Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RD02MUS1 Search Results

    SF Impression Pixel

    RD02MUS1 Price and Stock

    Mitsubishi Electric RD02MUS1-101

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics RD02MUS1-101 8 1
    • 1 $8.96
    • 10 $5.824
    • 100 $5.824
    • 1000 $5.824
    • 10000 $5.824
    		Buy Now
    Quest Components RD02MUS1-101 6
    • 1 $12
    • 10 $6
    • 100 $6
    • 1000 $6
    • 10000 $6
    		Buy Now

    RD02MUS1 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RD02MUS1 Mitsubishi Silicon MOSFET Power Transistor 175 MHz, 520 MHz, 2 W Original PDF
    RD02MUS1 Mitsubishi Silicon MOSFET Power Transistor 175MHz, 520MHz,2W Original PDF
    RD02MUS1 Mitsubishi Transistor Mosfet N 30V 1.5A Original PDF
    RD02MUS1B Mitsubishi Silicon MOSFET Power Transistor 175MHz,520MHz,2W Original PDF

    RD02MUS1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RD02MUS1

    Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


    Original     		PDF RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17

    RD02MUS1

    Abstract: 146MHz 488-MHz
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017-B Date : 23th Dec. 2002 Rev.date : 7thJan. 2010 Prepared : T.Akaishi S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1 RF characteristics data


    Original     		PDF AN-UHF-017-B RD02MUS1 RD02MUS1. RD02MUS1: 023XA" 146MHz 146MHz) 175MHz 175MHz) 440MHz 146MHz 488-MHz

    mosfet 1412

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 6.0+/-0.15 0.2+/-0.05 specifically designed for VHF/UHF RF power RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.


    Original     		PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 175MHz, 175MHz) 520MHz) mosfet 1412

    rd02mus1

    Abstract: AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017 Date : 23th Dec. 2002 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD02MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and


    Original     		PDF AN-UHF-017 RD02MUS1 RD02MUS1. RD02MUS1: 023XA" 146MHz 175MHz 440MHz 450MHz 470MHz AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER

    RD02MVS1

    Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


    Original     		PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 RD02MVS1 T112 mosfet 1412 6D20 mosfet 4501

    transistor rf m 1104

    Abstract: transistor equivalent D 1047 RD02MUS1 transistor 2439 transistor equivalent 1047 S 170 MOSFET TRANSISTOR transistor 4317 RD02MSU1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po


    Original     		PDF RD02MUS1 175MHz 520MHz RD02MUS1 520MHz 175MHz) 520MHz) transistor rf m 1104 transistor equivalent D 1047 transistor 2439 transistor equivalent 1047 S 170 MOSFET TRANSISTOR transistor 4317 RD02MSU1

    transistor rf m 1104

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION 0.2+/-0.05 specifically designed for VHF/UHF RF power 1 1.0+/-0.05 4.9+/-0.15 amplifiers applications. FEATURES 2 INDEX MARK


    Original     		PDF RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) Oct2011 transistor rf m 1104

    RD02MUS1

    Abstract: transistor rf m 1104 mosfet 840 datasheet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.


    Original     		PDF RD02MUS1 175MHz 520MHz RD02MUS1 520MHz 175MHz) 520MHz) transistor rf m 1104 mosfet 840 datasheet

    GRM1882C1H5R0CZ01D

    Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V


    Original     		PDF AN-UHF-111 RD00HVS1 RD02MUS1B 400-470MHz, 470MHz. RD00HVS1: RD02MUS1B: 103AJ-G" 400MHz 470MHz, GRM1882C1H5R0CZ01D GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h GRM1882C1H150JA01D RPC05-0R0

    GRM1882C1H330JA01D

    Abstract: GRM1882C1H101JA01D GRM1882C1H470JA01D RD02MUS1B GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-108-A Date : 3th Jun. 2010 Rev. Date :22th Jun. 2010 Prepared : H.Ukita, K.Osaki Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.


