135MHz 100mA 527MHz 0mm/50 AN-UHF-060 adj 2576

    RD07MVS1

    Abstract: RD01MUS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006 Date : 21th Aug. 2003 Prepared : M.Wada Confirmed : T.Ohkawa RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data Po vs. Frequency


    Original     		PDF AN-900-006 RD07MVS1 RD01MUS1 800MHz RD07MVS1: 031AA" RD01MUS1: 764-870MHz RD07MVS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735

    RD01MUS1

    Abstract: RD07MVS1B
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028-A Date : 6th July. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Takase S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz.


    Original     		PDF AN-900-028-A RD01MUS1 RD07MVS1B 740-870MHz. RD07MVS1B: 068YD-G" RD01MUS1: RD07MVS1B 740-870MHz RD01MUS1

    RD07MVS1

    Abstract: RD01MUS1
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008 Date : 7th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data


    Original     		PDF AN-900-008 RD01MUS1 RD07MVS1 800MHz RD07MVS1: 031AA" RD01MUS1: RD07MVS1 740-870MHz RD01MUS1

    equivalent transistor c 243

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION 4.6MAX RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS1 520MHz RD01MUS1 520MHz 48MAX 53MAX equivalent transistor c 243

    2779, transistor

    Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS1 520MHz RD01MUS1 520MHz 2779, transistor 1348 transistor RD01MSU1 fet 547

    RD01MUS1

    Abstract: 180PF
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019-B Date : 9th Jan. 2003 Rev.date : 7th Jan. 2010 Prepared : T.Akaishi S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 RF characteristics data


    Original     		PDF AN-UHF-019-B RD01MUS1 RD01MUS1. RD01MUS1: 022XA" 136MHz 136MHz) 155MHz 155MHz) 175MHz 180PF

    RD01MUS1

    Abstract: RD07MVS1 848/b+5891
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013Date : 11th Nov. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics SUBJECT: SUMMARY: This application note shows the RF characteristics data for VHF wide band Po vs. Frequency


    Original     		PDF AN-VHF-013Date RD01MUS1 RD07MVS1 RD01MUS1: 2K291" RD07MVS1: 031AA" 135-175MHz RD01MUS1 848/b+5891

    5139 mosfet

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION


    Original     		PDF RD01MUS1 520MHz RD01MUS1 RD01MUS1-101 Oct2011 5139 mosfet

    RD01MUS1-101

    Abstract: RD01MSU1 RD01MUS1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 RD01MSU1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor

    RD01MUS1-101

    Abstract: RD01MUS1 fet 547 2779, transistor RD01MSU1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 fet 547 2779, transistor RD01MSU1

    RD01MUS1

    Abstract: D 1556 RD07MVS1
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008-A Date : 7th Oct. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band.


    Original     		PDF AN-900-008-A RD01MUS1 RD07MVS1 800MHz RD07MVS1: 031AA" RD01MUS1: RD07MVS1 740-870MHz RD01MUS1 D 1556

    RD01MUS1

    Abstract: RD07MVS1
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006-A Date : 21th Aug. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band.


    Original     		PDF AN-900-006-A RD07MVS1 RD01MUS1 800MHz RD07MVS1: 031AA" RD01MUS1: 764-870MHz RD07MVS1

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION


    Original     		PDF RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101

    diode gp 429

    Abstract: RD01MUS1 RD07MVS1B RD07M RD07MVS AN-900-028
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028 Date : 6th July. 2007 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: : T.Ohkawa RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz. SUMMARY: This application note shows the RF Wide band characteristics data


    Original     		PDF AN-900-028 RD01MUS1 RD07MVS1B 740-870MHz. RD07MVS1B: 068YD-G" RD01MUS1: RD07MVS1B 740-870MHz diode gp 429 RD01MUS1 RD07M RD07MVS AN-900-028

    RD01MUS1

    Abstract: micro strip line MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019 Date : 9th Jan. 2003 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD01MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data with


    Original     		PDF AN-UHF-019 RD01MUS1 RD01MUS1. RD01MUS1: 022XA" 136MHz 155MHz 175MHz 520MHz 0mm/50 micro strip line MITSUBISHI APPLICATION NOTE RF POWER

    rd01mus1 applications

    Abstract: RD01MUS1-101 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS1 520MHz RD01MUS1 RD01MUS1-101 rd01mus1 applications 3M Touch Systems

    RD01MUS1

    Abstract: RD02MUS1 RD30HVF1 ANGEN038 1.5kohm RD07MVS1 RD30HUF1 mitsubishi rf
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-038 Date : 16th Sep. 2003 Prepared : S.Kametani Confirmed : T.Ohkawa Test result of surge tolerance for RD-series SUBJECT: SUMMARY: This application note show the test results of surge tolerance for RD-series.


    Original     		PDF AN-GEN-038 RD01MUS1 RD02MUS1 RD07MVS1 RD30HVF1 RD30HUF1 100pF /100pF RD01MUS1 RD02MUS1 RD30HVF1 ANGEN038 1.5kohm RD07MVS1 RD30HUF1 mitsubishi rf

    marking 7W 66

    Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041

    RD07MUS2B

    Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
    Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053

    transistor 1971 mitsubishi

    Abstract: MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26th/Feb.J02 RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    OCR Scan     		PDF RD01MUS1 520MHz RD01MUS1 520MHz 0-48MAX OT-89 25deg TIO750 transistor 1971 mitsubishi MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994

    transistor 16933

    Abstract: No abstract text available
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25th/Nov.’02 MITSUBISHI RF POWER MOS FET RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    OCR Scan     		PDF 25th/Nov. RD01MUS1 520MHz RD01MUS1 520MHz 25deg transistor 16933