S30D30
Abstract: S30D60 IR V 2238
Text: MOSPEC S30D30 Thru S30D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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S30D30
S30D60
S30D30-S30D45
S30D50-S30D60
S30D60
IR V 2238
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S30D40
Abstract: S30D40P s30d40pt S30D45P S30D60P
Text: S30D30PT CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 30 - 60 Volts S30D60PT CURRENT 30 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction
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S30D30PT
S30D60PT
O-247
S30D30PT
S30D45PT
S30D50PT
300uS
100oC
S30D40
S30D40P
s30d40pt
S30D45P
S30D60P
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S30D40C
Abstract: S30D60C S30D45C S30D30C S30D35C S30D50C S30D
Text: S30D30C – S30D60C WTE POWER SEMICONDUCTORS Pb 30A DUAL SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current S High Surge Current Capability Plastic Material has UL Flammability
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S30D30C
S30D60C
MIL-STD-750,
S30D40C
S30D60C
S30D45C
S30D30C
S30D35C
S30D50C
S30D
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S30D60C
Abstract: S30D30CE S30D60CE
Text: MOSPEC S30D30CE Thru S30D60CE Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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S30D30CE
S30D60CE
S30D30CE-45CE
S30D50CE
S30D50CE-60CE
S30D60C
S30D60CE
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S30D30
Abstract: S30D60
Text: MOSPEC S30D30 Thru S30D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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S30D30
S30D60
S30D30-S30D45
S30D50-S30D60
S30D60
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SMD DIODE UF4007
Abstract: 1N5819 SOD-323 1N4007 sod-123 1a7 sot-23 FR107 SOD-123 uf5408 SMD diode Bosch alternator diode bosch alternator 1N5822 SMD 1n5400 smd
Text: SELECTOR GUIDES WTE POWER SEMICONDUCTORS Pb Automotive Rectifiers Superfast Recovery Rectifiers Automotive Rectifiers are intended for use in automobile and high current applications. Won-Top Electronics manufactures a full range of performance characteristics Press Fit Diodes, Button Diodes and
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O-220,
O-220A
BZT52C2V4S
BZT52C51S
OD-323
BZX84C2V4W
BZX84C51W
OT-323
MMBZ5221BW
MMBZ5259BW
SMD DIODE UF4007
1N5819 SOD-323
1N4007 sod-123
1a7 sot-23
FR107 SOD-123
uf5408 SMD diode
Bosch alternator diode
bosch alternator
1N5822 SMD
1n5400 smd
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Ss1015
Abstract: s40d40c
Text: PRODUCT SELECTION GUIDE Power Rectifiers 1 http://www.wontop.com WON-TOP ELECTRONICS 2 Contents Introduction 4 Selector Guides 5 Schottky Rectifiers 8 SMD 8 Axial Lead 14 Power-pack 16 Superfast Rectifiers 20 SMD 20 Axial Lead 22 Power-pack 23 Ultrafast Rectifiers
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Untitled
Abstract: No abstract text available
Text: S30D30C – S30D100C 30A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features Schottky Barrier Chip Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability
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S30D30C
S30D100C
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Untitled
Abstract: No abstract text available
Text: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high
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S30D30
S30D60
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s30d40c
Abstract: S30D45C S30D100C 30D45C S30D60C 30d60c 30D100C S30D45 30D60 30D30
Text: S30D30C – S30D100C WTE POWER SEMICONDUCTORS Pb 30A DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip H Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability
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S30D30C
S30D100C
MIL-STD-750,
s30d40c
S30D45C
S30D100C
30D45C
S30D60C
30d60c
30D100C
S30D45
30D60
30D30
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s30d45c
Abstract: S30D50
Text: S30D30C – S30D100C WTE POWER SEMICONDUCTORS Pb 30A DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip H Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability
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S30D30C
S30D100C
MIL-STD-750,
s30d45c
S30D50
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S30D30
Abstract: S30D45 S30D50 S30D60 s30d3 FK34
Text: Sk MOSPEC S30D30 Thru S30D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geom etry features epitaxial construction with oxide passivation and metal overlay contact.
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S30D30
S30D60
S30D50
S30D45
S30D50
S30D60
s30d3
FK34
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S30D30
Abstract: S30D45 S30D50 S30D60
Text: Sk MOSPEC S30D30 Thru S30D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.
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S30D30
S30D60
S30D50
S30D45
S30D50
S30D60
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