Untitled
Abstract: No abstract text available
Text: LS5905 LS5906 LS5907 LS5908 LS5909 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW DRIFT IΔVGS1-2/ΔT│=5µV/°C max. ULTRA LOW LEAKAGE IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS Case & Body 1 @ 25°C unless otherwise noted
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LS5905
LS5906
LS5907
LS5908
LS5909
150fA
500mW
25-year-old,
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Untitled
Abstract: No abstract text available
Text: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current 10mA Maximum Temperatures Storage Temperature Range
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IT120A
IT120
IT121
IT122
250mW
500mW
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Untitled
Abstract: No abstract text available
Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71
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LS843
LS844
LS845
OT-23
400mW
25-year-old,
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TELEDYNE PHILBRICK
Abstract: Teledyne Semiconductor amelco TELEDYNE PHILBRICK V to F VOLTAGE TO FREQUENCY CONVERTER TELEDYNE TELEDYNE PHILBRICK converter philbrick TELEDYNE PHILBRICK f to v teledyne converters TelCom Semiconductor
Text: , Company Profile 1300 Terra Bella Avenue Mountain View, CA 94043-1836 TelCom Semiconductor, Inc. Company Profile THE COMPANY TelCom Semiconductor, Inc. designs and manufactures analog and mixed signal integrated circuits in five principal product families: thermal management,
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D-82152
TELEDYNE PHILBRICK
Teledyne Semiconductor
amelco
TELEDYNE PHILBRICK V to F
VOLTAGE TO FREQUENCY CONVERTER TELEDYNE
TELEDYNE PHILBRICK converter
philbrick
TELEDYNE PHILBRICK f to v
teledyne converters
TelCom Semiconductor
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Untitled
Abstract: No abstract text available
Text: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 rDS on ≤ 30Ω LOW ON RESISTANCE tON ≤ 15ns FAST SWITCHING ABSOLUTE MAXIMUM RATINGS 2N SERIES 1 PN SERIES SST SERIES SOT-23 TOP VIEW @ 25 °C (unless otherwise stated)
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2N/PN/SST4391
2N/PN/SST4391,
OT-23
1800mW
350mW
25-year-old,
LS/PN/SST4391
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id100
Abstract: No abstract text available
Text: ID100 ID101 MONOLITHIC DUAL PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ≥ 30V ID100 ID101 Crss = 0.75pF TO-78 TOP VIEW TO-71 TOP VIEW REVERSE CAPACITANCE ABSOLUTE MAXIMUM RATINGS
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ID100
ID101
ID100
300mW
25-year-old,
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Untitled
Abstract: No abstract text available
Text: LS/3N165, LS/3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LS3N165, LS3N166 3N165, 3N166 LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA=25°C unless otherwise noted)
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LS/3N165,
LS/3N166
LS3N165,
LS3N166
3N165,
3N166
3N165
25-year-old,
3N165
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Untitled
Abstract: No abstract text available
Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF TO-78 TOP VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated
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3N190
3N191
3N190
300mW
525mW
25-year-old,
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ultra low igss pA
Abstract: No abstract text available
Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1
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LS830
LS831
LS832
LS833
70nV/â
25-year-old,
ultra low igss pA
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Untitled
Abstract: No abstract text available
Text: J/SST111 SERIES SINGLE N-CHANNEL JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns ABSOLUTE MAXIMUM RATINGS1 SST SERIES SOT-23 TOP VIEW SOT-23 J SERIES TO-92 TOP VIEW @ 25 °C unless otherwise stated
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J/SST111
OT-23
360mW
350mW
25-year-old,
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mosfet 2n4351
Abstract: No abstract text available
Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 20mA HIGH GAIN gfs = 1000µS ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated 1 Maximum Temperatures Storage Temperature -55 to +150 °C
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2N4351
350mW
25-year-old,
mosfet 2n4351
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UNION CARBIDE
Abstract: No abstract text available
Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
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LSK389
2SK389
400mW
25-year-old,
UNION CARBIDE
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UNION CARBIDE
