SBT5401
Abstract: SBT5551
Text: SBT5551 Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401
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SBT5551
SBT5401
OT-23
KST-2012-000
SBT5401
SBT5551
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SBT5551F
Abstract: Transistor KST-2097-000 transistor 2097 SBT5401F
Text: SBT5551F Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401F
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SBT5551F
SBT5401F
OT-23F
KST-2097-000
SBT5551F
Transistor
KST-2097-000
transistor 2097
SBT5401F
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SBT5401
Abstract: 2sbt5401 SBT5551
Text: SBT5401 PNP Silicon Transistor Description PIN Connection • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551
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Original
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SBT5401
-160V,
-160V
SBT5551
OT-23
KSD-T5C079-000
SBT5401
2sbt5401
SBT5551
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PDF
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sbt5401
Abstract: No abstract text available
Text: SBT5401 Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551
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SBT5401
-160V,
-160V
SBT5551
SBT5401
OT-23
KST-2013-001
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PDF
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Untitled
Abstract: No abstract text available
Text: Silicon-Based Technology Corp. SBT54T Series Small-Signal Schottky Barrier Diodes SBT54T series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,
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SBT54T
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Untitled
Abstract: No abstract text available
Text: Silicon-Based Technology Corp. SBT54WS Series Small-Signal Schottky Barrier Diodes SBT54WS series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,
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SBT54WS
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SBT5551F
Abstract: SBT5401F SBT5401
Text: SBT5551F NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier • High voltage application 3 Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401F
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SBT5551F
SBT5401F
OT-23F
KSD-T5C076-000
SBT5551F
SBT5401F
SBT5401
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Untitled
Abstract: No abstract text available
Text: Silicon-Based Technology Corp. SBT54W Series Small-Signal Schottky Barrier Diodes SBT54W series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,
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SBT54W
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Untitled
Abstract: No abstract text available
Text: Silicon-Based Technology Corp. SBT54D Series Small-Signal Schottky Barrier Diodes SBT54D series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,
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SBT54D
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Untitled
Abstract: No abstract text available
Text: Silicon-Based Technology Corp. SBT54 Series Small-Signal Schottky Barrier Diodes SBT54 series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,
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SBT54
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Untitled
Abstract: No abstract text available
Text: SBT5401 PNP Silicon Transistor Description PIN Connection • General purpose am plifier • High volt age applicat ion Features • High collect or breakdown volt age : VCBO = - 160V, VCEO = - 160V • Low collect or sat urat ion volt age : VCE sat = - 0.5V( MAX.)
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SBT5401
SBT5551
OT-23
KSD-T5C079-000
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PDF
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SBT5401F
Abstract: Transistor SBT5551F
Text: SBT5401F Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F
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SBT5401F
-160V,
-160V
SBT5551F
OT-23F
KST-2096-001
SBT5401F
Transistor
SBT5551F
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PDF
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Untitled
Abstract: No abstract text available
Text: Silicon-Based Technology Corp. SBT54T Series Small-Signal Schottky Barrier Diodes SBT54T series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,
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SBT54T
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Untitled
Abstract: No abstract text available
Text: SBT5401F PNP Silicon Transistor Description PIN Connection • General purpose am plifier • High volt age applicat ion 3 Features • High collect or breakdown volt age : VCBO = - 160V, VCEO = - 160V • Low collect or sat urat ion volt age : VCE sat = - 0.5V( MAX.)
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SBT5401F
SBT5551F
KSD-T5C091-000
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SBT5401F
Abstract: SBT5551F
Text: SBT5401F Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F
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SBT5401F
-160V,
-150V
SBT5551F
OT-23F
KST-2096-000
-50mA,
-10mA,
SBT5401F
SBT5551F
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PDF
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3K MARKING CODE
Abstract: No abstract text available
Text: Silicon-Based Technology Corp. SBT54 Series Small-Signal Schottky Barrier Diodes SBT54 series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,
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SBT54
3K MARKING CODE
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PDF
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Untitled
Abstract: No abstract text available
Text: Silicon-Based Technology Corp. SBT54WS Series Small-Signal Schottky Barrier Diodes SBT54WS series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,
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SBT54WS
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SOT 363 marking CODE 1f
Abstract: sot-363 material SBT54D marking A2 sot363 sot-363 Marking 260 A2 SOT363
Text: Silicon-Based Technology Corp. SBT54D Series Small-Signal Schottky Barrier Diodes SBT54D series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,
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SBT54D
SOT 363 marking CODE 1f
sot-363 material
marking A2 sot363
sot-363 Marking 260
A2 SOT363
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PDF
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SBT5401F
Abstract: SBT5551F SBT5401
Text: SBT5401F PNP Silicon Transistor Description PIN Connection • General purpose amplifier • High voltage application 3 Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F
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Original
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SBT5401F
-160V,
-160V
SBT5551F
OT-23F
KSD-T5C091-000
SBT5401F
SBT5551F
SBT5401
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PDF
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SBT5401
Abstract: SBT5551 Transistor marking 0.5
Text: SBT5551 NPN Silicon Transistor PIN Connection Descriptions • General purpose amplifier • High voltage application 2 • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401
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Original
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SBT5551
SBT5401
OT-23
KSD-T5C066-000
SBT5401
SBT5551
Transistor marking 0.5
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PDF
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Untitled
Abstract: No abstract text available
Text: Silicon-Based Technology Corp. SBT54W Series Small-Signal Schottky Barrier Diodes SBT54W series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies SBT developed by Silicon-Based Technology Corporation,
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SBT54W
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SBT160W
Abstract: SBT-160W SBT140W SBT1645CT SBT1640CT sbt3030 sbt1640
Text: Surface-Mount Type Schottky Barrier Rectifiers Part Type Peak Repetitive Max. Average Peak Forward Forward Voltage Max. Reverse Reverse Voltage Rectified Current Surge Current Drop Current Pin-out VF IR Config. ✁✂ I VRRM V IFSM o °C A I F V R A
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RectifiersSOT-23
SBT40E20LS
SBT411D*
SBT400D*
SBT20H70CT
SBT20H80CT
SBT20H90CT
SBT20H100CT
SBT3030CT
SBT3040CT
SBT160W
SBT-160W
SBT140W
SBT1645CT
SBT1640CT
sbt3030
sbt1640
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PDF
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Untitled
Abstract: No abstract text available
Text: SBT5551 NPN Silicon Transistor PIN Connection Descriptions • General purpose am plifier • High volt age applicat ion 2 • high collect or breakdown volt age : VCBO = 180V, VCEO = 160V • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.)
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SBT5551
SBT5401
OT-23
KSD-T5C066-000
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PDF
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S78DM12Q
Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power
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SN431)
SUN0550F/D
O-220AB-3L
O-220F-3L
O-220F-4SL
DIP-14
DIP-20
DIP-18
S78DM12Q
Sf20d400
s78dM12
BA5810
sn7905
SF5A400
transistor AE code PNP smd
sf20a300
SF10A300
SF10D300
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