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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DEVELOPMENT DATA OLE D ~m LbS3T31 DDmTfc,3 • LTE21025R This data sheat contains advance Information and specifications are subject to change w ithout notice. J V r- 2 1 - 0 *? MICROWAVE LINEAR POWER TRANSISTOR N-P’ N Silicon transistor fo r use in common-emitter class-A linear power amplifiers up to 4,2 GHz.


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    LbS3T31 LTE21025R FO-41B) PDF

    transistor BUZ20

    Abstract: OC106 BUZ20 OC-106 toc106
    Text: P n w p r M O S tr a n s is to r N AMER PHILIPS/DISCRETE _ BUZ20_ ObE D • LbS3T31 ODlMMlb 5 May 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    RTIZ20_ LbS3T31 BUZ20_ 0D14MES T-39-11 transistor BUZ20 OC106 BUZ20 OC-106 toc106 PDF

    Untitled

    Abstract: No abstract text available
    Text: i NPHILIPS/DISCRETE OLE D 86D 0 1 1 2 6 • D T -3 3 -/3 LbS3T31 00133L4 4 BLU52 A V.H.F./U.H.F. PUSH-PULL POW ER TRAN SISTO R N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband applications in the 30 to 400 M H z range.


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    LbS3T31 00133L4 BLU52 PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerMOS transistor_ F AMER PHILIPS/DISCRETE BUZ31 DbE D • LbS3T31 0014444 ~1 ■ rsi-n May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    BUZ31 LbS3T31 T-39-11 BUZ31_ 001444c PDF

    transistor c 6073

    Abstract: DD25DS BFG541 BF 331 TRANSISTORS transistor LC 945 lc 945 p transistor NPN TO 92 transistor abe 438 lc 945 transistor lc 945 p transistor NPN NR 4770 015
    Text: Philips Semiconductors M N LbS3T31 AMER 0025033 TIM PH ILIPS /D ISCR ETE HIAPX Product specification b7E T> NPN 9 GHz wideband transistor FEATURES BFG541 PINNING • High power gain PIN • Low noise figure 1 • High transition frequency 2 base • Gold metallization ensures


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    LbS3T31 E5D33 BFG541 OT223 OT2230 transistor c 6073 DD25DS BFG541 BF 331 TRANSISTORS transistor LC 945 lc 945 p transistor NPN TO 92 transistor abe 438 lc 945 transistor lc 945 p transistor NPN NR 4770 015 PDF

    Untitled

    Abstract: No abstract text available
    Text: • BDT30F BDT30AF; 30BF BDT30CF; 30DF LbS3T31 D011U7B 3 2SE D N AUER PHILIPS/DISCRETE J V SILICON EPITAXIAL POWER TRANSISTORS T " 3 3 - 17 P-N-P silicon power transistor in a SOT-186 envelope with an electrically insulated mounting base, fo r use in audio output stages and fo r general purpose amplifier and high-speed switching applications.


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    BDT30F BDT30AF; BDT30CF; LbS3T31 D011U7B OT-186 BDT29F, BDT29AF, BDT29BF, BDT29CF PDF

    BUK444-400B

    Abstract: No abstract text available
    Text: N AMER PHIL IPS/DISCR ETE LTE D • LbS3T31 QQ30S30 Obi ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a lastic full-pack envelope, he device Is intended for use in


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    GQ30S3D BUK444-400B OT186 PDF

    SOT128

    Abstract: BFQ235A BFQ255A BFQ235 BFQ25 BFQ255
    Text: Philips Semiconductors M LbS3T31 0 Q 3 1 7 45 2m PNP 1 GHz video transistors HAPX ^ Product specification BFQ255; BFQ255A N AMER PHILIPS/DISCRETE FEATURES fc^E ]> PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product


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    LbS3T31 0Q317 BFQ255; BFQ255A T0-202) BFQ235 BFQ235A BFQ255 bb5313I 00317m SOT128 BFQ255A BFQ25 BFQ255 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Components BDV66AF/66BF/66CF/66DF D a ta s h e e t statu s Product specification d a te of issue December 1990 PNP Darlington power transistors PINNING - SOT199 DESCRIPTION PIN 1 2 3 PNP epitaxial base Darlington transistors for audio output stages


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    BDV66AF/66BF/66CF/66DF OT199 BDV67AF/67BF/67CF/67DF. BDV66AF BDV66BF BDV66CF BDV66DF PDF

    Untitled

    Abstract: No abstract text available
    Text: SSE D N AMER P H I L I P S / D I S C R E T E [^53=131 QD2554S 1 • BVV31 SERIES TQ3-/S ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.


