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    SIR770DP Price and Stock

    Vishay Siliconix SIR770DP-T1-GE3

    MOSFET 2N-CH 30V 8A PPAK SO8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR770DP-T1-GE3 Cut Tape 1
    • 1 $1.37
    • 10 $0.924
    • 100 $1.37
    • 1000 $0.4817
    • 10000 $0.4817
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    SIR770DP-T1-GE3 Digi-Reel 1
    • 1 $1.37
    • 10 $0.924
    • 100 $1.37
    • 1000 $0.4817
    • 10000 $0.4817
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    SIR770DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.425
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    New Advantage Corporation SIR770DP-T1-GE3 12,000 1
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    • 10000 $0.5714
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    Vishay Intertechnologies SIR770DP-T1-GE3

    DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY - Tape and Reel (Alt: SIR770DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR770DP-T1-GE3 Reel 21 Weeks 3,000
    • 1 -
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    • 10000 $0.41735
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    Mouser Electronics SIR770DP-T1-GE3 5,359
    • 1 $1.13
    • 10 $0.927
    • 100 $0.666
    • 1000 $0.49
    • 10000 $0.425
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    Newark SIR770DP-T1-GE3 Reel 3,000
    • 1 -
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    • 100 -
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    • 10000 $0.453
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    TTI SIR770DP-T1-GE3 Reel 6,000 3,000
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    • 10000 $0.425
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    TME SIR770DP-T1-GE3 3,000
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    • 10000 $0.7
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    EBV Elektronik SIR770DP-T1-GE3 22 Weeks 3,000
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    Vishay Huntington SIR770DP-T1-GE3

    MOSFET 2N-CH 30V 8A PPAK SO-8 / Mosfet Array 30V 8A 17.8W Surface Mount PowerPAK? SO-8 Dual
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIR770DP-T1-GE3 21,228
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    • 100 $0.6767
    • 1000 $0.4512
    • 10000 $0.4512
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    SIR770DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR770DP-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8A 8SO Original PDF

    SIR770DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR770DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0


    Original     		PDF SiR770DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    12706

    Abstract: No abstract text available
    Text: SiR770DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR770DP AN609, 1179m 16-Sep-10 12706

    Untitled

    Abstract: No abstract text available
    Text: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V (A)a, f 8.0 8.0 8.0 8.0


    Original     		PDF SiR770DP 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0


    Original     		PDF SiR770DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0


    Original     		PDF SiR770DP 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0


    Original     		PDF SiR770DP 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836