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    S1216 Search Results

    S1216 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    ADS1216Y/2K Texas Instruments 24-Bit Analog-to-Digital Converter 48-TQFP -40 to 85 Visit Texas Instruments Buy
    ADS1216Y/250 Texas Instruments 24-Bit Analog-to-Digital Converter 48-TQFP -40 to 85 Visit Texas Instruments Buy
    SF Impression Pixel

    S1216 Price and Stock

    NXP Semiconductors SL3S1216FUD2-HAPAZ

    SL3S1216FUD2
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    DigiKey SL3S1216FUD2-HAPAZ Tray 387,977 390,687
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    RDI USA RTS1216DSM-TRNL

    SWITCH TACTILE SPST-NO 0.05A 12V
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    DigiKey RTS1216DSM-TRNL Reel 2,998 500
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    Texas Instruments ADS1216Y-250

    IC ADC 24BIT SIGMA-DELTA 48TQFP
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    DigiKey ADS1216Y-250 Cut Tape 1,092 1
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    ADS1216Y-250 Digi-Reel 1,092 1
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    ADS1216Y-250 Reel 750 250
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    Essentra Components 12SWS1216

    SHOULDER WASHER .315 ID .630 OD
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    DigiKey 12SWS1216 Bulk 976 1
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    Mouser Electronics 12SWS1216
    • 1 $0.12
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    Texas Instruments ADS1216Y-2K

    IC ADC 24BIT SIGMA-DELTA 48TQFP
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    DigiKey ADS1216Y-2K Digi-Reel 881 1
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    ADS1216Y-2K Cut Tape 881 1
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    Find more S1216 price and stock on Findchips.com

    S1216 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S1216 Lapp Group CABLE GLAND 6-12MM PG16 POLY Original PDF

    S1216 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ocp sfp

    Abstract: SFP LVDS S1216 TRPN03 amcc CDR IBM "lvds" SCP6802-GL OC12 sfp optic with cdr sfp ocp
    Text: PRODUC T BRIEF 6 S121 S1216 SONET/SDH/ATM OC-3/12 with Clock Data Recovery CDR Features Description • CMOS 0.13 micron technology • Complies with Bellcore and ITU-T specifications for jitter tolerance, jitter transfer, and jitter generation • On-chip high-frequency PLL for clock generation and clock recovery


    Original     		PDF S1216 OC-3/12 OC-12) PB2016 ocp sfp SFP LVDS S1216 TRPN03 amcc CDR IBM "lvds" SCP6802-GL OC12 sfp optic with cdr sfp ocp

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR770DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    62630

    Abstract: No abstract text available
    Text: SPICE Device Model SiA920DJ www.vishay.com Vishay Siliconix Dual N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA920DJ 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 62630

    si8805

    Abstract: si88
    Text: New Product Si8805EDB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A)a 0.068 at VGS = - 4.5 V - 3.1 0.088 at VGS = - 2.5 V - 2.7 0.155 at VGS = - 1.5 V - 2.1 0.290 at VGS = - 1.2 V - 0.5 • • • •


    Original     		PDF Si8805EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8805 si88

    SiA447DJ

    Abstract: No abstract text available
    Text: SPICE Device Model SiA447DJ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the P-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA447DJ 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    qt2025

    Abstract: QT2225 QT2225-1 S4886 QT2025-1 S19262 AMCC S4882 S4882 S19258 S19233
    Text: ɈɩɳȹɝĘɈअౠ Product Selector Guide ȹȤɃɁ ɕȡɖɪɃȯ ɕɬĘɞɞɃɑ ɇĘȿȳɠǗȕȀ Ɇɬȳɠಞซॾ PHY ɇɐȤȹ Product Selector Guide ࠖซþ૟ঝþࡼ೧ȹɈɬĘȸǻ ۛ‫ژ‬ǻȽɪɥĘȷɧɳȟળԽ ɍɃɈɯĘȯ ȳɳɐĘȸȧɳȹ ɈɪɗɫɗɬȤ


    Original     		PDF QT2022/QT2032 QT2025 QT2025-1 QT2045 QT2225 QT2225-1 S1212/S1220 S1213/S1221 S1216/S1217 S19233/S19256 qt2025 QT2225 QT2225-1 S4886 QT2025-1 S19262 AMCC S4882 S4882 S19258 S19233

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQ4937EY www.vishay.com Vishay Siliconix Dual P-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SQ4937EY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N08-8m2P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 75 0.0082 at VGS = 10 V ID (A) 90 d • • • • Qg (Typ) 58 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Material categorization:


