BDT29
Abstract: BDT29B BDT30 TIP29 c4060
Text: 11 N AMER PHILIPS/DISCRETE 25E D • bfa53131 GQlTbSB Ô ■ BDT29; 29A BDT29B; 29C T - 3 3 - 0 7 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television am plifier circuits where high peak powers can occur. P-N-P complements are B D T 3 0 series.
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bfa53131
BDT29;
BDT29B;
r-33-(
BDT30
TIP29
BDT29
bS3131
00nbS7
BDT29B
c4060
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Untitled
Abstract: No abstract text available
Text: '- N AMER PHILIPS/DISCRETE 5SE D • 11 bb53=131 003271=] 5 ■ BYV143 SERIES ,[ 7 ? 0 3 -f t SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and
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BYV143
T03-79
T-03-19
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T-33-73
Abstract: BUT21C BUT21B IEC134 BUT21
Text: ESE D N AMER PHILIPS/DI SCRETE • II titiS3T31 0010035 T '' BUT21B BUT21C T - S 3 - I 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a T0-220 envelope with electrically isolated seating plane. Intended for use in converters, inverters, switching regulators, motor control
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titiS3T31
BUT21B
BUT21C
T0-220
O-220AB.
BUT211B
T-33-13
7Z94B37
T-33-73
BUT21C
IEC134
BUT21
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Untitled
Abstract: No abstract text available
Text: P h ilip s C o m p o n e n t s Data sheet status Product specification date of issue November 1990 PMBF107 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FEATURES SYM BOL PARAM ETER • Direct interface to C-M O S, TTL,
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PMBF107
VCB711
003b2G5
BF107
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Untitled
Abstract: No abstract text available
Text: 1^53=131 QDia?t7 7 • DEVELOPMENT DATA II This data sheet contains advance information and specifications are subject to change without notice. BUS131 SERIES N AUER P H I L I P S /DISCRETE T 25E D - 3 3 - / 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in TO-3 envelope, intended for use in very fast
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BUS131
BUS131H
BUS131
bb53131
T-33-13
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324cn
Abstract: TRANSISTOR 24C BUS24C BUS24B
Text: D EV ELO PM EN T DATA • I bbSBTBl & GO 1 0 7 5 = 1 11 T his data sheet contains advance information and m BUS24 SER IES specifications are subject to change w ithout notice. N AMER PHILIPS/DISCRETE E5E D _ r ~ 3 3 -1 5 “ SILICON DIFFUSED POWER TRANSISTORS
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r-33-lS-
BUS24B
bb53T31
BUS24
T-33-15
BUS24B;
BUS24C.
324cn
TRANSISTOR 24C
BUS24C
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BUZ211
Abstract: T-39-13 IEC134 T2113
Text: PowerMOS transistor_BUZ211 N AMER P H IL IP S/ DI SC RE TE ObE D • ^53=131 0014bbö 1_ 7 ■ r - s i - 1 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode PARAMETER SYMBOL field-effect power transistor in a Drain-source voltage
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BUZ211
0014bbÃ
T-21-13
BUZ211
0014b74
T-39-13
IEC134
T2113
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