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    S30D Search Results

    S30D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HCTS30DMSR Renesas Electronics Corporation 8-INPUT NAND GATE Visit Renesas Electronics Corporation
    SN74LS30DR Texas Instruments 8-input positive-NAND gates 14-SOIC 0 to 70 Visit Texas Instruments Buy
    SN74HCS30DR Texas Instruments 8-input NAND gate with Schmitt-trigger inputs 14-SOIC -40 to 125 Visit Texas Instruments Buy
    SN74LS30D Texas Instruments 8-input positive-NAND gates 14-SOIC 0 to 70 Visit Texas Instruments Buy
    SN74AS30DR Texas Instruments 8-Input Positive-NAND Gates 14-SOIC 0 to 70 Visit Texas Instruments Buy
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    S30D Price and Stock

    Sensitron Semiconductors STS-30-DIS

    SENSOR DIGITAL 0C-65C 8TDFN
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    DigiKey STS-30-DIS Digi-Reel 8,280 1
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    STS-30-DIS Cut Tape 8,280 1
    • 1 $1.81
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    STS-30-DIS Reel 5,000 2,500
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    Toshiba America Electronic Components TCS30DLU,LF

    MAGNETIC SWITCH OMNIPOLAR UFV
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    DigiKey TCS30DLU,LF Reel 3,000 3,000
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    Avnet Americas TCS30DLU,LF Reel 20 Weeks 3,000
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    Mouser Electronics TCS30DLU,LF
    • 1 $0.42
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    • 100 $0.291
    • 1000 $0.228
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    Maxim Integrated Products MAX6315US30D3-T

    IC RESET CIRCUIT 3.00V SOT143-4
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    DigiKey MAX6315US30D3-T Cut Tape 2,464 1
    • 1 $5.8
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    MAX6315US30D3-T Digi-Reel 2,464 1
    • 1 $5.8
    • 10 $3.9
    • 100 $2.8551
    • 1000 $2.28792
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    Texas Instruments SN74LS30DR

    IC GATE NAND 1CH 8-INP 14SOIC
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    DigiKey SN74LS30DR Digi-Reel 2,245 1
    • 1 $1.02
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    SN74LS30DR Cut Tape 2,245 1
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    Mouser Electronics SN74LS30DR 1,094
    • 1 $1.01
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    Chip 1 Exchange SN74LS30DR 300
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    Hirose Electric Co Ltd DF50S-30DS-1C

    CONN SOCKET HSG 30POS 1.00MM
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    DigiKey DF50S-30DS-1C Bag 638 1
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    Mouser Electronics DF50S-30DS-1C 6,756
    • 1 $0.41
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    • 100 $0.237
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    TME DF50S-30DS-1C 1
    • 1 $0.209
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    Avnet Abacus DF50S-30DS-1C 14 Weeks 1
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    Chip1Stop DF50S-30DS-1C Bulk 100
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    DF50S-30DS-1C 2
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    Find more S30D price and stock on Findchips.com

    S30D Datasheets (83)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S30D100 Mospec 100V schottky barrier rectifier Scan PDF
    S30D100 Mospec SCHOTTKY BARRIER RECTIFIERS(30A,70-100V) Scan PDF
    S30D100A Mospec Schottky barrier rectifiers, 30A, 100V Scan PDF
    S30D100C Mospec Schottky Barrier Rectifier Scan PDF
    S30D100C Mospec Schottky barrier rectifiers, 30A, 100V Scan PDF
    S30D100D Mospec Schottky barrier rectifiers, 30A, 100V Scan PDF
    S30D100D Mospec Schottky Barrier Rectifier Scan PDF
    S30D150 Mospec 30A 150V SCHOTTKY RECTIFIER Original PDF
    S30D150C Mospec Schottky Barrier Rectifiers Original PDF
    S30D150CE Mospec Schottky Barrier Rectifier Original PDF
    S30D150CE Mospec Schottky Barrier Rectifiers Original PDF
    S30D30 Mospec SCHOTTKY BARRIER RECTIFIERS(30A,30-60V) Scan PDF
    S30D30A Mospec Dual schottky barrier rectifier, 30V, 30A Scan PDF
    S30D30A Mospec Schottky Barrier Rectifier Scan PDF
    S30D30C Won-Top Electronics 30A DUAL SCHOTTKY BARRIER RECTIFIER Original PDF
    S30D30C Mospec Dual schottky barrier rectifier, 30V, 30A Scan PDF
    S30D30C Mospec Schottky Barrier Rectifier Scan PDF
    S30D30CE Mospec Schottky Barrier Rectifier Original PDF
    S30D30D Mospec Dual schottky barrier rectifier, 30V, 30A Scan PDF
    S30D30D Mospec Schottky Barrier Rectifier Scan PDF

