Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RF1K4909396 Search Results

    SF Impression Pixel

    RF1K4909396 Price and Stock

    Rochester Electronics LLC RF1K4909396

    MOSFET 2P-CH 12V 2.5A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RF1K4909396 Bulk 485
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.62
    • 10000 $0.62
    Buy Now
    RF1K4909396 Bulk 485
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.62
    • 10000 $0.62
    Buy Now

    Fairchild Semiconductor Corporation RF1K4909396

    RF1K4909396 - Power Field-Effect Transistor, 2.5A, 12V, 2-Element, P-Channel, MOSFET, MS-012AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RF1K4909396 1,942 1
    • 1 $0.5958
    • 10 $0.5958
    • 100 $0.5601
    • 1000 $0.5064
    • 10000 $0.5064
    Buy Now

    Harris Semiconductor RF1K4909396

    RF1K4909396 - Power Field-Effect Transistor, 2.5A, 12V, 2-Element, P-Channel, MOSFET, MS-012AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RF1K4909396 2,074 1
    • 1 $0.5958
    • 10 $0.5958
    • 100 $0.5601
    • 1000 $0.5064
    • 10000 $0.5064
    Buy Now

    RF1K4909396 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RF1K4909396 Fairchild Semiconductor 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET Original PDF
    RF1K4909396 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RF1K4909396 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF1K49093

    Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
    Text: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original
    PDF RF1K49093 RF1K49093 1e-30 61e-4 09e-6) 10e-3 99e-6) 82e-3 47e-7) AN7254 AN9321 AN9322 MS-012AA RF1K4909396

    RF1K49093

    Abstract: RF1K4909396 AN9321 AN9322 MS-012AA TB334
    Text: RF1K49093 Data Sheet January 2002 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,


    Original
    PDF RF1K49093 130opment. RF1K49093 RF1K4909396 AN9321 AN9322 MS-012AA TB334

    RF1K4909396

    Abstract: delta motor RF1K49093 AN9321 AN9322 MS-012AA TB334
    Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses


    Original
    PDF RF1K49093 RF1K4909396 delta motor RF1K49093 AN9321 AN9322 MS-012AA TB334

    C1005COG1H101JT

    Abstract: Samsung 2N2222 C1005X7R1C103KT MCR01MZsF 2N2907 PNP Transistor RF1K49093 505 transistor TRANSISTOR C144 DSSS transceiver 20dB processing gain AM79C930
    Text: PRISM1KIT-EVAL DSSS PC Card Wireless LAN Description Application Note August 1999 AN9624.6 Authors: Carl Andren, Mike Paljug, and Doug Schultz Integrated RF Solutions, Inc. Introduction The PRISM1KIT-EVAL wireless LAN PC card is a complete wireless high


    Original
    PDF AN9624 HFA3925 HFA3424 HFA3724 ICL7660S RF1K49093 HFA3524A C1005COG1H101JT Samsung 2N2222 C1005X7R1C103KT MCR01MZsF 2N2907 PNP Transistor 505 transistor TRANSISTOR C144 DSSS transceiver 20dB processing gain AM79C930

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original
    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    RF1K49093

    Abstract: AN9321 AN9322 MS-012AA RF1K4909396 TB334
    Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses


    Original
    PDF RF1K49093 RF1K49093 AN9321 AN9322 MS-012AA RF1K4909396 TB334

    relay 12v dc 5 chan

    Abstract: No abstract text available
    Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V Title This Dual P-Channel power MOSFET is manufactured using F1K4 an advanced MegaFET process. This process, which uses


    Original
    PDF RF1K49093 relay 12v dc 5 chan

    MCR01MZsF

    Abstract: 505 transistor C1005COG1H101JT SMT0402 Samsung 2N2222 gh c101 C1005X7R1C103KT 2N2907 PNP Transistor MCR01MZSJ0R00 C124-C130
    Text: PRISM1KIT-EVAL DSSS PC Card Wireless LAN Description TM Application Note August 1999 AN9624.6 Authors: Carl Andren, Mike Paljug, and Doug Schultz Integrated RF Solutions, Inc. Introduction The PRISM1KIT-EVAL wireless LAN PC card is a complete wireless high


    Original
    PDF AN9624 MCR01MZsF 505 transistor C1005COG1H101JT SMT0402 Samsung 2N2222 gh c101 C1005X7R1C103KT 2N2907 PNP Transistor MCR01MZSJ0R00 C124-C130

    Untitled

    Abstract: No abstract text available
    Text: RF1K49093 HARRIS S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 2.5 A, 12V The RF1K49093 Dual P-Channel power MOSFET is manu­ factured using an advanced MegaFET process. This pro­


    OCR Scan
    PDF RF1K49093 RF1K49093 85e-10 1e-30 09e-6) 99e-6) 82e-3 47e-7)

    MS-012-AA

    Abstract: RF1K4909396
    Text: RF1K49093 fü HARRIS S E M I C O N D U C T O R January 1997^ .ss 2.5A, 12V, Avalanche Rated, Logic Level, Dual B>GN^ttneH1ttleFET Enhancement Mode Power MOSFET , Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manu­ factured using an advanced MegaFET process. This pro­


    OCR Scan
    PDF RF1K49093 RF1K49093 TA49093. MS-012AA RF1K4909396. MS-012AA MS-012-AA RF1K4909396

    Untitled

    Abstract: No abstract text available
    Text: i n t e r e RF1K49093 » D a ta S h e e t A u g u s t 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,


    OCR Scan
    PDF RF1K49093 RF1K49093 -25Cma AN7254 AN7260.