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    N60C Search Results

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    N60C Price and Stock

    Flip Electronics FQP6N60C

    N-CHANNEL 600 V 5.5A (TC) 125W (
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQP6N60C Tube 34,816 1,000
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    • 1000 $0.7
    • 10000 $0.7
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    Rochester Electronics LLC SPS04N60C3E8177AKMA1

    LOW POWER_LEGACY
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    DigiKey SPS04N60C3E8177AKMA1 Bulk 4,500 462
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    Rochester Electronics LLC SPP06N60C3XKSA1

    SPP06N60 - 600V COOLMOS N-CHANNE
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    DigiKey SPP06N60C3XKSA1 Bulk 3,964 247
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    onsemi FQD2N60CTM

    MOSFET N-CH 600V 1.9A DPAK
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    DigiKey FQD2N60CTM Reel 2,500 2,500
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    FQD2N60CTM Cut Tape 1,116 1
    • 1 $1.28
    • 10 $0.803
    • 100 $0.5309
    • 1000 $0.37609
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    Mouser Electronics FQD2N60CTM 2,485
    • 1 $0.87
    • 10 $0.765
    • 100 $0.529
    • 1000 $0.376
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    Richardson RFPD FQD2N60CTM 2,500
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    Avnet Asia FQD2N60CTM 16 Weeks 5,000
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    Avnet Silica FQD2N60CTM 17 Weeks 2,500
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    EBV Elektronik FQD2N60CTM 230,000 18 Weeks 2,500
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    onsemi FQD5N60CTM

    MOSFET N-CH 600V 2.8A DPAK
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    DigiKey FQD5N60CTM Cut Tape 2,425 1
    • 1 $1.76
    • 10 $1.116
    • 100 $0.7501
    • 1000 $0.54214
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    Avnet Americas FQD5N60CTM Reel 2,500
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    Mouser Electronics FQD5N60CTM 14,924
    • 1 $0.92
    • 10 $0.796
    • 100 $0.685
    • 1000 $0.52
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    ComSIT USA FQD5N60CTM 2,323
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    Richardson RFPD FQD5N60CTM 2,500
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    Avnet Asia FQD5N60CTM 16 Weeks 2,500
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    • 10000 $0.46513
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    Avnet Silica FQD5N60CTM 17 Weeks 2,500
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    EBV Elektronik FQD5N60CTM 28 Weeks 2,500
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    Find more N60C price and stock on Findchips.com

    N60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXSH30N60CD1

    Abstract: IXSK30N60CD1 IXST30N60CD1
    Text: High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE sat t fi 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V Maximum Ratings VCGR


    Original     		PDF N60CD1 O-247AD IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1

    n60c

    Abstract: IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1 TO-264 Jedec package outline N60CD1
    Text: ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 V CES I C25 V CE sat t fi Short Circuit SOA Capability = = = = 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF N60CD1 O-247AD 150OC n60c IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1 TO-264 Jedec package outline N60CD1

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE sat t fi 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V Maximum Ratings VCGR


    Original     		PDF N60CD1 N60CD1 O-247AD O-264 O-268 O-268AA

    N60C3

    Abstract: SPP03N60C3
    Text: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72FP 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\


    Original     		PDF P-TO220-3-31 SP000216296 N60C3 SPP03N60C3 SPA03N60C3 PG-TO220-3-1, PG-TO220-3-21 PG-TO220-3-31/3-111 N60C3 SPP03N60C3

    3G72-31

    Abstract: No abstract text available
    Text: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72-31 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\


    Original     		PDF RRO026 P-TO220-3-31 3G72-31 3G72-31 SP000216296

    Untitled

    Abstract: No abstract text available
    Text: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72FP 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\


    Original     		PDF RRO026 P-TO220-3-31 3G72FP SP000216296

    k1117

    Abstract: R36W power transistor k1821 L46R k1518 k1117 transistor k2225 transistor k2225 k1317 transistor k1317
    Text: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by: Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Schematic Information The kit contains representative input and output schematics, netlists, and waveform used for the ECLinPS


    Original     		PDF AND8009/D k1117 R36W power transistor k1821 L46R k1518 k1117 transistor k2225 transistor k2225 k1317 transistor k1317

    R36W

    Abstract: k1420 N52C N38C l46r k0114 N53C transistor k1117 k2225 transistor transistors k2628
    Text: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information


    Original     		PDF AND8009/D r14525 AND8009/D R36W k1420 N52C N38C l46r k0114 N53C transistor k1117 k2225 transistor transistors k2628

