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    RFP2N10 Price and Stock

    Rochester Electronics LLC RFP2N10

    N-CHANNEL, MOSFET
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    DigiKey RFP2N10 Bulk 1,323
    • 1 -
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    • 10000 $0.29
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    onsemi RFP2N10L

    MOSFET N-CH 100V 2A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFP2N10L Tube 800
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    Fairchild Semiconductor Corporation RFP2N10L

    POWER FIELD-EFFECT TRANSISTOR, 2A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RFP2N10L 22
    • 1 $4.608
    • 10 $3.3792
    • 100 $3.072
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    Harris Semiconductor RFP2N10L

    POWER FIELD-EFFECT TRANSISTOR, 2A I(D), 100V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RFP2N10L 19
    • 1 $3.84
    • 10 $2.816
    • 100 $2.816
    • 1000 $2.816
    • 10000 $2.816
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    Harris Semiconductor RFP2N10

    2A, 100V, 1.05ohm, N-Channel, MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFP2N10 1,323 1
    • 1 $0.2817
    • 10 $0.2817
    • 100 $0.2648
    • 1000 $0.2394
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    RFP2N10 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFP2N10 Intersil 2A, 80V and 100V, 1.05 ?, N-Channel Power MOSFETs Original PDF
    RFP2N10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP2N10 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V, Scan PDF
    RFP2N10 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFP2N10 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFP2N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFP2N10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFP2N10L Fairchild Semiconductor 2A, 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFP2N10L Harris Semiconductor Power MOSFET Selection Guide Original PDF
    RFP2N10L Intersil 2A, 80V and 100V, 1.050 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFP2N10L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP2N10L General Electric N-channel logic level power field-effect transistor (LL FET). 100V, 2A. Scan PDF
    RFP2N10L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFP2N10L Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFP2N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN7254

    Abstract: AN7260 RFP2N08L RFP2N10L TB334
    Text: RFP2N08L, RFP2N10L Data Sheet July 1999 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in


    Original     		PDF RFP2N08L, RFP2N10L RFP2N08L RFP2N10L AN7254 AN7260 TB334

    AN7254

    Abstract: AN7260 RFP2N08L RFP2N10L TB334 FAIRCHILD to220ab package
    Text: RFP2N08L, RFP2N10L Data Sheet January 2002 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in


    Original     		PDF RFP2N08L, RFP2N10L RFP2N08L RFP2N10L AN7254 AN7260 TB334 FAIRCHILD to220ab package

    RFP2N10L

    Abstract: AN7254 AN7260 RFP2N08L TB334
    Text: RFP2N08L, RFP2N10L Data Sheet Title FP2 8L, P2 0L bt A, V d 0V, 50 m, gic vel, July 1999 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically


    Original     		PDF RFP2N08L, RFP2N10L TA0924. RFP2N08L O-220AB TB334 RFP2N10L AN7254 AN7260 RFP2N08L TB334

    AN7254

    Abstract: AN7260 RFP2N08 RFP2N10 TB334 RFP2N010
    Text: RFP2N08, RFP2N10 Semiconductor 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2A, 80V and 100V • Linear Transfer Characteristics These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as


    Original     		PDF RFP2N08, RFP2N10 TA09282. AN7254 AN7260. AN7260 RFP2N08 RFP2N10 TB334 RFP2N010

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    Untitled

    Abstract: No abstract text available
    Text: HC5517 Data Sheet July 1998 3 REN Ringing SLIC For ISDN Modem/TA and WLL [ /Title HC55 17 /Subject (3 REN Ringing SLIC For ISDN Mode m/TA and WLL) /Autho r () /Keywords (Intersil Corporation, Telecom, SLICs, SLACs , Telephone, Telephony, WLL, Wireless Local


    Original     		PDF HC5517 HC5517

    "Toggle Switch" spdt on/off

    Abstract: ac voltmeter circuit diagrams AC voltmeter diagram AN9606 AN960-6
    Text: TM Operation of the HC5517, HC55171 Evaluation Board HC5517EVAL, HC55171EVAL Application Note July 1997 AN9606.5 Features HC5517EVAL Board SLIC Controls • Thru-SLIC Ringing up to 44VRMS into 3 REN at 10% THD with a -80V Battery The design of the HC5517EVAL board incorporates three


