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    RX2731B90W Search Results

    RX2731B90W Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RX2731B90W Philips Semiconductors Pulsed Microwave Power Transistor Original PDF

    RX2731B90W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    common base amplifier circuit designing

    Abstract: RX2731B90W
    Text: - 3 t 3 - RX2731B90W PHILIPS INTERNATIONAL SbE J> • 711Dô2fa D 0 4 b S 3 D 10Ô « P H I N PULSED MICROWAVE POWER TRANSISTOR N P N silic o n planar e p ita x ia l m icrow ave pow er transistor, intended fo r use in a com m on-base class-C broadband pulse pow er a m p lifie r w ith a frequency range o f 2.7 to 3.1 G H z.


    OCR Scan     		PDF T-33- RX2731B90W 711Dfi2b D04bS3D 711005b 0D4b534 common base amplifier circuit designing RX2731B90W

    Untitled

    Abstract: No abstract text available
    Text: Af1ER P H IL IP s T dT s CRETE DbTT DEVELOPMENT DA I A • t.tS 3131 O D lsn s fe> ■ This data sheet contains advance information and specifications are subject to change without notice. _ y RX2731B90W T - 3 3 - ’ iS ' PULSED M ICRO W AVE POWER TRANSISTOR


    OCR Scan     		PDF RX2731B90W ensuring32>

    transistor 2TH

    Abstract: RX2731B90W
    Text: AMER P H I L I P S / D I S C R E T E ObE D btS3T31 D G l S n S D E V E L O P M E N T DA I A t • RX2731B90W T h is data sheet c o n ta in s advance in fo rm a tio n and sp e cific atio n s are subject t o c hange w it h o u t notice. T-33-IS- PU LSED M IC R O W A V E POW ER T R A N SIST O R


    OCR Scan     		PDF btS3T31 RX2731B90W T-33-IS- bfa53131 X-33-/S transistor 2TH RX2731B90W

    Untitled

    Abstract: No abstract text available
    Text: - 3 3 - 1S> RX2731B90W t PHILIPS INTERNATI ON AL ShE D • 7110fl2b 00MbS30 106 PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power amplifier with a frequency range o f 2.7 to 3.1 GHz.


    OCR Scan     		PDF RX2731B90W 7110fl2b 00MbS30 T-33-15 0D4b534

    MX0912B250Y

    Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y
    Text: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4


    OCR Scan     		PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W FO-91 RX1214B300Y MX0912B250Y RV2833B5X RV3135B5X RZ2731B16W MRB11175Y

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 5SE D • bbSHiai 0011.231 ■ ^ 3 3 ~ \ Power Devices MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE < G H z Vcc (V) U 1.2 - 1.4 1.2 -1 .4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 42 50


    OCR Scan     		PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W MRB11175Y MRB11350Y MSB11900Y

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    1B200Y

    Abstract: MRB11040W
    Text: 68 RF/Microwave Devices M icrow ave Transistors, Pulsed Power cont. Type No. Package Outline (V) tp @ (us) 40 40 40 40 40 40 40 40 24 40 40 24 50 45 50 50 50 50 50 50 50 50 50 50 50 50 50 vcc f (GHz) Duty Cycle Pl TTC (% ) (W) GP (dB) (% ) 100 100 100 100


    OCR Scan     		PDF RZ2731B16W RZ3135B14W RZ2731B32W RZ3135B28W RZ2731B48W RZ3135B42W RZ2731B60W RZ3135B50W RV3135B5X RX2731B90W 1B200Y MRB11040W