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    8N100 Search Results

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    8N100 Price and Stock

    Panasonic Electronic Components EXB-28N100JX

    RES ARRAY 4 RES 10 OHM 0804
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    DigiKey EXB-28N100JX Cut Tape 12,914 1
    • 1 $0.11
    • 10 $0.059
    • 100 $0.0335
    • 1000 $0.02001
    • 10000 $0.01442
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    EXB-28N100JX Digi-Reel 12,914 1
    • 1 $0.11
    • 10 $0.059
    • 100 $0.0335
    • 1000 $0.02001
    • 10000 $0.01442
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    EXB-28N100JX Reel 10,000 10,000
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    Master Electronics EXB-28N100JX
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    Walsin Technology Corporation MT18N100J500CT

    CAP CER 10PF 50V C0G/NP0 0603
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    DigiKey MT18N100J500CT Digi-Reel 11,385 1
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    MT18N100J500CT Cut Tape 11,385 1
    • 1 $0.1
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    MT18N100J500CT Reel 4,000 4,000
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    TDK Electronics B65808N1006D001

    BOBBIN COIL FORMER RM 6
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    DigiKey B65808N1006D001 Box 2,864 1
    • 1 $1.57
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    • 100 $0.7215
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    Newark B65808N1006D001 Bulk 1,151 1
    • 1 $1.47
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    TME B65808N1006D001 87 1
    • 1 $1.38
    • 10 $1.15
    • 100 $0.79
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    TDK Electronics B65808N1004D001

    BOBBIN COIL FORMER RM 6
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    DigiKey B65808N1004D001 Box 902 1
    • 1 $1.31
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    • 100 $0.7416
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    Newark B65808N1004D001 Bulk 946 1
    • 1 $1.36
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    TME B65808N1004D001 511 1
    • 1 $1.18
    • 10 $0.81
    • 100 $0.7
    • 1000 $0.64
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    TDK Electronics B65808N1004D002

    BOBBIN COIL FORMER RM 6
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    DigiKey B65808N1004D002 Box 886 1
    • 1 $1.58
    • 10 $1.093
    • 100 $0.7296
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    Newark B65808N1004D002 Cut Tape 1,000 1
    • 1 $1.51
    • 10 $1.14
    • 100 $0.759
    • 1000 $0.634
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    TME B65808N1004D002 500
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    8N100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8N100

    Abstract: No abstract text available
    Text: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V = 16 A IC25 VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25


    Original
    8N100 O-220AB O-263 8N100 PDF

    8N100

    Abstract: MJ 800
    Text: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V = 16 A IC25 VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


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    8N100 O-220AB O-263 8N100 MJ 800 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V IC25 = 16 A VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V


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    8N100 O-220AB O-263 728B1 123B1 728B1 065B1 PDF

    8N100

    Abstract: 8n10
    Text: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V IC25 = 16 A 2.7 V VCE sat = Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


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    8N100 8N100 O-220AB O-263 O-220 8n10 PDF

    8N100

    Abstract: UPS SIEMENS
    Text: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V = 16 A IC25 VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original
    8N100 O-220AB O-263 728B1 123B1 728B1 065B1 8N100 UPS SIEMENS PDF

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


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    PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original
    AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 PDF

    MDM 6600

    Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
    Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1


    Original
    9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


    Original
    O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60 PDF

    T0.8N100

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information 8N100 IXGP 8N100 IGBT V CES = = = ^C25 V CE sat 1000 V 16 A 2.7 V Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES VGEM Continuous ±20


    OCR Scan
    IXGA8N100 8N100 T0.8N100 PDF

    Untitled

    Abstract: No abstract text available
    Text: iliiitl Advanced Technical Information I XGA 8N100 IGBT VCES IXGP 8N100 ^C25 V Symbol U 90 CE sat 1000 V 16 A 2.7 V TO-220AB (IXGP) Test Conditions 1000 1000 V Continuous +20 V T ransient ±30 V T. =25° C 16 A T c = 90° C 8 A 32 A Tj = 25° C to 150° C


    OCR Scan
    8N100 O-220AB O-220AB O-263AA O-263 PDF

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan
    O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B PDF

    RN1Z

    Abstract: BN1243 KN1204 RN1002 RN1003 RN1004 RN1006 RN1007 8N2226 RN1011
    Text: - 324 - * 1 3 = 2 5 ^ , *EP(äTc=25‘ C m. s tt m s ä v'cBO VcEO IC(DC) Pc (V) (V) (A) (W) Pc* (W) (uk) (max) V'CB ,'Btr (V) ' Ic (A) Ib (A) 0. 005 0.00025 50 50 5 0.01 0.3 0. 005 0. 00025 50 70 5 0.01 0.3 0. 005 0. 00025 0.1 50 80 5 0.01 0.3 0. 005 0.00025


    OCR Scan
    RN1002 RN1003 RN1004 RN1006 RN1007 BN1223 10K/10K RN2224 RN1224 47K/10K RN1Z BN1243 KN1204 8N2226 RN1011 PDF