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Vishay Siliconix SI4466DY-T1-E3 MOSFET N-CH 20V 9.5A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4466DY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4466DY-T1-E3	Digi-Reel			1	1 $1.56 10 $1.56 100 $1.56 1000 $1.56 10000 $1.56	Buy Now
	SI4466DY-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	SI4466DY-T1-E3		2,485		7	1 - 10 $0.825 100 $0.3094 1000 $0.231 10000 $0.2145	Buy Now
Quest Components	SI4466DY-T1-E3		1,988			1 $1.1 10 $1.1 100 $1.1 1000 $0.286 10000 $0.286	Buy Now
	SI4466DY-T1-E3		589			1 $0.66 10 $0.66 100 $0.44 1000 $0.308 10000 $0.308	Buy Now
ES Components	SI4466DY-T1-E3					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI4466DY-T1-GE3 MOSFET N-CH 20V 9.5A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4466DY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4466DY-T1-E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4466DY-T1-E3		13,692			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SI4466DY-T1-E3		2,032			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4466DY-T1-E3		10,839			1 $2.5 10 $2.5 100 $2.5 1000 $0.875 10000 $0.75	Buy Now
	SI4466DY-T1-E3		2,247			1 $1.25 10 $1.25 100 $1.25 1000 $0.5 10000 $0.4375	Buy Now
	SI4466DY-T1-E3		1,625			1 $1.1 10 $1.1 100 $0.55 1000 $0.44 10000 $0.44	Buy Now
Vishay Siliconix SI4466DY-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4466DY-T1		4,510		7	1 - 10 $0.825 100 $0.3094 1000 $0.231 10000 $0.2145	Buy Now
	SI4466DY-T1		6			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4466DY-T1		3,608			1 $1.1 10 $1.1 100 $1.1 1000 $0.286 10000 $0.275	Buy Now
	SI4466DY-T1		1,993			1 $1.05 10 $1.05 100 $1.05 1000 $0.4375 10000 $0.385	Buy Now
Velocity Electronics	SI4466DY-T1		2,338			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ES Components	SI4466DY-T1		500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI4466DYT1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4466DYT1		2,767			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI4466DY Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4466DY	Fairchild Semiconductor	Single N-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
Si4466DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
Si4466DY	Vishay	N-Channel 2.5-V (D-S) MOSFET	Original	PDF
SI4466DY_NL	Fairchild Semiconductor	Single N-Channel 2.5V Specified PowerTrench MOSFET	Original	PDF
Si4466DY SPICE Device Model	Vishay	N-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI4466DY-T1	Vishay Intertechnology	N-Channel 2.5-V (G-S) Rated MOSFET	Original	PDF
SI4466DY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 9.5A 8-SOIC	Original	PDF
SI4466DY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 9.5A 8-SOIC	Original	PDF

SI4466DY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si4466DY Abstract: No abstract text available Text: Si4466DY Vishay Siliconix N-Channel 2.5-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4466DY S-54695--Rev. 15-Sep-97	PDF
SI4466DY Abstract: No abstract text available Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V 13.5 0.013 @ VGS = 2.5 V 11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4466DY Si4466DY-T1 (with Tape and Reel)	Original	Si4466DY Si4466DY-T1 S-31062--Rev. 26-May-03	PDF
Si4466DY Abstract: No abstract text available Text: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4466DY 17-Apr-01	PDF
Untitled Abstract: No abstract text available Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC	Original	Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si4466DY Abstract: 70910 Text: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4466DY S-60074Rev. 23-Jan-06 70910	PDF
Si4466DY Abstract: No abstract text available Text: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4466DY 18-Jul-08	PDF
Si4466DY Abstract: No abstract text available Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4466DY 18-Jul-08	PDF
SI4466DY Abstract: No abstract text available Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4466DY 08-Apr-05	PDF
SI4466DY-T1-E3 Abstract: Si4466DY-T1 Si4466DY Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT D SO-8 S 1 8 D S 2 7 D S 3 6 D	Original	Si4466DY Si4466DY-T1 Si4466DY-T1-E3 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC	Original	Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SI4466DY Abstract: A302V Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT D SO-8 S 1 8 D S 2 7 D S 3 6 D	Original	Si4466DY Si4466DY-T1 Si4466DY-T1-E3 18-Jul-08 A302V	PDF
Untitled Abstract: No abstract text available Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC	Original	Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 11-Mar-11	PDF
AN609 Abstract: Si4466DY Text: Si4466DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4466DY AN609 01-Sep-05	PDF
SI4466DY Abstract: No abstract text available Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V 13.5 0.013 @ VGS = 2.5 V 11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4466DY Si4466DY-T1 (with Tape and Reel)	Original	Si4466DY Si4466DY-T1 08-Apr-05	PDF

Si4466DY-T1-E3 Abstract: Si4466DY 135-A70 Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC	Original	Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 11-Mar-11 135-A70	PDF
SI4466DY Abstract: No abstract text available Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4466DY S-00652--Rev. 27-Mar-00	PDF
Si4466DY Abstract: No abstract text available Text: Si4466DY N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4466DY S-54695--Rev. 15-Sep-97	PDF
Si4466DY Abstract: Siliconix The subcircuit model was extracted and optimized Text: SPICE Device Model Si4466DY N-Channel 2.5-V G-S Rated MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	Si4466DY Siliconix The subcircuit model was extracted and optimized	PDF
Si4466DY Abstract: Si4466DY-T1-E3 135-A70 Text: Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC	Original	Si4466DY 2002/95/EC Si4466DY-T1-E3 Si4466DY-T1-GE3 18-Jul-08 135-A70	PDF
4466 8 pin mosfet pin voltage Abstract: MOSFET 4466 Text: Si4466DY Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior	Original	Si4466DY FDS6570A 4466 8 pin mosfet pin voltage MOSFET 4466	PDF
Si4466DY Abstract: No abstract text available Text: Si4466DY N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V "11 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4466DY S-54695--Rev. 15-Sep-97	PDF
MOSFET 4466 Abstract: FDS6570A Si4466DY 4466 SO-8 Text: Si4466DY Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior	Original	Si4466DY MOSFET 4466 FDS6570A 4466 SO-8	PDF
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587	PDF
ixfh26n60q Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY	OCR Scan	SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671	PDF

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SI4466DY Price and Stock

Vishay Siliconix SI4466DY-T1-E3

Vishay Siliconix SI4466DY-T1-GE3

Vishay Intertechnologies SI4466DY-T1-E3

Vishay Siliconix SI4466DY-T1

Vishay Siliconix SI4466DYT1

SI4466DY Datasheets (8)

SI4466DY Datasheets Context Search

Si4466DY

SI4466DY

Si4466DY

Untitled

Si4466DY

Si4466DY

Si4466DY

SI4466DY

SI4466DY-T1-E3

Untitled

SI4466DY

Untitled

AN609

SI4466DY

Si4466DY-T1-E3

SI4466DY

Si4466DY

Si4466DY

Si4466DY

4466 8 pin mosfet pin voltage

Si4466DY

MOSFET 4466

BC548 TRANSISTOR REPLACEMENT

ixfh26n60q