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    S3R31 Search Results

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    S3R31 Price and Stock

    CUI Inc VBD20-D24-S3R3-1

    DC DC CONVERTER 20W
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    DigiKey VBD20-D24-S3R3-1 Box
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    CUI Inc VBD20-D48-S3R3-1

    DC DC CONVERTER 20W
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    DigiKey VBD20-D48-S3R3-1 Box
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    Abracon Corporation AOTA-B201610S3R3-101-T

    FIXED IND 3.3UH 2.4 A 140MOHM
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    DigiKey AOTA-B201610S3R3-101-T Cut Tape 1
    • 1 $0.27
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    AOTA-B201610S3R3-101-T Digi-Reel 1
    • 1 $0.27
    • 10 $0.207
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    AOTA-B201610S3R3-101-T Reel 3,000
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    Mouser Electronics AOTA-B201610S3R3-101-T
    • 1 $0.27
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    Newark AOTA-B201610S3R3-101-T Cut Tape 5
    • 1 $0.473
    • 10 $0.415
    • 100 $0.254
    • 1000 $0.148
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    New Advantage Corporation AOTA-B201610S3R3-101-T 6,000 1
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    Vishay Intertechnologies EB43-S3R3140W

    EB43-3R31SGFW T02 - Bulk (Alt: EB43-S3R3140W)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas EB43-S3R3140W Bulk 40 Weeks 26
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    Calex Mfg Co Inc 48S3R3.1200SMT

    Isolated DC/DC Converters - SMD
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    Sager 48S3R3.1200SMT
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    S3R31 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BA682

    Abstract: BA683
    Text: blE D • bfc>S3R31 DQEblVb Dfifi N AMER PH ILI PS/DISCRETE IAPX BA682 BA683 BAND-SWITCHING DIODES FOR SURFACE MOUNTING Switching diodes in a SOD-8 O envelope, intended fo r band switching in v.h.f. television tuners. A special feature o f these diodes ¡s their low capacitance.


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    S3R31 BA682 BA683 BA683 PDF

    transistor bt 808

    Abstract: transistor 1548 b
    Text: b b S a ^ l 00250bb 3b0 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b?E T> BFQ67 PINNING • High power gain PIN • Low noise figure 1 base DESCRIPTION • High transition frequency 2


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    00250bb BFQ67 transistor bt 808 transistor 1548 b PDF

    PMBT2369

    Abstract: No abstract text available
    Text: • bbS3T3i oossasi n? « N APIER PHILIPS/DISCRETE apx PMBT2222 PMBT2222A b?E D r v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended fo r switching and linear appli­ cations in thick and thin-film circuits.


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    PMBT2222 PMBT2222A PMBT2369 PDF

    Untitled

    Abstract: No abstract text available
    Text: BD226 BD228 BD230 _ J V SILICON PLANAR EPITAXIAL POWER TRANSISTORS G eneral purpose n -p -n tra n s is to rs in a SOT-32 plastic envelope especially recommended for television c irc u its. T h eir complements a re BD227, BD229 and BD231.


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    BD226 BD228 BD230 OT-32 BD227, BD229 BD231. BD228 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PBYR20100CT series Schottky Barrier rectifier diodes Product specification File under Discrete Semiconductors, SC02 August 1992 Philips Semiconductors PHILIPS ^ 53^31 □ □ 3 2 cJcj a 23s P h ilip s Sem icon du cto r? P ro d u c ts


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    PBYR20100CT S3R31 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E D • bb53R31 002flbi1fl S05 M A P X Philips Semiconductors Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended


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    bb53R31 002flbi1fl BU2522AF PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E bTE T> bb53T31 02tUb4 033 BLV95 APX U.H.F. POWER TRANSISTOR N.P.N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters for the 900 MHz communication band. Features • multi base structure and emitter-ballasting resistors for an optimum temperature profile


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    bb53T31 02tUb4 BLV95 OT-171) tbS3T31 PDF

    Untitled

    Abstract: No abstract text available
    Text: PhilipsSemiconductors ^ bb53T31 0031716 213 M APX^^^^Productspecificatlon NPN 1 GHz video transistors ^ BFQ235; BFQ235A N AMER PHILIPS/DISCRETE b'lE D — • PINNING FEATURES • High breakdown voltages DESCRIPTION PIN 1 emitter • High gain bandwidth product


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    bb53T31 BFQ235; BFQ235A OT128B BFQ255 BFQ255A MBB891 D031722 PDF

    S46 SMD

    Abstract: No abstract text available
    Text: Philips Components BDS 944/946/948 Datasheet status P ro d u ct sp ecification date of issue April 1991 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PNP silicon epitaxial base transistors in a m iniature SMD envelope SOT223 intended fo r general


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    OT223 OT223) BDS943/945/947. BDS944 BDS946 BDS948 bb53T31 BDS944/946/948 DD34b43 S46 SMD PDF

    Untitled

    Abstract: No abstract text available
    Text: bRE J> N A PIER P H I L I P S / D I S C R E T E bfc.S3R31 0 Q 3 2 2 S 6 Philips Semiconductors 2 fl 2 H A P X Preliminary specification Triple video output amplifier FEATURES CR5978 QUICK REFERENCE DATA • Three amplifiers in one package • DC coupled video amplifier for


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    S3R31 CR5978 CR5978/70; CR5978R/70 CR5978/90; CR5978R/90 PDF

    TOP 948

    Abstract: BDS944 BDS946 BDS948 IEC134 MS80 T 948
    Text: Philips Components BDS944/946/948 Datasheet status Product specification date of issue April 1991 PNP Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


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    BDS944/946/948 OT223) BDS943/945/947. OT223 BDS944 BDS946 BDS948 TOP 948 IEC134 MS80 T 948 PDF