Abstract: No abstract text available
Text: 2N5018 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE 75Ω LOW ON RESISTANCE TO-18 TOP VIEW RATINGS1 ABSOLUTE MAXIMUM @ 25 °C unless otherwise stated S Maximum Temperatures Storage Temperature -55 to 150°C
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2N5018
2N5018
500mW
-10mA
25-year-old,
UNION CARBIDE
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amelco
Abstract: No abstract text available
Text: J500 SERIES CURRENT REGULATING DIODES FEATURES REPLACES SILICONIX/VISHAY J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V ABSOLUTE MAXIMUM RATINGS A A K K 1 @ 25 °C unless otherwise stated Maximum Temperatures Storage Temperature
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350mW
25-year-old,
amelco
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amelco
Abstract: LSK389B
Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE Top View TO-71 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
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LSK389
2SK389
400mW
25-year-old,
amelco
LSK389B
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LSK186
Abstract: No abstract text available
Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits • Reduced Noise due to process improvement Monolithic Design High slew rate
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LSK489
25-year-old,
LSK186
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LS352
Abstract: No abstract text available
Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS FEATURES HIGH GAIN hFE 200 @ 10µA - 1mA TIGHT VBE MATCHING IVBE1-VBE2I=0.2mV TYP. HIGH fT 275 MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C unless otherwise stated IC Collector Current 10mA Maximum Temperatures
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LS350
LS351
LS352
250mW
500mW
OT-23
LS352:
LS352
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Untitled
Abstract: No abstract text available
Text: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM RATINGS U SERIES Gpg = 11.5dB NF = 2.7dB J SERIES TOP VIEW 1 @ 25 °C unless otherwise stated
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U/J/SST308
U/J/SST308
OT-23
350mW
500mW
25-year-old,
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Untitled
Abstract: No abstract text available
Text: LS840 LS841 LS842 LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES LOW NOISE en=8nV/Hz TYP. LOW LEAKAGE IG=10pA TYP. LOW DRIFT I VGS1-2/TI=5µV/ºC max. LOW OFFSET VOLTAGE IVGS1-2I=2mV TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C unless otherwise noted
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LS840
LS841
LS842
O-71/78
400mW
25-year-old,
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Untitled
Abstract: No abstract text available
Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE 2000 @ 1.0µA TYP. LOW OUTPUT CAPACITANCE COBO 2.0pF TIGHT VBE MATCHING IVBE1-VBE2I=0.2mV TYP. HIGH fT 100 MHz ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C unless otherwise stated
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LS301
LS302
LS303
250mW
500mW
LS301
LS302:
LS303:
25-year-old,
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amelco
Abstract: No abstract text available
Text: DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ABSOLUTE MAXIMUM RATINGS CR≤0.2pF DPAD DPAD1 TO-72 Top View TO-78 Top View Case & Substrate 1 @ 25°C unless otherwise stated
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500mW
25-year-old,
amelco
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amelco
Abstract: No abstract text available
Text: J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH FEATURES Replacement For SILICONIX J/SST174 SERIES rDS on ≤ 85 LOW ON RESISTANCE LOW GATE OPERATING CURRENT ABSOLUTE MAXIMUM RATINGS ID(off) = 10pA 1 @ 25 °C (unless otherwise stated) Maximum Temperatures SST SERIES
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J/SST174
OT-23
350mW
-50mA
25-year-old,
SST174
amelco
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Untitled
Abstract: No abstract text available
Text: DPAD SERIES MONOLITHIC DUAL PICO AMPERE DIODES FEATURES Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ABSOLUTE MAXIMUM RATINGS ΔCR≤0.2pF DPAD DPAD1 TO-72 Top View TO-78 Top View Case & Substrate 1 @ 25°C unless otherwise stated
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500mW
25-year-old,
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SN7449
Abstract: 54175 SN7401 74L42 SN7437 SN74S40
Text: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type s listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a
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SN15312
SN15325,
SN15370
SN7449
54175
SN7401
74L42
SN7437
SN74S40
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