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    k2324

    Abstract: k1821 k2225 k1317 power transistor k1821 k1213 k1117 k0313 k2225 transistor N13R
    Text: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by: Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Schematic Information The kit contains representative input and output schematics, netlists, and waveform used for the ECLinPS


    Original     		PDF AND8009/D C0203 K0204 K0204WB L01WB L02WB L03WB k2324 k1821 k2225 k1317 power transistor k1821 k1213 k1117 k0313 k2225 transistor N13R

    Q67040-S4551

    Abstract: No abstract text available
    Text: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\


    Original     		PDF RRO026 P-TO220-3-31 Q67040-S4551 Q67040-S4551

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original     		PDF O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60

    N60C3

    Abstract: SP000216296 n60c P-TO-220-3-31
    Text: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72FP 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\


    Original     		PDF P-TO220-3-31 SP000216296 N60C3 SPP03N60C3 SPA03N60C3 PG-TO220-3-1, PG-TO220-3-21 PG-TO220-3-31/3-111 N60C3 SP000216296 n60c P-TO-220-3-31

    SP000216296

    Abstract: No abstract text available
    Text: 6331& 63$1& &RRO026Œ 3RZHU7UDQVLVWRU HDWXUH VDS#Tjmax  9 5'6 RQ  Ω ,'  $ • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG 3G72 3G72 • [WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW\


    Original     		PDF RRO026 P-TO220-3-31 SP000216296 SP000216296

    n60c

    Abstract: ci lm 317
    Text: 0IXYS ADVANCEDTECHNICALINFORMATION High Speed IGBT with Diode N60CD1 N60CD1 IXST30 N60CD1 CES ^C25 VCE sat t fi Short Circuit SOA Capability 600 V 55 A 2.5 V 70 ns TO-247AD (IXSH) Symbol Test Conditions Maximum Ratings 600 V vCGR 600 V VGES vGEM


    OCR Scan     		PDF IXSH30N60CD1 IXSK30N60CD1 IXST30 N60CD1 O-247AD Cto150 O-268 O-264 n60c ci lm 317

    n60c

    Abstract: NA60 NA60 resistor Rn65d resistor na65 10 resistor NE55 RN60D N55D Resistors NC55 dale rn60c
    Text: MODELS NE, NC, CT, NA Metal Film Resistors Military, MIL-R-10509, Qualified, Type RN, Precision FEATURES • Low noise and low inductance characteristics • Blue epoxy encapsulation over moisture resistant polyimide varnish undercoat • Special marking available


    OCR Scan     		PDF MIL-R-10509, 100PPM/ MIL-STD-1276. RN50FF 50PPM/-C) 500PP 100PPM n60c NA60 NA60 resistor Rn65d resistor na65 10 resistor NE55 RN60D N55D Resistors NC55 dale rn60c

    R87c196

    Abstract: No abstract text available
    Text: I N TE L CO RP 31E D UP/PRPHLS in te l • 40Sbl?S, 00=11535 4 ■ IPKUyiüfflOMÄKy T - 4 9 - l% jÇ > 87C196KB/83C196KB/80C196KB 16-BIT HIGH PERFORMANCE CHMOS MICROCONTROLLER 87C196KB — 8 Kbytes of On-Chip EPROM 83C196KB — 8 Kbytes of Factory Mask-Programmed ROM


    OCR Scan     		PDF 40Sbl 87C196KB/83C196KB/80C196KB 16-BIT 87C196KB 83C196KB 80C196KB Sources/16 R87c196

    IN34A

    Abstract: 1N60C IN82A IN67A in69a IN56A 1n62 diode IN34 diode 1N142 diode diode IN97
    Text: Iñ DE I b l E E m ? ? D D 0 D D 7 D 4 612 24 77 MICR OWA VE DIODE CORP 18C 0 0 0 7 0 D T - Of ón CROWAVE DIODE CORPORATION . GERMANIUM DIODES r . J r JN34 1N34 4AS A IN3 1 N 3 5 IN38 1N38A 1 N3 1N 4SB 8 1 1N N5 510 1 1N N5S2 2A 1 1N N5 54 4A 1N56 IN5 6 A


    OCR Scan     		PDF DEiblE2477 1N34A IN34AS 1N38A 1N52A 1N54A IN56A 1N5836A 1N127 1N127A IN34A 1N60C IN82A IN67A in69a 1n62 diode IN34 diode 1N142 diode diode IN97