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    Text: • BDT30F BDT30AF; 30BF BDT30CF; 30DF LbS3T31 D011U7B 3 2SE D N AUER PHILIPS/DISCRETE J V SILICON EPITAXIAL POWER TRANSISTORS T " 3 3 - 17 P-N-P silicon power transistor in a SOT-186 envelope with an electrically insulated mounting base, fo r use in audio output stages and fo r general purpose amplifier and high-speed switching applications.


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    PDF BDT30F BDT30AF; BDT30CF; LbS3T31 D011U7B OT-186 BDT29F, BDT29AF, BDT29BF, BDT29CF