SBT5401 Search Results

SBT5401 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SBT5401		AUK	PNP Silicon Transistor		Original	PDF
SBT5401F		AUK	PNP Silicon Transistor		Original	PDF

SBT5401 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SBT5401 Abstract: SBT5551 Contextual Info: SBT5551 Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401	Original	SBT5551 SBT5401 OT-23 KST-2012-000 SBT5401 SBT5551	PDF
SBT5551F Abstract: Transistor KST-2097-000 transistor 2097 SBT5401F Contextual Info: SBT5551F Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401F	Original	SBT5551F SBT5401F OT-23F KST-2097-000 SBT5551F Transistor KST-2097-000 transistor 2097 SBT5401F	PDF
SBT5401 Abstract: 2sbt5401 SBT5551 Contextual Info: SBT5401 PNP Silicon Transistor Description PIN Connection • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551	Original	SBT5401 -160V, -160V SBT5551 OT-23 KSD-T5C079-000 SBT5401 2sbt5401 SBT5551	PDF
sbt5401 Contextual Info: SBT5401 Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551	Original	SBT5401 -160V, -160V SBT5551 SBT5401 OT-23 KST-2013-001	PDF
SBT5551F Abstract: SBT5401F SBT5401 Contextual Info: SBT5551F NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier • High voltage application 3 Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401F	Original	SBT5551F SBT5401F OT-23F KSD-T5C076-000 SBT5551F SBT5401F SBT5401	PDF
Contextual Info: SBT5401 PNP Silicon Transistor Description PIN Connection • General purpose am plifier • High volt age applicat ion Features • High collect or breakdown volt age : VCBO = - 160V, VCEO = - 160V • Low collect or sat urat ion volt age : VCE sat = - 0.5V( MAX.)	Original	SBT5401 SBT5551 OT-23 KSD-T5C079-000	PDF
SBT5401F Abstract: Transistor SBT5551F Contextual Info: SBT5401F Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F	Original	SBT5401F -160V, -160V SBT5551F OT-23F KST-2096-001 SBT5401F Transistor SBT5551F	PDF
Contextual Info: SBT5401F PNP Silicon Transistor Description PIN Connection • General purpose am plifier • High volt age applicat ion 3 Features • High collect or breakdown volt age : VCBO = - 160V, VCEO = - 160V • Low collect or sat urat ion volt age : VCE sat = - 0.5V( MAX.)	Original	SBT5401F SBT5551F KSD-T5C091-000	PDF
SBT5401 Abstract: SBT5551 Contextual Info: SBT5401 Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551	Original	SBT5401 -160V, -150V SBT5551 OT-23 KST-2013-000 -50mA, -10mA, SBT5401 SBT5551	PDF
SBT5401F Abstract: SBT5551F Contextual Info: SBT5401F Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F	Original	SBT5401F -160V, -150V SBT5551F OT-23F KST-2096-000 -50mA, -10mA, SBT5401F SBT5551F	PDF
SBT5401F Abstract: SBT5551F SBT5401 Contextual Info: SBT5401F PNP Silicon Transistor Description PIN Connection • General purpose amplifier • High voltage application 3 Features • High collector breakdown voltage : VCBO = -160V, VCEO = -160V • Low collector saturation voltage : VCE sat =-0.5V(MAX.) • Complementary pair with SBT5551F	Original	SBT5401F -160V, -160V SBT5551F OT-23F KSD-T5C091-000 SBT5401F SBT5551F SBT5401	PDF
SBT5401 Abstract: SBT5551 Transistor marking 0.5 Contextual Info: SBT5551 NPN Silicon Transistor PIN Connection Descriptions • General purpose amplifier • High voltage application 2 • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401	Original	SBT5551 SBT5401 OT-23 KSD-T5C066-000 SBT5401 SBT5551 Transistor marking 0.5	PDF
Contextual Info: SBT5551 NPN Silicon Transistor PIN Connection Descriptions • General purpose am plifier • High volt age applicat ion 2 • high collect or breakdown volt age : VCBO = 180V, VCEO = 160V • Low collect or sat urat ion volt age : VCE sat = 0.5V( MAX.)	Original	SBT5551 SBT5401 OT-23 KSD-T5C066-000	PDF
S78DM12Q Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300 Contextual Info: 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power	Original	SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300	PDF