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    3N170 Price and Stock

    Qorvo UF3N170400B7S

    JFET N-CH 1.7KV 6.8A D2PAK-7
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    DigiKey UF3N170400B7S Cut Tape 12,220 1
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    UF3N170400B7S Digi-Reel 12,220 1
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    UF3N170400B7S Reel 12,000 800
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    Avnet Americas UF3N170400B7S Box 12 Weeks 800
    • 1 $7.16
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    Mouser Electronics UF3N170400B7S 836
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    Newark UF3N170400B7S Cut Tape 200 1
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    Avnet Asia UF3N170400B7S 24 Weeks 800
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    Avnet Silica UF3N170400B7S 39 Weeks 800
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    STMicroelectronics STFW3N170

    MOSFET N-CH 1700V 2.6A ISOWATT
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    DigiKey STFW3N170 Tube 709 1
    • 1 $6.65
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    Avnet Americas STFW3N170 Tube 18 Weeks 300
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    Mouser Electronics STFW3N170 1,072
    • 1 $5.67
    • 10 $4.82
    • 100 $2.93
    • 1000 $2.68
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    Newark STFW3N170 Bulk 533 1
    • 1 $5.74
    • 10 $4.82
    • 100 $3.9
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    STMicroelectronics STFW3N170 1,072 1
    • 1 $5.56
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    Avnet Silica STFW3N170 17 Weeks 30
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    EBV Elektronik STFW3N170 11,490 19 Weeks 30
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    Win Source Electronics STFW3N170 8,100
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    STMicroelectronics STW3N170

    MOSFET N-CH 1700V 2.6A TO247-3
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    DigiKey STW3N170 Tube 550 1
    • 1 $6.58
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    • 1000 $2.68386
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    Avnet Americas STW3N170 Tube 16 Weeks 600
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    Mouser Electronics STW3N170 479
    • 1 $5.6
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    • 100 $2.89
    • 1000 $2.64
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    Newark STW3N170 Bulk 289 1
    • 1 $6.19
    • 10 $5.29
    • 100 $4.38
    • 1000 $3.96
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    STMicroelectronics STW3N170 480 1
    • 1 $5.49
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    • 100 $2.83
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    TME STW3N170 1
    • 1 $5.34
    • 10 $4.37
    • 100 $3.93
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    Avnet Silica STW3N170 2,160 17 Weeks 30
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    EBV Elektronik STW3N170 270 17 Weeks 30
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    Win Source Electronics STW3N170 13,200
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    JRH Electronics 440HJ073N1705

    CONNECTOR BACKSHELL
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    DigiKey 440HJ073N1705 Bulk 1
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    JRH Electronics 311HJ013N1707

    CONN ADAPTER
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    DigiKey 311HJ013N1707 Bulk 1
    • 1 $1263.58
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    Find more 3N170 price and stock on Findchips.com

    3N170 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N170 Calogic N-Channel Enhancement Mode MOSFET Switch Original PDF
    3N170 Linear Integrated Systems N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    3N170 Linear Technology N-channel Mosfet Enhancement Mode Original PDF
    3N170 Calogic N-ChannelEnhancelnent Mode MOSFET Switch Scan PDF
    3N170 General Instrument Short Form Data 1976 Short Form PDF
    3N170 Intersil N-channel enchancement mode MOSFET switch. Scan PDF
    3N170 Intersil Shortform Data Book 1983/4 Short Form PDF
    3N170 Intersil Data Book 1981 Scan PDF
    3N170 Motorola European Master Selection Guide 1986 Scan PDF
    3N170 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    3N170 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    3N170 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N170 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N170 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N170-1 Linear Integrated Systems N-CHANNEL MOSFET ENHANCEMENT MODE Original PDF
    3N170-71 Calogic N-Channel Enhancement Mode MOSFET Switch Original PDF
    3N170/D Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N170/W Unknown Shortform Datasheet & Cross References Data Short Form PDF

    3N170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N170

    Abstract: No abstract text available
    Text: 3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		PDF 3N170 3N170

    3N170

    Abstract: 3N170-71 3N171 X3N170-71
    Text: N-Channel Enhancement Mode MOSFET Switch LLC 3N170 / 3N171 FEATURES • Low Switching Voltages • Fast Switching Times Drain-Source Resistance • Low • Low Reverse Transfer Capacitance PIN CONFIGURATION HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input


    Original     		PDF 3N170 3N171 DS019 3N170-71 3N171 X3N170-71

    3N169

    Abstract: 2N7106 2n7109 2N7104 2N7105 2N7107 2N7108 3N170 3N171 SDF8200
    Text: Type Number 3N169 3N170 3N171 2N7104 2N7105 2N7106 2N7107 2N7108 2N7109 SDF8200 SDF8201 SDF8202 SDF8203 SDF9210 SDF9211 SDF9212 SDF9213 SDF9214 SDF9215 V Vgs Vgs Br Igss (h) (h) Case Geometry dss Max Max Max Style Min (pA) (V) (V) (V) TOFMN1.1 25 10 0.5 1.5


    Original     		PDF 3N169 3N170 3N171 2N7104 2N7105 2N7106 2N7107 2N7108 2N7109 SDF8200 3N169 2N7106 2n7109 2N7104 2N7105 2N7107 2N7108 3N170 3N171 SDF8200

    intersil jfet

    Abstract: intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice
    Text: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)


    Original     		PDF 3N170 3N171 3N170 3N171 300mW intersil jfet intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice

    1322

    Abstract: No abstract text available
    Text: 3N170 25 V - N-Channel Enhancement Mode MOSFET Switch 13.22 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N170 Online Store 3N170 Diodes 25 V - N-Channel Enhancement Mode MOSFET Sw itch Transistors Integrated Circuits Optoelectronics


