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    BFQ67 Search Results

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    BFQ67 Price and Stock

    NXP Semiconductors BFQ67,215

    RF TRANS NPN 10V 8GHZ TO236AB
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    EBV Elektronik BFQ67,215 54 Weeks 3,000
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    NXP Semiconductors BFQ67W,135

    RF TRANS NPN 10V 8GHZ SOT323-3
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    NXP Semiconductors BFQ67W,115

    RF TRANS NPN 10V 8GHZ SOT323-3
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    Rochester Electronics BFQ67W,115 389,325 1
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    Rochester Electronics LLC BFQ67W,115

    RF SMALL SIGNAL TRANSISTOR
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    Philips Semiconductors BFQ67W

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    Bristol Electronics BFQ67W 20,985 11
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    BFQ67W 2,802
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    Quest Components BFQ67W 16,788
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    BFQ67 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFQ67 Philips Semiconductors NPN 8 GHz Wideband Transistor Original PDF
    BFQ67 Philips Semiconductors NPN 8 GHz wideband transistor Original PDF
    BFQ67 Philips Semiconductors NPN 8 GHz Wideband Transistor Original PDF
    BFQ67 Vishay Semiconductors Silicon NPN Planar RF Transistor Original PDF
    BFQ67 Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFQ67 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFQ67 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BFQ67,215 NXP Semiconductors NPN 8 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 8 GHz; Frequency: 2.7 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; IC: 50 mA; Noise figure: 2.7@f21.7@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 10 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BFQ67F Vishay Siliconix Transistors, RF & AF Original PDF
    BFQ67-GS08 Vishay TRANS GP BJT NPN 10V 0.05A Original PDF
    BFQ67R Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    BFQ67R Vishay Semiconductors Silicon NPN Planar RF Transistor Original PDF
    BFQ67T Philips Semiconductors NPN 8 GHz Wideband Transistor Original PDF
    BFQ67T Philips Semiconductors NPN 8 GHz wideband transistor Scan PDF
    BFQ67T/R NXP Semiconductors TRANS GP BJT NPN 10V 0.05A Original PDF
    BFQ67TR Philips Semiconductors NPN 8 GHz wideband transistor Original PDF
    BFQ67T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BFQ67W NXP Semiconductors BFQ67W - NPN 8 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 8 GHz; Frequency: 2.7 MHz; GUM @ f1: 13 dB; GUM @ f2: 8 dB; IC: 50 mA; Noise figure: 2.7@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 10 V Original PDF
    BFQ67W Philips Semiconductors NPN 8 GHz Wideband Transistor Original PDF
    BFQ67W Philips Semiconductors NPN 8 GHz wideband transistor Original PDF

    BFQ67 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sot23 marking V2p

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 1998 Aug 27 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION


    Original
    M3D088 BFQ67 BFQ67 MSB003 R77/04/pp12 771-BFQ67-T/R sot23 marking V2p PDF

    smd transistor marking ZS

    Abstract: BFQ67F ic MA 2831
    Text: BFQ67F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original
    BFQ67F OT-490 OT-490 D-74025 24-Aug-04 smd transistor marking ZS BFQ67F ic MA 2831 PDF

    BFQ67W

    Abstract: 15.931 BFQ67 BFQ67R transistor marking WV2
    Text: BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.


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    BFQ67/BFQ67R/BFQ67W BFQ67 BFQ67R BFQ67W D-74025 20-Jan-99 15.931 transistor marking WV2 PDF

    MARKING SMD npn TRANSISTOR 690

    Abstract: smd transistor E3 BFQ6 transistor smd .PB v1
    Text: BFQ67F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original
    BFQ67F OT-490 D-74025 28-Apr-05 MARKING SMD npn TRANSISTOR 690 smd transistor E3 BFQ6 transistor smd .PB v1 PDF

    SOT-23 AAAA

    Abstract: 276-116 BFQ67W BFQ67 BFQ67R SOT-23 marking 717 SOT-23 AAAA transistor
    Text: BFQ67/BFQ67R/BFQ67W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated


    Original
    BFQ67/BFQ67R/BFQ67W BFQ67 BFQ67R BFQ67W D-74025 20-Jan-99 SOT-23 AAAA 276-116 SOT-23 marking 717 SOT-23 AAAA transistor PDF

    BFQ67

    Abstract: temic 0675
    Text: BFQ67 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.


    Original
    BFQ67 D-74025 17-Apr-96 BFQ67 temic 0675 PDF

    MARKING SMD npn TRANSISTOR 690

    Abstract: vishay rf output power transistor
    Text: Not for new design, this product will be obsoleted soon BFQ67F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original
    BFQ67F OT-490 18-Jul-08 MARKING SMD npn TRANSISTOR 690 vishay rf output power transistor PDF

    BFQ67W

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFQ67W NPN 8 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES BFQ67W PINNING • High power gain PIN  Low noise figure DESCRIPTION Code: V2


    Original
    BFQ67W OT323 MBC870 OT323 OT323. R77/03/pp12 BFQ67W PDF

    transistor MAR 825

    Abstract: MAR 641 TRANSISTOR transistor MAR 543 MAR 618 transistor BFQ67 temic 0675 transistor MAR 819 marking v2 sot 1301
    Text: BFQ67 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.


