3N169
Abstract: 2N7106 2n7109 2N7104 2N7105 2N7107 2N7108 3N170 3N171 SDF8200
Text: Type Number 3N169 3N170 3N171 2N7104 2N7105 2N7106 2N7107 2N7108 2N7109 SDF8200 SDF8201 SDF8202 SDF8203 SDF9210 SDF9211 SDF9212 SDF9213 SDF9214 SDF9215 V Vgs Vgs Br Igss (h) (h) Case Geometry dss Max Max Max Style Min (pA) (V) (V) (V) TOFMN1.1 25 10 0.5 1.5
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3N169
3N170
3N171
2N7104
2N7105
2N7106
2N7107
2N7108
2N7109
SDF8200
3N169
2N7106
2n7109
2N7104
2N7105
2N7107
2N7108
3N170
3N171
SDF8200
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Untitled
Abstract: No abstract text available
Text: ä ttm m N -C H A N N E L E N H A N C E M E N T D M O S F E T CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS _ . 020” _ 0.506mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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OCR Scan
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306mm)
0254mm)
50DF8202
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PDF
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IN5314
Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)
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OCR Scan
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UC4250*
UC42500
MIL-STD-883C,
19S00/
2N7109*
SDF8200
FMN35
SDF8201Â
FMNZ35
SDF8202
IN5314
IN5309
IN5286
2N5163
2NB906
IN5313
U1897E
2N3456
UC4250
in5297
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2NB906
Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Text: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style
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OCR Scan
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UC4250»
UC4250C»
MIL-STD-883C,
2N2609
2N3821
2N3822
2N3823
2N4856
2N4857
2N48S8
2NB906
IN5313
2NB90
IN5286
IN5296
solitrondevices
IN5302
in5287
IN5306
2N5902 TO-92
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PDF
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901101
Abstract: SDF8200 SDF8202 SDF9210 SDF9212 SDF9214
Text: ipßi ®iyj Tr ©ATim,® C o n N -C H A N N E L E N H A N C E M E N T D M O S FE T tr a n Devices. Inc CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 À Gold ASSEMBLY RECOMMENDATIONS . 020" (0.508mm It is advisable that:
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OCR Scan
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508mm)
0254mm)
901101
SDF8200
SDF8202
SDF9210
SDF9212
SDF9214
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PDF
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TIS88A equivalent
Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.
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20x40
111x109
TIS88A equivalent
2N3456 equivalent
J411 fet
2n5952 equivalent
2n3820 equivalent
2N5248 equivalent
fet 2N4304
2n5245 equivalent
2N4304 equivalent
2N5454 equivalent
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PDF
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3N163
Abstract: 3N164 3N165 3N166 3N169 3N172 3N173 3N188 3N189 3N190
Text: » M © Ï F ©Ä¥Ä[L© LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Typ« Number Case Style (TO - 3N163 3N164 3N172 3N173 72 72 72 72 Igss Max (PA) Min Geometry V(Br)da* Min (V) FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 10 10 200 200 2.0 2.0
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3N163
3N164
3N172
3N173
2000u
1500u
4000u
3N165
3N166
3N169
3N188
3N189
3N190
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S08MM
Abstract: SDF8200 SDF8202 SDF9210 SDF9212 SDF9214 fet e22
Text: C ^ © U K ST T © ÄTTM ,@ ( N -C H A N N E L E N H A N C E M E N T D M O S FET in t r o n Devices. Inc. CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .020" (0.508mm It is advisable that:
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OCR Scan
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508mm)
0254mm)
S08MM
SDF8200
SDF8202
SDF9210
SDF9212
SDF9214
fet e22
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PDF
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2N4360
Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.
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OCR Scan
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MFE2001
MFE2C04
MFE2005
MFE2006
MFE2133
MPF102
MPF108
MPF109
MPF111
MPF112
2N4360
2N3459
J411 fet
Solitron 2N3821
U1898E
2N5906
TIS58
MEM511
2N3920
uc451
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FMN1
Abstract: No abstract text available
Text: M M © ¥ © M M .© LOW POW ER FIELD EFFECT TRANSISTORS m m nnn Cam Styla T O - Geometry V(Br)da Min (V) 3N163 3N164 3N172 3N173 72 72 72 72 FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 3N190 3N191 99 99 99 99 99 99 Mas Max (nA) Max (ohms) 5.0 5.0 5.0 5.0
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3N163
3N164
3N172
3N173
2000u
1500u
4000u
4000u
FMN1
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PDF
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Untitled
Abstract: No abstract text available
Text: ra [D y j T © Ä T j m ® ( N -C H A N N E L E N H A N C E M E N T D M O S FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .020" (0.508mm) Di* S in : It is advisable that:
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OCR Scan
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508mm)
0254mm)
sdf9210,
sdf9212,
sdf9214,
sdf8200,
sdf8202
0D04D7fl
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