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    QD2554S BVV31 E3YV31 T-03-I9 LbS3T31 BYV31 00225S2 T-03-19 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ 33= 131 0 0 2 0 5 2 0 25E D N AMER P H I L I P S / D I S C R E T E S BUK456-50A BUK456-50B PowerMOS transistor T - 3^-13 GENERAL DESCRIPTION SYM BO L Cfl Q > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    BUK456-50A BUK456-50B BUK456 PDF

    CBC 184 transistor

    Abstract: S 354 OPTOCOUPLER CNX35U CNX36U CNX39U
    Text: CNX35U CNX36U CNX39U T O OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r T T L integrated circuits. Features • • • •


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    CNX35U CNX36U CNX39U E90700 0110b 804/VDE 86/kft CNX36U. QD35414 CBC 184 transistor S 354 OPTOCOUPLER CNX35U CNX36U CNX39U PDF

    PROXIMITY inductive ic

    Abstract: metal detectors IC OM2860 OM3105N OM3105P OM3115N OM3115P
    Text: N AUER P H IL IP S / DI SC R ET E b^E D m bb53T31 D03EB01 BAPX Preliminary specification Philips Semiconductors Hybrid integrated circuits for inductive proximity detectors_ OM31Q5P FEATURES DESCRIPTION • Extra small dimensions 3 x 20 mm max.


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    bbS3T31 OM31Q5P PROXIMITY inductive ic metal detectors IC OM2860 OM3105N OM3105P OM3115N OM3115P PDF

    BUZ54

    Abstract: No abstract text available
    Text: P o w e r M O S t r a n s i s t o r _B U Z 5 4 _ N AMER PHILIPS/DISCRETE ^ ObE D • ^53=131 D014717 5 ■ ^ J - 3 1 -1 3 Jul y 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


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    BUZ54 bhS3T31 D014717 JBUZ54 T-39-13 BUZ54 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbSBTBl D015b31 0 ObE D BCW31 B e rn ? . BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.


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    D015b31 BCW31 BCW33 BCW32 bhS3T31 0015b34 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bb53T31 0011553 7 ObE » BYV19 SERIES T-03-17 SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in TO-220AC plastic envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge, and high temperature stability. They are


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    bb53T31 BYV19 T-03-17 O-220AC BYV19â bb53131 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ L!_ _ _ _ _ _ _ _— N AMER PHILIPS/DISCRETE bbSBTBl 0011243 4 • OLE D BYV18 SERIES T-03-17 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward


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    BYV18 T-03-17 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE • ObE D i i_ bb53=131 0014=163 4 ■ LUE2003S LU E2009S -K-1Z-OS MICROWAVE LINEAR POWER TRANSISTORS NPN silicon transistors for use in common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, a self-aligned process entirely ion implanted and gold sandwich


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    LUE2003S E2009S FO-163 PDF

    D1407

    Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
    Text: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance


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    BUZ54_ bfa53131 BUZ54 T-39-13 D1407 BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE T> • t.b53^31 001SQT3 T ■ P K .B 3 2 U U 1 U PKB32003U PKB32005U M A IN T E N A N C E T Y P E S for new design use PTB32001X, PTB32003X, PTB32005X T - 33 - $ T- 33-0*7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 3 GHz.


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    001SQT3 PKB32003U PKB32005U PTB32001X, PTB32003X, PTB32005X) PKB32001U PDF

    diode marking code YF

    Abstract: BF992 bf992 m92
    Text: • bts3T3i oo23bia an ■ apx BF992 N AUER P H I L I P S / D I S C R E T E b7E D SILICO N N-CHANNEL DUAL GATE M O S-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 microminiature envelope with source and substrate interconnected. This M O S -F E T tetrode is intended for use in v.h.f. applications, such as v.h.f.


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    oo23bia BF992 OT143 diode marking code YF BF992 bf992 m92 PDF

    Untitled

    Abstract: No abstract text available
    Text: •I bbS3T31 QQSSMTfl STM « A P X N AMER PHIL IPS /DISCR ETE BSP108 b7E _y \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and intended


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    bbS3T31 BSP108 OT223 bb53c 0D2S501 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ y v _ BDT92 BDT94 BDT96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended fo r use in audio output stages and general amplifier and switching applications. N-P-N complements are BDT91, BDT93 and BDT95.


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    BDT92 BDT94 BDT96 BDT91, BDT93 BDT95. PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE — DbE D ~ • bb53l31 001573b 3 ■ I BF767 _ A_ T -3 I- IS SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope, primarily intended for application as gain con­ trolled amplifier e.g. in v.h.f. and u.h.f. television tuners in thick and thin-film circuits.


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    bb53l31 001573b BF767 LbS3T31 0D1573fl-7 T-31-15 PDF