    Original     		PDF HC5517, HC55171 HC5517EVAL, HC55171EVAL) AN9606 HC5517EVAL 44VRMS HC5517 "Toggle Switch" spdt on/off ac voltmeter circuit diagrams AC voltmeter diagram AN960-6

    diode a4W

    Abstract: zener 4147 ringing tip ring pots telephone 90v 48v ZENER DIODE t2 Adjustable Power Supply Schematic Diagram 40vdc NTE cross TIP 34 pnp spdt 12v 150 OHM relay datasheet 5vdc, 150ma power relay a4w 41
    Text: HC5517 Data Sheet July 1998 3 REN Ringing SLIC For ISDN Modem/TA and WLL File Number 4147.2 Features • Thru-SLIC Open Circuit Ringing Voltage up to 77VPEAK/54VRMS, 3 REN Capability at 44VRMS he HC5517 is a ringing SLIC designed to accommodate a wide variety of local loop applications. The various applications


    Original     		PDF HC5517 77VPEAK/54VRMS, 44VRMS HC5517 diode a4W zener 4147 ringing tip ring pots telephone 90v 48v ZENER DIODE t2 Adjustable Power Supply Schematic Diagram 40vdc NTE cross TIP 34 pnp spdt 12v 150 OHM relay datasheet 5vdc, 150ma power relay a4w 41

    AN9607

    Abstract: HC5517 Adjustable Power Supply Schematic Diagram 40vdc
    Text: NS ESIG D W TM R NE UCT D FO E PROD E D MEN ITUT 5186 COM SUBST 85, HC5 E R 551 NOT SSIBLE ,Data 1 HC Sheet 7 PO 1 5 HC5 3 REN Ringing SLIC For ISDN Modem/TA and WLL 4147.3 • Sinusoidal Ringing Capability • DI Process Provides Substrate Latch Up Immunity when


    Original     		PDF

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    SPDT TOGGLE SWITCH

    Abstract: R2527 28V DC supply ring generator 1N4744 15V 1W HC5517 HC55171 AC voltmeter connection diagram textool socket R31 RTD ca741
    Text: Operation of the HC5517, HC55171 Evaluation Board HC5517EVAL, HC55171EVAL Application Note July 1997 AN9606.5 Features HC5517EVAL Board SLIC Controls • Thru-SLIC Ringing up to 44VRMS into 3 REN at 10% THD with a -80V Battery • Includes Transhybrid Circuit for Voice and Pulse


    Original     		PDF HC5517, HC55171 HC5517EVAL, HC55171EVAL) AN9606 HC5517EVAL 44VRMS HC5517 2N2907 SPDT TOGGLE SWITCH R2527 28V DC supply ring generator 1N4744 15V 1W AC voltmeter connection diagram textool socket R31 RTD ca741

    Untitled

    Abstract: No abstract text available
    Text: tyvvys S RFP2N08L, RFP2N10L S e m ico n d ucto r 7 2A, 80V and 100V, 1.05 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 2A, 80V and 100V The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors


    OCR Scan     		PDF RFP2N08L, RFP2N10L RFP2N08L AN7254and AN7260.

    RFL1N08L

    Abstract: RFL1N10L RFP2N08L RFP2N10L
    Text: Logic-Level Power MOSFETs_ RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L File Number 1510 N-Channel Logic Level Power Fielcf-Effect Transistors L2 FET 1 and 2 A, 80 V and 100 V ros(on): 1.05fi and 1 .2 0 Features: • Design optim ized fo r 5 volt gate drive


    OCR Scan     		PDF RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L 92cs-3374i RFL1N08L RFL1N10L RFP2N08L RFP2N10L

    Untitled

    Abstract: No abstract text available
    Text: interdi RFP2N08L, RFP2N10L D a ta S h e e t J u ly 1999 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in


    OCR Scan     		PDF RFP2N08L, RFP2N10L RFP2N08L RFP2N10L TA0924. 050ft AN7254 AN7260.

