T0.8N100

Contextual Info: □ IXYS Advanced Technical Information 8N100 IXGP 8N100 IGBT V CES = = = ^C25 V CE sat 1000 V 16 A 2.7 V Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES VGEM Continuous ±20

8N100

Contextual Info: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V = 16 A IC25 VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25

8N100

Abstract: MJ 800
Contextual Info: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V = 16 A IC25 VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25

Contextual Info: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V IC25 = 16 A VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V

Contextual Info: iliiitl Advanced Technical Information I XGA 8N100 IGBT VCES IXGP 8N100 ^C25 V Symbol U 90 CE sat 1000 V 16 A 2.7 V TO-220AB (IXGP) Test Conditions 1000 1000 V Continuous +20 V T ransient ±30 V T. =25° C 16 A T c = 90° C 8 A 32 A Tj = 25° C to 150° C

8N100

Abstract: 8n10
Contextual Info: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V IC25 = 16 A 2.7 V VCE sat = Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25

8N100

Abstract: UPS SIEMENS
Contextual Info: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V = 16 A IC25 VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V

8B103

Abstract: 8Z0054 8U2011 8N3021 8H2021 8Z0143 8Z0113 8N2021 8A1021 8A2121
Contextual Info: Honeywell MICRO SWITCH Data Sheet F 172 Second Issue Series 8 Miniature Manual Switches Description Series 8 is a line o f m in ia tu re to g gle, rocker, paddle and p u sh b u t­ to n sw itch e s rated 6 A -1 2 5V a c resistive, 3 A -2 5 0V a c resistive or

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MPT50N06

Abstract: 33091 MC33091 MPT50 8N10 mosfet
Contextual Info: MOTOROLA MC33091 SEMICONDUCTOR TECHNICAL DATA Advance Information High Side TMOS Driver HIGH SIDE TMOS DRIVER The MC33091 is a high side TMOS driver designed for use in harsh automotive switching applications w hich require the capability of handling high voltages

tektronix type 576 curve tracer

Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
Contextual Info: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con­

Contextual Info: 8N10F7 N-channel 100 V, 0.0017 Ω typ., 8 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - preliminary data Features Order code VDS RDS on max ID PTOT 8N10F7 100 V 0.020 Ω 8A 3.5 W • Ultra low on-resistance

8B103

Abstract: 8N1021 8a1012 SPDT TOGGLE SWITCH 125VAC 6A 8H1041 8N3021 micro switch 8A1012 8W1021 8E2011 8A1021
Contextual Info: Honeywell MICRO SWITCH Data Sheet F 172 Second Issue Series 8 Miniature Manual Switches Description Subject to change without notice 0387 RO-HE / Printed in Belgium by Prefilm Series 8 is a line o f m in ia tu re toggle, rocker, paddle and pu sh bu t­ ton sw itches rated 6A -125V ac resistive, 3A -250V ac resistive or

120n60b

Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Contextual Info: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

TP8N10

Abstract: TP8N08 8n10 MTP8N08 8N10 mosfet MTP8N10 tp8n1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP8N08 8N10 P o w e r Field E ffe c t T ra n sisto r N -C h ann el E n h an cem en t-M od e S ilic o n G ate T M O S T M O S PO W ER FETs 8 AM PERES rDS on = 0.5 O H M 80 and 100 V O LTS T h e s e T M O S P o w e r F E T s a r e d e s i g n e d f o r m e d i u m v o lt a g e ,

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

RN1Z

Abstract: BN1243 KN1204 RN1002 RN1003 RN1004 RN1006 RN1007 8N2226 RN1011
Contextual Info: - 324 - * 1 3 = 2 5 ^ , *EP(äTc=25‘ C m. s tt m s ä v'cBO VcEO IC(DC) Pc (V) (V) (A) (W) Pc* (W) (uk) (max) V'CB ,'Btr (V) ' Ic (A) Ib (A) 0. 005 0.00025 50 50 5 0.01 0.3 0. 005 0. 00025 50 70 5 0.01 0.3 0. 005 0. 00025 0.1 50 80 5 0.01 0.3 0. 005 0.00025

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

12n60c

Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM

8n10

Abstract: SGSP311 8n08 SEFM8N08
Contextual Info: S G S-THOHSON 0?E- D | -7=12^237 .D01flQfl*î 7 | 73C 1 7 5 8 6 D J T*3>^~U SEFM8N08 8N10 SEFP8N08 \ ’ N-CHANNEL POWER MOS TRANSISTORS SEFP8N,° HIGH SPEED SWITCHING APPLICATIONS v DSS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

Contextual Info: 8N10 8A , 100V , RDS ON 48mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free SOP-8 DESCRIPTION The 8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide

8N3021

Abstract: switch 8n3021
Contextual Info: 8N RoHSttJfciS f í f t í R f y x ' f u/51 Standard Pushbutton Sw itches • i t s - ■Features- t t o * ' * > t t ¿ 8 , ¿ 1 0 .^ 1 s m m m ' t b V . & M i M i x