    Original     		PDF AN-UHF-108-A RD02MUS1B 470MHz, 470MHz. RD02MUS1B: 093AF-G" 400MHz 435MHz LLQ1608-F3N6 300pF GRM1882C1H330JA01D GRM1882C1H101JA01D GRM1882C1H470JA01D GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1

    RD02MUS1B

    Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15


    Original     		PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 T112 mosfet 4501 3M Touch Systems

    RD02MUS1

    Abstract: RD02MUS1-101 T112 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


    Original     		PDF RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 3M Touch Systems

    RD02MUS1

    Abstract: RD07MVS1 mitsubishi bipolar rf power pcb warpage after reflow MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-034-C Date : 5th Oct. 2006 Prepared : E.Akiyama S.Kametani Confirmed : T.Ohkawa SUBJECT: Recommended mounting & precaution for RD07MVS1&RD02MUS1 SUMMARY: This application note shows recommendation device mount method & precaution for


    Original     		PDF AN-GEN-034-C RD07MVS1 RD02MUS1 RD02MUS1. AN-GEN-034 507mm. RD02MUS1 mitsubishi bipolar rf power pcb warpage after reflow MITSUBISHI APPLICATION NOTE RF POWER

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION RD02MUS1 is a MOS FET type transistor 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) OUTLINE specifically designed for VHF/UHF RF power


    Original     		PDF RD02MUS1 175MHz 520MHz RD02MUS1 175MHz) 520MHz) 175MHz, 520MHz

    3M Touch Systems

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


    Original     		PDF RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 175MHz) 520MHz) 3M Touch Systems

    RD02MUS1B

    Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 2.0+/-0.05 2 3.5+/-0.05


    Original     		PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 T112 mosfet 4501 3M Touch Systems

    pcb warpage after reflow

    Abstract: RD02MUS1 RD07MVS1
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-034-D Date : 5th Dec. 2003 Rev.date : 7th Jan. 2010 Prepared : N.Watanabe M.Wada Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Recommended mounted & precaution for RD07MVS1&RD02MUS1


    Original     		PDF AN-GEN-034-D RD07MVS1 RD02MUS1 RD02MUS1. AN-GEN-034 507mm. pcb warpage after reflow RD02MUS1

    RD02MUS1

    Abstract: T112 transistor marking zg RD02MVS1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.


    Original     		PDF RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 transistor marking zg RD02MVS1

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 6.0+/-0.15 0.2+/-0.05 specifically designed for VHF/UHF RF power amplifiers applications. RD02MUS1B improved a drain surge than 1.0+/-0.05


    Original     		PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 175MHz, 520MHz

    RD01MUS1

    Abstract: RD02MUS1 RD30HVF1 ANGEN038 1.5kohm RD07MVS1 RD30HUF1 mitsubishi rf
    Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-038 Date : 16th Sep. 2003 Prepared : S.Kametani Confirmed : T.Ohkawa Test result of surge tolerance for RD-series SUBJECT: SUMMARY: This application note show the test results of surge tolerance for RD-series.


    Original     		PDF AN-GEN-038 RD01MUS1 RD02MUS1 RD07MVS1 RD30HVF1 RD30HUF1 100pF /100pF RD01MUS1 RD02MUS1 RD30HVF1 ANGEN038 1.5kohm RD07MVS1 RD30HUF1 mitsubishi rf

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


    Original     		PDF 30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1

    RM15TB-H

    Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
    Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;


    Original     		PDF CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A

    RD02MUS1

    Abstract: MOSFET RF POWER TRANSISTOR VHF
    Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES — — R evision date: 28 /Apr. 02 I J MI TSUBI SHI RF POWER MOS FET RD02MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,2W DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power


    OCR Scan     		PDF 1RD02MUS1 520MHz RD02MUS1 520MHz) 25deg MOSFET RF POWER TRANSISTOR VHF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:17th/Dec.’02 ELETROSTATIC SENSITIVE DEVICES RD02MUS1 Silicon MOSFET Power Transistor 175MHz,520MHz,7.2V,2W OUTLINE DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power


    OCR Scan     		PDF RD02MUS1 175MHz 520MHz RD02MUS1 520MHz 520MHz)