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    BDT30 Price and Stock

    BeStar Electronics Industry Co Ltd BDT3032H12.8-02

    SPEAKER 32OHM 1.3W 100DB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BDT3032H12.8-02 Tray 5
    • 1 -
    • 10 $7.56
    • 100 $6.17
    • 1000 $6.17
    • 10000 $6.17
    		Buy Now

    Bogen Communications Inc BDT-30A

    Re-Entrant Horn/Loudspeaker; Product Range:- Rohs Compliant: No |Bogen Communications BDT-30A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BDT-30A Bulk 1
    • 1 $210.01
    • 10 $189.56
    • 100 $189.56
    • 1000 $189.56
    • 10000 $189.56
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    Bogen Communications Inc BDT30A

    Loudspeaker, 225 Hz to 14 kHz, 30 W (RMS) (Continuous), 40 W (RMS) (Equalized) | Bogen Communications Inc. BDT30A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS BDT30A Bulk 8 1
    • 1 $210.01
    • 10 $191.11
    • 100 $184.81
    • 1000 $184.81
    • 10000 $184.81
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    BDT30 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT30 Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
    BDT30 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT30 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT30 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT301000 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT301000C Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT301200 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT301200C Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30200 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30200C Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30400 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30400C Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30600 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30600C Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30800 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30800C Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BDT30A Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
    BDT30A Bogen Communications Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Bi-Directional Horn Scan PDF
    BDT30A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT30A Unknown Shortform Transistor PDF Datasheet Short Form PDF

    BDT30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    df transistor

    Abstract: BDT30AF BDT30BF BDT30CF BDT30DF BDT30F
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF


    Original     		PDF BDT30F/AF/BF/CF/DF BDT30F; BDT30AF BDT30BF; -100V BDT30CF -120V BDT30DF BDT29F/AF/BF/CF/DF BDT30F df transistor BDT30AF BDT30BF BDT30CF BDT30DF BDT30F

    PNP 100V 2A

    Abstract: BDT30 BDT30A BDT30B BDT30C
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C


    Original     		PDF BDT30/A/B/C BDT30; BDT30A BDT30B; -100V BDT30C BDT29/A/B/C BDT30 PNP 100V 2A BDT30 BDT30A BDT30B BDT30C

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    BDT29

    Abstract: BDT29A BDT29B BDT29C thermal resistance
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C


    Original     		PDF BDT29/A/B/C BDT29; BDT29A BDT29B; BDT29C BDT30/A/B/C BDT29 BDT29 BDT29A BDT29B BDT29C thermal resistance

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


    Original     		PDF TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100

    Transistor 2sC1060

    Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:


    Original     		PDF BDW46 BDW42/BDW47 220AB BDW42* BDW47* TIP73B TIP74 TIP74A TIP74B Transistor 2sC1060 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59

    MJ11017 equivalent

    Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types


    Original     		PDF MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T

    BU108

    Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A


    Original     		PDF BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE SSE D • 1,1,53=131 D O I U S S a ■ BD T29; 29A BD T29B; 29C r - 33 -07 SILICON EPITAXIAL BASE POWER TRANSISTO RS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur. P-N-P complements are BDT30 series.


    OCR Scan     		PDF BDT30 TIP29 BDT29 bbS3T31 T-33-Q9

    30DF

    Abstract: BDT29BF 30BF BDT29AF BDT29CF BDT29DF BDT29F BDT30AF BDT30CF BDT30F
    Text: • fcifesS3 ‘IBli 0 0 1 ^ 7 3 BDT30F BDT30AF; 30BF BDT30CF; 30DF 3 2SE D N AMER P H I L I P S / D I S C R E T E SILICON EPITAXIAL POWER TRANSISTORS T “" 3 3 - 17 P-N-P silicon power transistor in a SOT-186 envelope with an electrically insulated mounting base,


    OCR Scan     		PDF bbS3T31 BDT30F BDT30AF; BDT30CF; OT-186 BDT29F, BDT29AF, BDT29BF, BDT29CF BDT29DF. 30DF BDT29BF 30BF BDT29AF BDT29DF BDT29F BDT30AF BDT30CF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE- hb53T31 QQllbtn? a • BDT30;A BDT30B;C 2SE D ■ T'33-lf SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur.The TIP 30 series is an equivalent type.


    OCR Scan     		PDF hb53T31 BDT30 BDT30B 33-lf BDT29 BDT30 T-33-19

    vr182

    Abstract: BDT29 BDT30 BDT30A BDT30B
    Text: ri N AMER PH ILI P S/ DI SC RE T E- bbS3ia 1 O d l U b ? a • BDT30;A BDT30B;C SSE D J T-33-/7 SILICON EPITAXIAL BASE POWER TRANSISTORS -P silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur.The T IP 3 0 series is an equivalent type


    OCR Scan     		PDF BDT30 BDT30B T-33-/7 BDT29 T-33-19 7Z82166 vr182 BDT30A

    Untitled

    Abstract: No abstract text available
    Text: • BDT30F BDT30AF; 30BF BDT30CF; 30DF LbS3T31 D011U7B 3 2SE D N AUER PHILIPS/DISCRETE J V SILICON EPITAXIAL POWER TRANSISTORS T " 3 3 - 17 P-N-P silicon power transistor in a SOT-186 envelope with an electrically insulated mounting base, fo r use in audio output stages and fo r general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF BDT30F BDT30AF; BDT30CF; LbS3T31 D011U7B OT-186 BDT29F, BDT29AF, BDT29BF, BDT29CF

    BDT29BF

    Abstract: T-33-07 29af BDT29AF BDT29CF BDT29F BDT30AF BDT30BF BDT30CF BDT30DF
    Text: B i N AMER bbS3T31 O C I l ' ï b S 'i BDT29F BDT29AF; 29BF BDT29CF; 29DF T P H IL IP S /D IS C R E T E aSE D T-33-07 SILICON EPITAXIAL POWER TRANSISTORS N-P-N silicon power transistors in a SOT-186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF bbS3T31 BDT29F BDT29AF; BDT29CF; T-33-07 OT-186 BDT30F, BDT30AF, BDT30BF, BDT30CF BDT29BF T-33-07 29af BDT29AF BDT29CF BDT30AF BDT30BF BDT30DF