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    BFQ6 Search Results

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    BFQ6 Price and Stock

    Rochester Electronics LLC BFQ67W,115

    RF SMALL SIGNAL TRANSISTOR
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    DigiKey BFQ67W,115 Bulk 389,325 3,328
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    NXP Semiconductors BFQ67,215

    RF TRANS NPN 10V 8GHZ TO236AB
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    EBV Elektronik BFQ67,215 54 Weeks 3,000
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    NXP Semiconductors BFQ67W,115

    RF TRANS NPN 10V 8GHZ SOT323-3
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    Rochester Electronics BFQ67W,115 389,325 1
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    EBV Elektronik BFQ67W,115 54 Weeks 3,000
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    NXP Semiconductors BFQ67W,135

    RF TRANS NPN 10V 8GHZ SOT323-3
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    Nexperia BFQ67W,115

    Bipolar - RF Transistor, NPN, 10 V, 8 GHz, 300 mW, 50 mA, SOT-323 - Tape and Reel (Alt: BFQ67W,115)
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    Avnet Americas BFQ67W,115 Reel 4 Weeks 4,007
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    BFQ6 Datasheets (78)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BFQ60 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFQ60 Siemens LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz Scan PDF
    BFQ61 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFQ62 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFQ620K5 Vishay Resistor: Carbon Film: 620K Original PDF
    BFQ620M5 Vishay Resistor: Carbon Film: 620M Original PDF
    BFQ621 Philips Semiconductors NPN 7 GHz Wideband Transistor Original PDF
    BFQ621 Philips Semiconductors NPN 8 GHz Wideband Transistor Original PDF
    BFQ621 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BFQ621 Philips Semiconductors NPN 7 GHz wideband transistor Scan PDF
    BFQ62K5 Vishay Resistor: Carbon Film: 62K Original PDF
    BFQ62M5 Vishay Resistor: Carbon Film: 62M Original PDF
    BFQ63 Philips Semiconductors NPN 5 GHz Wideband Transistor Original PDF
    BFQ63 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BFQ63 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFQ63 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFQ63 SGS-Thomson Class A Low Noise Transistors for Small Signal Applications Scan PDF
    BFQ63 Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan PDF
    BFQ63 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    BFQ64 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    BFQ6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot23 marking V2p

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 1998 Aug 27 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION


    Original
    PDF M3D088 BFQ67 BFQ67 MSB003 R77/04/pp12 771-BFQ67-T/R sot23 marking V2p

    Philips FA 291

    Abstract: Microwave PIN diode spice BFQ621 DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ621 NPN 7 GHz wideband transistor Product specification Supersedes data of 1995 Apr 11 File under Discrete Semiconductors, SC14 1995 Sep 26 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621


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    PDF BFQ621 OT172A2 Philips FA 291 Microwave PIN diode spice BFQ621 DIN45004B

    smd transistor marking ZS

    Abstract: BFQ67F ic MA 2831
    Text: BFQ67F VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


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    PDF BFQ67F OT-490 OT-490 D-74025 24-Aug-04 smd transistor marking ZS BFQ67F ic MA 2831

    BFQ67W

    Abstract: 15.931 BFQ67 BFQ67R transistor marking WV2
    Text: BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.


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    PDF BFQ67/BFQ67R/BFQ67W BFQ67 BFQ67R BFQ67W D-74025 20-Jan-99 15.931 transistor marking WV2

    BFQ 540 application

    Abstract: BFQ65 BFQ 540
    Text: BFQ65 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence


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    PDF BFQ65 D-74025 17-Apr-96 BFQ 540 application BFQ65 BFQ 540

    MARKING SMD npn TRANSISTOR 690

    Abstract: smd transistor E3 BFQ6 transistor smd .PB v1
    Text: BFQ67F Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original
    PDF BFQ67F OT-490 D-74025 28-Apr-05 MARKING SMD npn TRANSISTOR 690 smd transistor E3 BFQ6 transistor smd .PB v1

    transistor MAR 825

    Abstract: mar 806 aeg t 388 1666 transistor 1 928 404 655 AEG TELEFUNKEN aeg d 188 s 1000 HP-65
    Text: Tem ic BFQ67 S e m U o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low-noise. small-signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain


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    PDF BFQ67 24-Mar-97 transistor MAR 825 mar 806 aeg t 388 1666 transistor 1 928 404 655 AEG TELEFUNKEN aeg d 188 s 1000 HP-65

    BFQ32M

    Abstract: of bfq63 BFQ63 transistor 643
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERN A T I O N A L DESCRIPTION BFQ63 SbE D • 711Gô2b G04S4Ô4 SDD ■ PHIN PINNING NPN transistor in a 10-12 metal envelope with insulated electrodes and a shield lead connected to the


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    PDF BFQ63 711002b BFQ32M. 7110fl2b 0D454fl7 BFQ32M of bfq63 BFQ63 transistor 643

    BFQ58

    Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450
    Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S


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    PDF 6535b05 00M5Mgfl BF199 O-92d BF599 BF240 BF840 BF241 BFQ58 BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450