    Original
    BFQ67 D-74025 24-Mar-97 transistor MAR 825 MAR 641 TRANSISTOR transistor MAR 543 MAR 618 transistor BFQ67 temic 0675 transistor MAR 819 marking v2 sot 1301 PDF

    BFQ67W

    Abstract: MRC043 mrc047 MRC039
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ67W NPN 8 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES BFQ67W PINNING • High power gain PIN  Low noise figure DESCRIPTION


    Original
    BFQ67W OT323 MBC870 OT323 OT323. R77/03/pp12 BFQ67W MRC043 mrc047 MRC039 PDF

    transistor s11 s12 s21 s22

    Abstract: MRC039
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Preliminary specification 1999 Oct 18 Philips Semiconductors Preliminary specification NPN 8 GHz wideband transistor BFQ67T PINNING FEATURES • High power gain PIN • Low noise figure


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    M3D173 BFQ67T OT416 budgetnum/ed/pp11 transistor s11 s12 s21 s22 MRC039 PDF

    smd transistor marking zs

    Abstract: BFQ67F MARKING SMD npn TRANSISTOR 690
    Text: BFQ67F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original
    BFQ67F OT490 OT490 168es D-74025 23-Sep-02 smd transistor marking zs BFQ67F MARKING SMD npn TRANSISTOR 690 PDF

    BFQ67

    Abstract: transistor ZO 103 MA MSB003 RF TRANSISTOR 2.5 GHZ s parameter MRA610 transistor DATA REFERENCE handbook
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ67 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES BFQ67 PINNING • High power gain


    Original
    BFQ67 MSB003 BFQ67 transistor ZO 103 MA MSB003 RF TRANSISTOR 2.5 GHZ s parameter MRA610 transistor DATA REFERENCE handbook PDF

    transistor MAR 825

    Abstract: mar 806 aeg t 388 1666 transistor 1 928 404 655 AEG TELEFUNKEN aeg d 188 s 1000 HP-65
    Text: Tem ic BFQ67 S e m U o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low-noise. small-signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain


    OCR Scan
    BFQ67 24-Mar-97 transistor MAR 825 mar 806 aeg t 388 1666 transistor 1 928 404 655 AEG TELEFUNKEN aeg d 188 s 1000 HP-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability


    OCR Scan
    bb53T31 BFQ67W OT323 UBC870 OT323. OT323 PDF

    transistor bt 808

    Abstract: transistor 1548 b
    Text: b b S a ^ l 00250bb 3b0 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b?E T> BFQ67 PINNING • High power gain PIN • Low noise figure 1 base DESCRIPTION • High transition frequency 2


    OCR Scan
    00250bb BFQ67 transistor bt 808 transistor 1548 b PDF

    LB 1639 1 L0

    Abstract: Transistor MJE 5331 MT 7930 UBB301 transistor BF 697 bf 0252 MRC039 Philips FA 291 BFQ67W DDZ5068
    Text: ok ,i . Philips Sem iconductors • bb53T31 D025DB4 36b « A P X AflER P H I L I P S / D I S C R E T E Product specification b?E D NPN 8 GHz wideband transistor FEATURES • BFQ67W PIN CONFIGURATION PINNING PIN High power gain DESCRIPTION • Low noise figure


    OCR Scan
    bb53T31 D025DB4 BFQ67W OT323 MBCS70 OT323. LB 1639 1 L0 Transistor MJE 5331 MT 7930 UBB301 transistor BF 697 bf 0252 MRC039 Philips FA 291 BFQ67W DDZ5068 PDF

    transistor t07

    Abstract: mar-06 transistor "MARKING CODE V2" "marking Code" V2 marking code V2 MRC050 BFQ67T SC-75 transistor 15 GHz transistor 20 dB 14 ghz
    Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain NPN transistor in a plastic SOT416 SC-75 package. • Low noise figure • High transition frequency • Gold metallization ensures


    OCR Scan
    BFQ67T OT416 SC-75) OT416. 1BFQ67T MRC050 7110fl5b transistor t07 mar-06 transistor "MARKING CODE V2" "marking Code" V2 marking code V2 BFQ67T SC-75 transistor 15 GHz transistor 20 dB 14 ghz PDF

    transistor MAR 825

    Abstract: transistor MAR 819 MAR 641 TRANSISTOR
    Text: Temic BFQ67 Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. M Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.


    OCR Scan
    BFQ67 24-Mar-97 transistor MAR 825 transistor MAR 819 MAR 641 TRANSISTOR PDF

    kl SN 102 94-0

    Abstract: WV2 marking marking WV2 Q 371 Transistor BFQ67WI
    Text: TEMIC BFQ67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain


    OCR Scan
    BFQ67W 20ges D-74025 07-Nov-97 kl SN 102 94-0 WV2 marking marking WV2 Q 371 Transistor BFQ67WI PDF

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 GD3220b TAM Philips Semiconductors • AP y Product specification NPN 8 GHz wideband transistor crystal ^ N X3A-BFQ65 AMER PHILIPS/DISCRETE DESCRIPTION b=1E D MECHANICAL DATA NPN crystal used in BFQ65 SOT37 , BFG67 (SOT143) and BFQ67 (SOT23). Crystals are supplied as whole


    OCR Scan
    bb53T31 GD3220b X3A-BFQ65 BFQ65 BFG67 OT143) BFQ67 PDF

    MSB003

    Abstract: sot23 marking V2p BFQ67
    Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION • High power gain Silicon NPN wideband transistor in a plastic SOT23 package. • Low noise figure 3 • High transition frequency • Gold metallization ensures


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    BFQ67 MSB003 sot23 marking V2p PDF

    4000 npn

    Abstract: 122e
    Text: 56 RF/Microwave Devices RF Wideband Transistors Type No. BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 BFQ149 BFQ270 BFQ621 BFQ741 BFR53 BFR90 BFR90A BFR91 BFR91A BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW BFR94A BFR95 BFR96 BFR96S BFR106


    OCR Scan
    BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 4000 npn 122e PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Sem iconductors 1998 Aug 27 PHILIPS Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION


    OCR Scan
    BFQ67 MSB003 125104/00/04/pp12 PDF