    Original     		PDF 3N170 3N170 com/3n170 1322

    3N165

    Abstract: 3N170 3N171
    Text: 3N170, 3N171 N-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE LOW SWITCHING VOLTAGES LOW DRAIN-SOURCE RESISTANCE LOW REVERSE TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted)


    Original     		PDF 3N170, 3N171 300ms. 3N165 3N170 3N171

    3N170-1

    Abstract: 3N170 3N170-71 3N171 X3N170-71
    Text: N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170 / 3N171 FEATURES • Low Switching Voltages • Fast Switching Times Drain-Source Resistance • Low • Low Reverse Transfer Capacitance PIN CONFIGURATION HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input


    Original     		PDF 3N170 3N171 3N170-1 3N170-71 3N171 X3N170-71

    amelco

    Abstract: UNION CARBIDE
    Text: 3N170, 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200 FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS 3N170, 171 1 3N170, 171 SOT-143 TOP VIEW @ 25 °C (unless otherwise stated)


    Original     		PDF 3N170, 3N171 3N170 OT-143 300mW 25-year-old, amelco UNION CARBIDE

    3n170 intersil

    Abstract: amelco
    Text: 3N170, 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS 3N170, 171 1 3N170, 171 SOT-143 TOP VIEW @ 25 °C (unless otherwise stated)


    Original     		PDF 3N170, 3N171 3N170 OT-143 300mW 25-year-old, 3n170 intersil amelco

    3N171

    Abstract: 3N170 3N170-1
    Text: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)


    Original     		PDF 3N170 3N171 3N170 300mW 3N171 3N170-1

    S0211

    Abstract: VN03000 2SK738 nec 500t 2sk738 mosfet S0215 3N175 MPF6659 motorola *6659 2SK73
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) CI. Max tr Max t, Max TOper Max (V) (F) (8) (8) eC) 8.0n 8.0n 13n 8.0n 13n 125 J 125 J 125 J 125 J 125 J 150 150 150 150 150 TO•72 TO·72


    Original     		PDF 2N7109 S0215 ZVN3302B TN0102N3 TN0602N3 TN0102N2 TN0602N2 SOF8104 S0211 VN03000 2SK738 nec 500t 2sk738 mosfet 3N175 MPF6659 motorola *6659 2SK73

    Untitled

    Abstract: No abstract text available
    Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s


    Original     		PDF 3N170

    J201 Replacement

    Abstract: 2N5019 "direct replacement"
    Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation


    Original     		PDF IT124 IT124 250mW 500mW J201 Replacement 2N5019 "direct replacement"

    3n169

    Abstract: No abstract text available
    Text: TYPES 3N169, 3N170. 3N171 N-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD EFFECT TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 8 3 . M A R C H 1 9 7 3 EN H A N C E M E N T-T Y P E t MOS SILIC O N TRAN SISTO RS For Applications Requiring Very High Input Impedance, Such as


    OCR Scan     		PDF 3N169, 3N170. 3N171 3n169

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device


    OCR Scan     		PDF 3N170/3N171 00CH42

    3N170

    Abstract: Hall 01E 3N171
    Text: G Dl E SOLI» STATE DE I 307SDÛ1 D D l l G n 3875081 G E SOLID STATE 01E 11019 D 3 N1 7 0 , 3 N171 3N170, 3N171 N-Channel Enhancement Mode MOSFET Switch FEATURES HANDLING PRECAUTIONS • Low • Fast • Low • Low MOS field-effect transistors have extremely high input re­


    OCR Scan     		PDF 3fi750fll 3N170, 3N171 3N170 3N170 Hall 01E 3N171

    3N171

    Abstract: VN10MA C 828
    Text: _ _ C U lO O IC V N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device


    OCR Scan     		PDF 3N170/3N171 3N171 VN10MA C 828

    3N170

    Abstract: 3N170-71 3N171 X3N170-71
    Text: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATU RES H AND LING P R E C A U TIO N S • • • • M O S field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible dam age to the device


    OCR Scan     		PDF 3N170/3N171 1B44322 3N170 3N170-71 3N171 X3N170-71

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: OPTEK TECHNOLOGY INC 4fiE D ¡C “ " • bTTflSûO Q00144S Tl? ■ Preliminary OTK 0 OPTEK Surface Mount Switching MOSFET Transistor Type HCT810 .075(1.90 .061(1.55) .225(5.71) .215(5.46) .155(3.93) .145(3.68) ■z PIN 1 INDENTIFIER DRAIN .028(0.71, .


    OCR Scan     		PDF Q00144S HCT810 3N170 MIL-S-19500

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    3N163

    Abstract: 3N164 3N170
    Text: G E SOLI» STATE DE|3fl7S0fil D Gli DIS 1 | DI 3875081 G E SOLID STATE 01E 11015 3N163, 3N164 3N163, 3N164 P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch FEATURES • • • • T - 3 7 - 3 5 ABSOLUTE MAXIMUMRATINGS Notei (Ta = 25°C unless otherwise noted)


    OCR Scan     		PDF 3N163, 3N164 T-37-35 3N163 -10mA 3N163 3N164 3N170

    2N4351 MOTOROLA

    Abstract: 3N170 3c169 DFM12 3N169
    Text: MOTOROLA SC { D I O D E S / O P T O } 34 636 72 55 M O T O RO LA SC DIODES/OPTO DE|b3b755S CID3ÛD41 3^ c 38041 FIËLD-EFFECT TRANSISTORS DICE (continued) D T - JJT- Z - i 3C169 DIE NO. LINE SOURCE — DFM122 This die provides performance equal to or better than that of


    OCR Scan     		PDF b3b755S DFM122 2N4351 3N169 3N170 3N171 MMCS0122 3C169 2N4351 MOTOROLA 3c169 DFM12