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    8n10

    Abstract: SGSP311 8n08 SEFM8N08
    Text: S G S-THOHSON 0?E- D | -7=12^237 .D01flQfl*î 7 | 73C 1 7 5 8 6 D J T*3>^~U SEFM8N08 SEFM8N10 SEFP8N08 \ ’ N-CHANNEL POWER MOS TRANSISTORS SEFP8N,° HIGH SPEED SWITCHING APPLICATIONS v DSS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		D01flQfl* SEFM8N08 SEFM8N10 SEFP8N08 300jjs SGSP311 C-311 8n10 8n08 PDF