    Original     		PDF SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    S12VR Family

    Abstract: No abstract text available
    Text: MC9S12VR-Family Reference Manual S12 Microcontrollers MC9S12VRRMV3 Rev. 3.11 October 10, 2013 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information


    Original     		PDF MC9S12VR-Family MC9S12VRRMV3 CPU12-1 CPU12 CPU12X S12VR Family

    Si8809EDB

    Abstract: si8809
    Text: New Product Si8809EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 a RDS(on) () ID (A) 0.090 at VGS = - 4.5 V - 2.6 0.119 at VGS = - 2.5 V - 2.3 0.155 at VGS = - 1.8 V - 2.0 • • • • • • Qg (Typ.) 6 nC MICRO FOOT


    Original     		PDF Si8809EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8809

    si4554

    Abstract: si4554dy
    Text: SPICE Device Model Si4554DY www.vishay.com Vishay Siliconix N- and P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4554DY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4554

    S1216

    Abstract: No abstract text available
    Text: SPICE Device Model SiS778DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS778DN 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S1216

    Untitled

    Abstract: No abstract text available
    Text: SiS472ADN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 12.8 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS • Notebook CPU Core 3.30 mm


    Original     		PDF SiS472ADN SiS472ADN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUD50N06-09L Vishay Siliconix N-Channel 60 V D-S , 175 °C MOSFET, Logic Level FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0093 at VGS = 10 V 50 0.0122 at VGS = 4.5 V 50 VDS (V) 60 • 175 °C Junction Temperature • TrenchFET Power MOSFET • Material categorization:


    Original     		PDF SUD50N06-09L O-252 SUD50N06-09L-E3 50emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • • • • • Qg (Typ.) 3.2 nC TrenchFET Power MOSFET


    Original     		PDF Si8800EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiS472ADN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.0085 at VGS = 10 V 24 0.0105 at VGS = 4.5 V 24 VDS (V) 30 Qg (Typ.) 12.8 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS • Notebook CPU Core 3.30 mm


    Original     		PDF SiS472ADN SiS472ADN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQ4949EY www.vishay.com Vishay Siliconix Dual P-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SQ4949EY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    crimper CT 3508

    Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
    Text: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.


    Original     		PDF

    DS1216B

    Abstract: No abstract text available
    Text: DS 1216B DALLAS s e m ic o n d u c to r FEATURES _ D S1216B SmartWatch/RAM 1 6K/64K PIN ASSIGNMENT • ■ IE [ 1 2 I 1 4 I 1 5 I 1 V qc 27 WE CO 3 • Converts standard 2K x 8 and 8K x 8 CM OS static RAMs into nonvolatile m em ory 28 ü o > RST CM • Keeps tra ck of hundredths of seconds, seconds, m in­


    OCR Scan     		PDF DS1216B 16K/64K DS1216B

    Untitled

    Abstract: No abstract text available
    Text: D S1216D DALLAS SEMICONDUCTOR SmartWatch/RAM 256K/1M FEATURES PIN ASSIGNMENT S1216D • Converts standard 8K x 8, 32K x 8, 128K x 8, and 512K x 8 CMOS static RAMs into nonvolatile memory 1 •■■ 32 V CC • Embedded lithium energy cell maintains watch infor­


    OCR Scan     		PDF S1216D DS1216D 256K/1M 28-pin 32-pin DS1216D 256K/1M 32-pin, SeetheDS1216B 16/64K

    Untitled

    Abstract: No abstract text available
    Text: ST AN DA R» MICROSYSTEMS Tb D Ë J ñSbMLñt. DD0403b 1 | Your Semicustom Design Partner. When your need is ASIC application specific integrated circuit , the right semicustom partner is extremely important. The success of your company's program is dependent upon


    OCR Scan     		PDF DD0403b

    ELAP CM 72

    Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
    Text: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3


    OCR Scan     		PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    Circuit integrated 8002

    Abstract: S1216 static ram 64K pt dsc sec
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT 10494 FEATURES: DESCRIPTION: • 16,384-words x 4-bit organization • Address access time: 8/10 /1 5 ns (max.) • Low power dissipation: 600m W (typ.) • Fully compatible with ECL logic levels


    OCR Scan     		PDF 384-words T10494 536-bit ECL-10K S12-19 IDT104 C28-2 400mll) S12-20 Circuit integrated 8002 S1216 static ram 64K pt dsc sec