RD02MUS1
Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD02MUS1
175MHz
520MHz
RD02MUS1
175MHz,
520MHz
175MHz)
520MHz)
T112
UHF transistor FET
RD02MUS1-101
3M Touch Systems
transistor J17
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RD02MUS1
Abstract: 146MHz 488-MHz
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017-B Date : 23th Dec. 2002 Rev.date : 7thJan. 2010 Prepared : T.Akaishi S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1 RF characteristics data
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AN-UHF-017-B
RD02MUS1
RD02MUS1.
RD02MUS1:
023XA"
146MHz
146MHz)
175MHz
175MHz)
440MHz
146MHz
488-MHz
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mosfet 1412
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 6.0+/-0.15 0.2+/-0.05 specifically designed for VHF/UHF RF power RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.
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RD02MUS1B
175MHz
520MHz
RD02MUS1B
RD02MUS1
175MHz,
175MHz)
520MHz)
mosfet 1412
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rd02mus1
Abstract: AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017 Date : 23th Dec. 2002 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD02MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and
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AN-UHF-017
RD02MUS1
RD02MUS1.
RD02MUS1:
023XA"
146MHz
175MHz
440MHz
450MHz
470MHz
AN-UHF-017
146MHz
488-MHz
RD02MUS1 equivalent
ANUHF017
MITSUBISHI APPLICATION NOTE RF POWER
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RD02MVS1
Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15
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RD02MUS1B
175MHz
520MHz
RD02MUS1B
RD02MUS1
RD02MVS1
T112
mosfet 1412
6D20
mosfet 4501
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transistor rf m 1104
Abstract: transistor equivalent D 1047 RD02MUS1 transistor 2439 transistor equivalent 1047 S 170 MOSFET TRANSISTOR transistor 4317 RD02MSU1
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po
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RD02MUS1
175MHz
520MHz
RD02MUS1
520MHz
175MHz)
520MHz)
transistor rf m 1104
transistor equivalent D 1047
transistor 2439
transistor equivalent 1047
S 170 MOSFET TRANSISTOR
transistor 4317
RD02MSU1
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transistor rf m 1104
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION 0.2+/-0.05 specifically designed for VHF/UHF RF power 1 1.0+/-0.05 4.9+/-0.15 amplifiers applications. FEATURES 2 INDEX MARK
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RD02MUS1
175MHz
520MHz
RD02MUS1
175MHz,
520MHz
175MHz)
520MHz)
Oct2011
transistor rf m 1104
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RD02MUS1
Abstract: transistor rf m 1104 mosfet 840 datasheet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
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RD02MUS1
175MHz
520MHz
RD02MUS1
520MHz
175MHz)
520MHz)
transistor rf m 1104
mosfet 840 datasheet
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GRM1882C1H5R0CZ01D
Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V
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AN-UHF-111
RD00HVS1
RD02MUS1B
400-470MHz,
470MHz.
RD00HVS1:
RD02MUS1B:
103AJ-G"
400MHz
470MHz,
GRM1882C1H5R0CZ01D
GRM1882C1H101JA01D
GRM188R11H102KA01D
capasitor 6.5v .14 f
RPC05-101J
GRM1882C1H5R0C
grm188r11h
GRM1882C1H150JA01D
RPC05-0R0
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GRM1882C1H330JA01D
Abstract: GRM1882C1H101JA01D GRM1882C1H470JA01D RD02MUS1B GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-108-A Date : 3th Jun. 2010 Rev. Date :22th Jun. 2010 Prepared : H.Ukita, K.Osaki Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.
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AN-UHF-108-A
RD02MUS1B
470MHz,
470MHz.
RD02MUS1B:
093AF-G"
400MHz
435MHz
LLQ1608-F3N6
300pF
GRM1882C1H330JA01D
GRM1882C1H101JA01D
GRM1882C1H470JA01D
GRM1882C1H120DZ01D
GRM1882C1H301JA01D
rd02mus1
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RD02MUS1B
Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15
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RD02MUS1B
175MHz
520MHz
RD02MUS1B
RD02MUS1
T112
mosfet 4501
3M Touch Systems
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RD02MUS1
Abstract: RD02MUS1-101 T112 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD02MUS1
175MHz
520MHz
RD02MUS1
RD02MUS1-101
T112
3M Touch Systems
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RD02MUS1
Abstract: RD07MVS1 mitsubishi bipolar rf power pcb warpage after reflow MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-034-C Date : 5th Oct. 2006 Prepared : E.Akiyama S.Kametani Confirmed : T.Ohkawa SUBJECT: Recommended mounting & precaution for RD07MVS1&RD02MUS1 SUMMARY: This application note shows recommendation device mount method & precaution for
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AN-GEN-034-C
RD07MVS1
RD02MUS1
RD02MUS1.