    S30D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S30D30

    Abstract: S30D60 IR V 2238
    Text: MOSPEC S30D30 Thru S30D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF S30D30 S30D60 S30D30-S30D45 S30D50-S30D60 S30D60 IR V 2238

    Untitled

    Abstract: No abstract text available
    Text: S30D30DJ Diodes Center-Tapped Schottky Doubler I O Max.(A) Output Current30 @Temp (øC) (Test Condition)125# V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage600m @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)


    Original     		PDF S30D30DJ Current30 Voltage30 Voltage600m StyleTO-247

    Untitled

    Abstract: No abstract text available
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package TO-3P Package Weight mg 5600 Product Group Type No. S16D30C – S16D200C S20D30C – S20D200C S30D30C – S30D200C S40D30C – S40D200C S60D30C – S60D200C S80D30C – S80D200C


    Original     		PDF S16D30C S16D200C S20D30C S20D200C S30D30C S30D200C S40D30C S40D200C S60D30C S60D200C

    Untitled

    Abstract: No abstract text available
    Text: S30D30C – S30D100C 30A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability


    Original     		PDF S30D30C S30D100C

    S30D40

    Abstract: S30D40P s30d40pt S30D45P S30D60P
    Text: S30D30PT CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 30 - 60 Volts S30D60PT CURRENT 30 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction


    Original     		PDF S30D30PT S30D60PT O-247 S30D30PT S30D45PT S30D50PT 300uS 100oC S30D40 S30D40P s30d40pt S30D45P S30D60P

    Untitled

    Abstract: No abstract text available
    Text: S30D / A30D, S301 / A301 Vishay Thin Film Dual Value Chip Resistor Isolated FEATURES • 30 Mil Square Size • Resistance Range: 270 to 500K ohms each resistor (Silicon Substrate) 270 to 26K ohms each resistor (Alumina Substrate) • Gold terminations with Tantalum Nitride or Tamelox


    Original     		PDF S3OIDC6801FN 16-Oct-01

    S30D100

    Abstract: S30D70 S30D80 S30D90 S30D8
    Text: MOSPEC S30D70 Thru S30D100 Schottky Barrier Power Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF S30D70 S30D100 S30D80 S30D90 S30D100 S30D80 S30D8

    Untitled

    Abstract: No abstract text available
    Text: S30D30R Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current30 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)


    Original     		PDF S30D30R Current30 Voltage30 Voltage550m

    s30d40c

    Abstract: S30D45C S30D100C 30D45C S30D60C 30d60c 30D100C S30D45 30D60 30D30
    Text: S30D30C – S30D100C WTE POWER SEMICONDUCTORS Pb 30A DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip H Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability


    Original     		PDF S30D30C S30D100C MIL-STD-750, s30d40c S30D45C S30D100C 30D45C S30D60C 30d60c 30D100C S30D45 30D60 30D30

    s30d45c

    Abstract: S30D50
    Text: S30D30C – S30D100C WTE POWER SEMICONDUCTORS Pb 30A DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip H Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability


    Original     		PDF S30D30C S30D100C MIL-STD-750, s30d45c S30D50

    A30D

    Abstract: S30I
    Text: S30D / A30D, S301 / A301 Vishay Thin Film Dual Value Chip Resistor Isolated FEATURES • 30 Mil Square Size • Resistance Range: 270 to 500K ohms each resistor (Silicon Substrate) 270 to 26K ohms each resistor (Alumina Substrate) • Gold terminations with Tantalum Nitride or Tamelox


    Original     		PDF S3OIDC6801FN 27-Apr-01 A30D S30I

    S30D40C

    Abstract: S30D60C S30D45C S30D30C S30D35C S30D50C S30D
    Text: S30D30C – S30D60C WTE POWER SEMICONDUCTORS Pb 30A DUAL SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current S High Surge Current Capability Plastic Material has UL Flammability


    Original     		PDF S30D30C S30D60C MIL-STD-750, S30D40C S30D60C S30D45C S30D30C S30D35C S30D50C S30D

    S30D60C

    Abstract: S30D30CE S30D60CE
    Text: MOSPEC S30D30CE Thru S30D60CE Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF S30D30CE S30D60CE S30D30CE-45CE S30D50CE S30D50CE-60CE S30D60C S30D60CE

    Untitled

    Abstract: No abstract text available
    Text: S30D30D Diodes Center-Tapped Schottky Doubler I O Max.(A) Output Current30 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)


    Original     		PDF S30D30D Current30 Voltage30 Voltage550m

    Untitled

    Abstract: No abstract text available
    Text: S30D30A Diodes Center-Tapped Negative CA Schottky Rectifier I O Max.(A) Output Current30 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)