    2N10L

    Abstract: 2N08L
    Text: RFP2N08L RFP2N10L H a r r is August 1991 N-Channel Logic Level Power Field-Effect Transistors L2 FET Package Features • TO -22 0 A B TOP VIEW 2A, 8 0 V and 100V • rD S (0 N ) = 1 -0 5 n DRAIN (FLANGE) • Design O p tim ized for 5 V G ate Drives • Can b e D riven D irectly from Q M O S, N M O S, T T L C ircuits


    OCR Scan     		PDF RFP2N08L RFP2N10L 2N10L 2N08L

    RFL1N08

    Abstract: RFL1N10 RFP2N08 RFP2N10 92CS-W528 S4352
    Text: Standard Power MOSFETs RFL1N08, RFL1N10, RFP2N08, RFP2N10 File N um ber 1385 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 80 and 100 V rDs on : 1.05CÎ and 1.2fi Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds


    OCR Scan     		PDF RFL1N08, RFL1N10, RFP2N08, RFP2N10 RFL1N08 RFL1N10 RFP2N08 RFP2N10 92CS-W528 S4352

    Untitled

    Abstract: No abstract text available
    Text: m H a rris RFP2N08 RFP2N10 N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Package Features TO-220AB • 2A , 8 0 V and 1 0 0V TOP VIEW • l'D S °n = 1 -0 5 0 • S O A is P o w er-D lssip atio n Lim ited DRAIN (FLANGE) • N anosecond S w itching S peeds


    OCR Scan     		PDF RFP2N08 RFP2N10 O-220AB AN-7260. 92CS-53I76 92CS- 92CS-55IT8

    RFP2N06

    Abstract: 1N10 RFL1N10 RFL1N08 RFP2N08 RFP2N10
    Text: G E SOLID STATE Ôï i>i”|3fl7SDfll OOlflO'ï? b 3875081 G E S O L I D S T A T E Standard Power MOSFETs 01E 18097 D T -3 ? ~ RFL1N08, RFL1N10, RFP2N08, RFP2N10 * File Num ber N-Charinel Enhancement-Mode


    OCR Scan     		PDF RFL1N08, RFL1N10, RFP2N08, RFP2N10 RFL1N08 RFL1N10 RFP2N08 RFP2N10 2CS-35I75 S2CS-96138 RFP2N06 1N10

    transistor N342

    Abstract: TC1-C RFL1N08L RFL1N10L TA9525 RFP2N08L RFP2N10L RFP mosfets
    Text: 38 75081 =01 G E SOL ID S T A TE Logic-Level Power MOSFÉTs T e 1 3 ö 7 5 0 ö 1 0 0 1 0 4 2 4 t, 01E18424 D 'T ~ '~ ^ 7~ ' RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L File Number 1510 N-Channel Logic Level


    OCR Scan     		PDF RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L RFL1N08L RFL1N10L RFP2N08L transistor N342 TC1-C TA9525 RFP mosfets

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N

    Untitled

    Abstract: No abstract text available
    Text: HC5517 HARRIS S E M I C O N D U C T O R Ringing SLIC Subscriber Line Interface Circuit J a n u a ry 1997 Features Description • Thru-SLIC Open Circuit Ringing Voltage up to 77VPEAK/54VRMS> 3 REN Capability at 44V rms The HC 5517 is a ringing SLIC designed to accom m odate a


    OCR Scan     		PDF HC5517 77VPEAK/54VRMS> 1N4007 1N914 1N4744 1N5255 2N2907 RFP2N10 R25-27 CA741C

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    Untitled

    Abstract: No abstract text available
    Text: HC5517 HARRIS S E M I C O N D U C T O R 3 REN Ringing SLIC For ISDN Modem/TA and WLL Ju ly 1998 Features Description • T hru-S L IC Open Circuit Ringing Voltage up to The HC 5517 is a ringing SLIC designed to accom m odate a w ide variety of local loop applications. The various applications


    OCR Scan     		PDF HC5517 1-800-4-HARRIS