AN-GEN-034
507mm.
RD02MUS1
mitsubishi bipolar rf power
pcb warpage after reflow
MITSUBISHI APPLICATION NOTE RF POWER
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION RD02MUS1 is a MOS FET type transistor 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) OUTLINE specifically designed for VHF/UHF RF power
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RD02MUS1
175MHz
520MHz
RD02MUS1
175MHz)
520MHz)
175MHz,
520MHz
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PDF
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3M Touch Systems
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD02MUS1
175MHz
520MHz
RD02MUS1
175MHz,
175MHz)
520MHz)
3M Touch Systems
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PDF
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RD02MUS1B
Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 2.0+/-0.05 2 3.5+/-0.05
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RD02MUS1B
175MHz
520MHz
RD02MUS1B
RD02MUS1
T112
mosfet 4501
3M Touch Systems
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PDF
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pcb warpage after reflow
Abstract: RD02MUS1 RD07MVS1
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-034-D Date : 5th Dec. 2003 Rev.date : 7th Jan. 2010 Prepared : N.Watanabe M.Wada Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Recommended mounted & precaution for RD07MVS1&RD02MUS1
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AN-GEN-034-D
RD07MVS1
RD02MUS1
RD02MUS1.
AN-GEN-034
507mm.
pcb warpage after reflow
RD02MUS1
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RD02MUS1
Abstract: T112 transistor marking zg RD02MVS1
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
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RD02MUS1
175MHz
520MHz
RD02MUS1
RD02MUS1-101
T112
transistor marking zg
RD02MVS1
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PDF
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 6.0+/-0.15 0.2+/-0.05 specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than 1.0+/-0.05
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RD02MUS1B
175MHz
520MHz
RD02MUS1B
RD02MUS1
175MHz,
520MHz
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RD01MUS1
Abstract: RD02MUS1 RD30HVF1 ANGEN038 1.5kohm RD07MVS1 RD30HUF1 mitsubishi rf
Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-038 Date : 16th Sep. 2003 Prepared : S.Kametani Confirmed : T.Ohkawa Test result of surge tolerance for RD-series SUBJECT: SUMMARY: This application note show the test results of surge tolerance for RD-series.
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AN-GEN-038
RD01MUS1
RD02MUS1
RD07MVS1
RD30HVF1
RD30HUF1
100pF
/100pF
RD01MUS1
RD02MUS1
RD30HVF1
ANGEN038
1.5kohm
RD07MVS1
RD30HUF1
mitsubishi rf
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RD100HHF1
Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V
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30-900MHz
H-CR624-E
KI-0612
RD100HHF1
RD70HVF1
rd16hhf1
RD15HVF1
RD06HVF1
RD16HHF1 application notes
RD70HVF
RD70HHF1
RD01MUS2
RD06HHF1
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RM15TB-H
Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;
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CM400HA
CM600HA
CM600HB
CM100DY
CM150DY
CM200DY
CM300DY
CM400DY
CM600DY
RM15TB-H
RM10TB-H
RA45H8087M
rd00hhf1
rm30tn-h
RM10TB
RM250HB-10F
ps11023-a
PS11023
mitsubishi PS11023-A
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RD02MUS1
Abstract: MOSFET RF POWER TRANSISTOR VHF
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES — — R evision date: 28 /Apr. 02 I J MI TSUBI SHI RF POWER MOS FET RD02MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,2W DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power
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OCR Scan
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1RD02MUS1
520MHz
RD02MUS1
520MHz)
25deg
MOSFET RF POWER TRANSISTOR VHF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:17th/Dec.’02 ELETROSTATIC SENSITIVE DEVICES RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,7.2V,2W OUTLINE DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power
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OCR Scan
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RD02MUS1
175MHz
520MHz
RD02MUS1
520MHz
520MHz)
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