    Original     		PDF S30D30A Current30 Voltage30 Voltage550m

    S30D30

    Abstract: S30D60
    Text: MOSPEC S30D30 Thru S30D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF S30D30 S30D60 S30D30-S30D45 S30D50-S30D60 S30D60

    Untitled

    Abstract: No abstract text available
    Text: P R E C I S I O N T H I N F I L M T E C H N O L O G Dual Value Chip Resistor S30D/A30D and S30I/A30I Series Isolated FEATURES • 30 Mil Square Size • Resistance Range: (Silicon Substrate) 270 to 500K ohms each resistor (Alumina Substrate) 270 to 26K ohms each resistor


    Original     		PDF S30D/A30D S30I/A30I Tra00 S3OIDC6801FN

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER 05 DF|MfiSS4S2 0 0 0 7 t . 3 Data Sheet No. PD-3.130 IIO R I in te r n a tio n a l r e c t if ie r S30D & S30DH SERIES 1200-600 VOLTS RANGE 440 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs VOLTAGE RATINGS VOLTAGE


    OCR Scan     		PDF S30DH O-108 SS452 0007b73 T-25-19 T0-209A O-118)

    Untitled

    Abstract: No abstract text available
    Text: I«R Data Sheet No. PD-3.131 in t e r n a t io n a l r e c t if ie r INTERNATIONAL RECTIFIER D5 dF | 40SS45E D0D7bh3 E |~ S30D SERIES 1600-1000 VOLTS RANGE 430 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs O VOLTAGE RATINGS VOLTAGE COOE


    OCR Scan     		PDF 40SS45E T0-209AE T0-209AD O-10BJ) 0007LL T-25-19 T0-209AE O-118)

    s300h

    Abstract: No abstract text available
    Text: I N T E R N A T IONAL RECTIFIER I« R | ~D5 DÌf| 4fl554SE 00D7b7S T 1 ~ T ~ /? Jata Sheet No. PD-3.129 in t e r n a t io n a l. r e c t if ie r S30D & S30DH SERIES 800-200 VOLTS RANGE 470 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs


    OCR Scan     		PDF 4fl554SE 00D7b7S S30DH PARAM30 T0-209AE O-118] T0-209AD -108J) T-25-19 s300h

    transistor 467 sgs

    Abstract: 0809 al diode sg 5 ts sgs30da070
    Text: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE


    OCR Scan     		PDF O-240) PC-029« transistor 467 sgs 0809 al diode sg 5 ts sgs30da070

    S30D100

    Abstract: S30D70 S30D80 S30D90
    Text: EL MOSPEC S30P70 Thru S30D100 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky B arrier principle with a M olybdenum barrier metal. These state-of-the-art geom etry features epitaxial construction with oxide passivation and metal overlay contact.


    OCR Scan     		PDF S30D70 S30D100 S30D90 S30D100 S30D80 S30D90

    S30D14B0

    Abstract: ST110C12C 14350 ST180C12C s30d12b0 S30DG2A0 st110c04 S34DG6A0 S34D16A0 ST200C
    Text: Thyristors International S R e c tifie r Phase Control Type 445-770 Amps RMS Part Number •T AV @ Tc Vr r m Vo rm (V) S30DG2A0 S30DG2B0 S30DG4A0 S30DG4B0 S30DG6A0 S30DG6B0 S30DG8A0 S30DG8BÛ S30D10A0 S30D10B0 S30D12A0 S30D12B0 S30D14A0 S30D14B0 S30D16A0


    OCR Scan     		PDF S30DG2A0 S30DG2B0 S30DG4A0 S30DG4B0 S30DG6A0 S30DG6B0 S30DG8A0 S30DG8BÛ S30D10A0 S30D10B0 S30D14B0 ST110C12C 14350 ST180C12C s30d12b0 st110c04 S34DG6A0 S34D16A0 ST200C

    S30DG4B0

    Abstract: ST180C12C ST110C04C ST110 ST200C12C S30DG2A0 S30DG2B0 S30DG4A0 S30DG8A0 S30DG8B0
    Text: INTERNATIONAL RECTIFIER HÔS5452 001G705 EbE D Phase Control Thyristors 445 TO 770 AMPS RMS Part V number V RRM ’•¡• RMS ’t (AV) T C S30DG2A0 S30DG2BQ S30DG4A0 S30DG4B0 S30DG6A& S3QDG6B0 S30DG8A0 S30DG8B0 S30D1OAO S30D10BQ S30D12A0 S30D12B0 S30D14A0


    OCR Scan     		PDF S5452 001G705 S30DG2A0 S30DG2B0 S30DG4A0 S30DG4B0 S30DG6A& S30DG680 S30DG8A0 S30DG8B0 ST180C12C ST110C04C ST110 ST200C12C