    Untitled

    Abstract: No abstract text available
    Text: Y S55y BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated


    OCR Scan
    PDF BFQ67/BFQ67R/BFQ67W BFQ67 BFQ67R BFQ67W 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability


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    PDF bb53T31 BFQ67W OT323 UBC870 OT323. OT323

    Untitled

    Abstract: No abstract text available
    Text: H Philips S em iconductors lati53T31 00315T5 TQS H A P X ^Productspecification NPN 5 GHz wideband transistor BFQ63 N AUER PHIL IPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the


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    PDF lati53T31 00315T5 BFQ63 BFQ32M. MEA302 MBB773

    transistor bt 808

    Abstract: transistor 1548 b
    Text: b b S a ^ l 00250bb 3b0 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b?E T> BFQ67 PINNING • High power gain PIN • Low noise figure 1 base DESCRIPTION • High transition frequency 2


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    PDF 00250bb BFQ67 transistor bt 808 transistor 1548 b

    Untitled

    Abstract: No abstract text available
    Text: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.


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    PDF bhS3T31 0031b53 BFQ68 OT122A

    BFQ63

    Abstract: BFQ32M of bfq63
    Text: Philips Semiconductors bibi.53,:] 3 1 G G B IS T S TGS HAPX Product specification NPN 5 GHz wideband transistor BFQ63 N AMER PHILIPS/DISCRETE DESCRIPTION b'IE D PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the


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    PDF bbS3T31 BFQ63 BFQ32M. D0315T8 BFQ63 ls12l2 BFQ32M of bfq63

    transistor t07

    Abstract: mar-06 transistor "MARKING CODE V2" "marking Code" V2 marking code V2 MRC050 BFQ67T SC-75 transistor 15 GHz transistor 20 dB 14 ghz
    Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain NPN transistor in a plastic SOT416 SC-75 package. • Low noise figure • High transition frequency • Gold metallization ensures


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    PDF BFQ67T OT416 SC-75) OT416. 1BFQ67T MRC050 7110fl5b transistor t07 mar-06 transistor "MARKING CODE V2" "marking Code" V2 marking code V2 BFQ67T SC-75 transistor 15 GHz transistor 20 dB 14 ghz

    D02fc

    Abstract: transistor 7806 2454 transistor 72A2 BFQ621 DIN45004B Philips FA 145 BFQ6
    Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 FEATURES DESCRIPTION • High power gain Silicon NPN transistor in a 4-lead dual-emitter SOT 172A2 package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application


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    PDF BFQ621 D02fc transistor 7806 2454 transistor 72A2 BFQ621 DIN45004B Philips FA 145 BFQ6

    BFQ64

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BFQ64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. Type Marking Ordering code tape and reel Package BFQ64 FC Q 62702 - F 1 061 SOT-89 Maximum Ratings


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    PDF BFQ64 OT-89 BFQ64

    transistor MAR 825

    Abstract: transistor MAR 819 MAR 641 TRANSISTOR
    Text: Temic BFQ67 Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. M Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.


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    PDF BFQ67 24-Mar-97 transistor MAR 825 transistor MAR 819 MAR 641 TRANSISTOR

    kl SN 102 94-0

    Abstract: WV2 marking marking WV2 Q 371 Transistor BFQ67WI
    Text: TEMIC BFQ67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain


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    PDF BFQ67W 20ges D-74025 07-Nov-97 kl SN 102 94-0 WV2 marking marking WV2 Q 371 Transistor BFQ67WI

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 GD3220b TAM Philips Semiconductors • AP y Product specification NPN 8 GHz wideband transistor crystal ^ N X3A-BFQ65 AMER PHILIPS/DISCRETE DESCRIPTION b=1E D MECHANICAL DATA NPN crystal used in BFQ65 SOT37 , BFG67 (SOT143) and BFQ67 (SOT23). Crystals are supplied as whole


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    PDF bb53T31 GD3220b X3A-BFQ65 BFQ65 BFG67 OT143) BFQ67

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors ^ 53^ 31 0031bDb b lO M APX Product specification NPN 8 GHz wideband transistor ^ BFQ66 N DESCRIPTION AUER PHILIPS/DISCRETE b'lE » PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SOT173 and


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    PDF 0031bDb BFQ66 OT173 OT173X

    MSB003

    Abstract: sot23 marking V2p BFQ67
    Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION • High power gain Silicon NPN wideband transistor in a plastic SOT23 package. • Low noise figure 3 • High transition frequency • Gold metallization ensures


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    PDF BFQ67 MSB003 sot23 marking V2p

    11.5 - 15.5 GHZ

    Abstract: No abstract text available
    Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Wideband transistors RF & MICROWAVE SEMICONDUCTORS & MODULES SECOND-GENERATION WIDEBAND TRANSISTORS fT up to 6 GHz continued polarity type number BFQ63 BFQ68 BFQ136 BFQ149 BFR92 BFR92A


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    PDF BFQ63 BFQ68 BFQ136 BFQ149 BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW 11.5 - 15.5 GHZ